Semiconductor memory apparatus and bit line equalizing circuit

1. A semiconductor memory apparatus comprising a first bit line sense amplifier unit coupled between a first bit line and a second bit line; and

a pair of precharge elements coupled in series between the first bit line and the second bit line and having an asymmetrical contact resistance ratio,

wherein the pair of precharge elements comprises a first precharge element and a second precharge element, and

the contact resistance ratio is set so that a first charge time and a second charge time are equalized to each other,

wherein the first charge time is decided by a first contact resistance of the first precharge element coupled to the first bit line, and a capacitance existing in the first bit line, and

the second charge time is decided by a second resistance of the second precharge element coupled to the second bit line, and a capacitance existing in the second bit line.

2. The semiconductor memory apparatus according to claim 1 , wherein the pair of precharge elements comprises:

the first precharge element coupled between the first bit line and a first precharge voltage supply line and driven in response to a bit line equalize signal; and

the second precharge element coupled between a second precharge voltage supply line and the second bit line and driven in response to the bit line equalize signal,

wherein a ratio of the first contact resistance to the second contact resistance is different.

3. The semiconductor memory apparatus according to claim 2 , wherein the first precharge element comprises:

a first junction region coupled to the first bit line through a first bit line contact and a second junction region coupled to a precharge voltage supply line through a first precharge contact and is driven in response to the bit line equalize signal, and

the second precharge element comprises a third junction region coupled to the precharge voltage supply line through a second precharge contact and a fourth junction region coupled to the second bit line through a second bit line contact and is driven in response to the bit line equalize signal,

wherein the asymmetrical contact resistance ratio is set according to a ratio of a length of the first bit line contact and a length of the second bit line contact.

4. The semiconductor memory apparatus according to claim 3 , wherein the second junction region and the third junction region are the same junction region, and the first precharge contact and the second precharge contact are the same contact.

5. The semiconductor memory apparatus according to claim 3 , wherein the second junction region and the third junction region are electrically isolated from each other, the first precharge contact and the second precharge contact are electrically isolated from each other, and the asymmetrical contact resistance ratio is set according to the ratio of the length of the first bit line contact to the length of the second bit line contact and the ratio of the length of the first precharge contact to the length of the second precharge contact.

6. The semiconductor memory apparatus according to claim 2 , wherein the first precharge element comprises:

a first junction region coupled to the first bit line through a first bit line contact and a second junction region coupled to a precharge voltage supply line through a first precharge contact, and is driven in response to the bit line equalize signal, and

the second precharge element comprises a third junction region coupled to the precharge voltage supply line through a second precharge contact and a fourth junction region coupled to the second bit line through a second bit line contact, and is driven in response to the bit line equalize signal,

wherein the second junction region and the third junction region are electrically isolated from each other, the first precharge contact and the second precharge contact are electrically isolated from each other, and the asymmetrical contact resistance ratio is set according to a ratio of a length of the first precharge contact and a length of the second precharge contact.

7. The semiconductor memory apparatus according to claim 1 , further comprising one or more banks each comprising one or more memory cell arrays arranged in a line, and

the first bit line sense amplifier unit is disposed at both edges of the bank.

8. The semiconductor memory apparatus according to claim 7 , further comprising one or more second bit line sense amplifier units each comprising one or more second bit line sense amplifiers arranged between the pair of memory cell arrays adjacent to each other and coupled between first and second bit lines extended from the pair of memory cell arrays, respectively.

9. The semiconductor memory apparatus according to claim 8 , wherein each of the one or more second bit line sense amplifiers comprises a pair of precharge elements coupled in series between the first and second bit lines extended from the pair of memory cell arrays adjacent each other, respectively, and having a symmetrical contact resistance ratio.

10. A bit line equalizing circuit which is coupled between first and second bit lines, and precharges the first and second bit lines to a preset voltage, the bit line equalizing circuit comprising:

a first precharge element coupled between the first bit line and a first precharge voltage supply line and driven in response to a bit line equalize signal; and

a second precharge element coupled between a second precharge voltage supply line and the second bit line and driven in response to the bit line equalize signal,

wherein a ratio of a resistance value between the first bit line and the first precharge voltage supply line and a resistance value between the second bit line and the second precharge voltage supply line is set so that a first charge time and a second charge time are equalized to each other,

wherein the first charge time is decided by a first contact resistance of the first precharge element coupled to the first bit line, and a capacitance existing in the first bit line, and

the second charge time is decided by a second resistance of the second precharge element coupled to the second bit line, and a capacitance existing in the second bit line.

11. The bit line equalizing circuit according to claim 10 , wherein the first precharge element is coupled to the first bit line through a first bit line contact, the second precharge element is coupled to the second bit line through a second bit line contact, and the ratio of the resistance values is set according to a length of the first bit line contact and a length of the second bit line contact.

12. The semiconductor memory apparatus according to claim 10 , wherein the first precharge voltage supply line and the second precharge voltage supply line are the same voltage supply line.

13. The semiconductor memory apparatus according to claim 10 , wherein the first precharge element is coupled to the first precharge voltage supply line through a first precharge contact, the second precharge element is coupled to the second precharge voltage supply line through a second precharge contact which is electrically isolated from the first precharge contact, and the ratio of the resistance values is set according to a length of the first precharge contact and a length of the second precharge contact.

14. The semiconductor memory apparatus according to claim 13 , wherein the ratio of the resistance values is set according to the lengths of the first and second bit line contacts and the lengths of the first and second precharge contacts.