Compositions comprising base-reactive component and processes for photolithography
View Patent ↗New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist.
1. A method for processing a photoresist composition, comprising:
(a) applying on a substrate a photoresist composition comprising:
(i) one or more resins,
(ii) a photoactive component, and
(iii) one or more materials that comprise base-reactive groups, the one or more materials distinct from the one or more resins; and
(b) dry exposing the applied photoresist layer to radiation activating for the photoresist composition;
wherein said (iii) one or more materials comprise a resin that comprises a repeat unit provided by at least one monomer represent by the following Formula (I), (II) or (III):
where in Formula (I) M is a polymerizable functional group, R is an alkyl spacer group with or without carboxyl linkages, Rf is a fluoro or perfluoro alkyl group with at least the alpha carbon being fluorinated;
wherein in Formula (II) M is a polymerizable functional group, R is C1-20 linear or branched alkyl spacer group with or without carboxyl linkages, Rf is a fluoro or perfluoro alkyl group with at least the alpha carbon being fluorinated, and n is an integer equal to or greater than 2;
wherein in Formula (III) M is a polymerizable functional group R1 is an alkyl spacer with or without carboxyl linkages, Rf is a fluoro or perfluoro alkylene group with at least the alpha carbon being fluorinated, and R2 is an alkyl group.
2. The method of claim 1 wherein the one or more materials migrate toward upper portions of the photoresist composition layer during the applying.
3. The method of claim 1 wherein the (iii) one or more materials have a lower surface energy than the (i) one or more resins.
4. The method of claim 1 wherein the one or more materials comprises photoacid-labile groups.
5. The method of claim 1 further comprising developing the exposed photoresist layer with aqueous alkaline developer whereby the one or more base-reactive groups undergo a bond-breaking reaction to provide one or more polar groups.
6. The method of claim 5 wherein the photoresist layer after development has a water contact receding angle of less than 30°, and/or the photoresist layer prior to development has a water contact receding angle of in excess of 40°.
7. The method of claim 1 wherein the (iii) one or more materials comprise a repeat unit provided by at least one monomer of Formula (I).
8. The method of claim 1 wherein the (iii) ore or more materials comprise a repeat unit provided by at least one monomer of Formula (II).
9. The method of claim 1 wherein the (iii) one or more materials comprise a repeat unit provided by at least one monomer of Formula (III).