Phase-change random access memory device and method of manufacturing the same
View Patent ↗A phase change random access memory device includes a bottom electrode contact formed within a bottom electrode contact hole, a phase-change material pattern formed to surround a side of an upper portion of the bottom electrode contact, and an insulating layer buried within the phase-change material pattern and formed on an upper surface of the bottom electrode contact.
1. A phase-change random access memory (PCRAM) device, comprising:
an insulating layer formed surrounding an outer surface of a bottom electrode contact hole;
a bottom electrode contact formed within the bottom electrode contact hole and having a projecting portion projected higher than an upper surface of the insulating layer;
a phase-change material pattern formed surrounding the whole outer surface of the projecting portion of the bottom electrode contact; and
an insulating layer buried within the phase-change material pattern and formed over the upper surface of the bottom electrode contact.
2. The PCRAM device of claim 1 , wherein the phase-change material pattern is formed in a ring type.
3. The PCRAM device of claim 2 , further comprising an interlayer insulating layer formed surrounding an outer circumference of the phase-change material pattern.
4. The PCRAM device of claim 1 , wherein the bottom electrode contact hole has a hollow cylindrical shape and the bottom electrode contact includes a conductive layer formed over a bottom and a sidewall of the bottom electrode contact hole.
5. The PCRAM device of claim 1 , wherein the bottom electrode contact hole has a hollow cylindrical shape and the bottom electrode contact includes a conductive layer formed over a part of a sidewall of the bottom electrode contact hole.
6. The PCRAM device of claim 1 , wherein the bottom electrode contact hole has a hollow tetragonal pillar shape and the bottom electrode contact includes a conductive layer formed over one sidewall of the bottom electrode contact hole.