ALUMINUM BOND PADS WITH ENHANCED WIRE BOND STABILITY
A method of forming an electronic device bond pad includes providing an electronic device substrate having an Al bond pad located thereover. An aluminum layer is formed over the Al bond pad. A metal layer is formed located between the Al bond pad and the aluminum layer. The metal layer comprises one or more of Ni, Pd and Pt and has a total concentration of Ni, Pd and/or Pt of at least about 50 wt. %. A gold bond wire may be attached to the aluminum layer.
1 . A method of forming an electronic device bond pad, comprising:
providing an electronic device substrate having an Al bond pad located thereover;
forming an aluminum layer over said Al bond pad;
forming a metal layer located between said Al bond pad and said aluminum layer, said metal layer comprising one or more of Ni, Pd and Pt and having a total concentration of Ni, Pd and/or Pt of at least about 50 wt. %; and
attaching a gold bond wire to said aluminum layer.
2 . The method of claim 1 , wherein said metal layer has a thickness in a range from about 10 nm to about 200 nm.
3 . The method recited in claim 1 , wherein said aluminum layer has a thickness in a range from about 10 nm to about 200 nm.
4 . The method recited in claim 1 , wherein electronic device bond pad has an average concentration of Ni, Pd and/or Pt in a range from about 0.1 wt % to about 35 wt %.
5 . The method recited in claim 1 , wherein said electronic device bond pad has an average concentration of Ni, Pd and/or Pt in a range from about 0.5 wt % to about 12 wt %.
6 . The method recited in claim 1 , wherein said electronic device bond pad has an average concentration of Ni, Pd and/or Pt in a range from about 1 wt % to about 8 wt %.
7 . The method recited in claim 1 , wherein said substrate is mounted to a device package, and said bond wire connects said Al layer to a package pad.
8 . The method of claim 1 , wherein said gold bond wire comprises at least about 99.99% gold.
9 . The method of claim 1 , further comprising forming an intermetallic compound region comprising Al, Au and Ni, Pd and/or Pt between said gold bond wire and said Al bond pad.
10 . A method of forming an electronic device bond pad, comprising:
providing an electronic device substrate having an Al bond pad located thereover;
forming an aluminum layer over said Al bond pad; and
forming a metal layer located between said Al bond pad and said aluminum layer, said metal layer comprising one or more of Ni, Pd and Pt and having a total concentration of Ni, Pd and/or Pt of at least about 50 wt. %.
11 . The method of claim 10 , further comprising attaching a gold bond wire to said aluminum layer.
12 . The method of claim 11 , wherein said gold bond wire is at least about 99.99% pure.
13 . The method of claim 10 , wherein said Ni, Pd and/or Pt is located in a layer located between upper and lower aluminum layers and having a thickness in a range from about 10 nm to about 200 nm.
14 . The method recited in claim 10 , wherein said Ni, Pd and/or Pt has an average concentration in said electronic device bond pad in a range from about 0.1 wt % to about 35 wt %.
15 . The method recited in claim 10 , wherein said Ni, Pd and/or Pt has an average concentration in said electronic device bond pad in a range from about 0.5 wt % to about 12 wt %.
16 . The method recited in claim 10 , wherein said Ni, Pd and/or Pt has an average concentration in said electronic device bond pad in a range from about 1 wt % to about 8 wt %.
17 . The method recited in claim 11 , wherein said substrate is mounted to a device package, and said bond wire connects said Al layer to a package pad.
18 . The method of claim 11 , wherein said attaching forms an intermetallic compound region comprising Al, Au and Ni, Pd and/or Pt between said gold bond wire and said Al bond pad.
19 . A method of forming an electronic device bond pad, comprising:
forming an Al bond pad over an electronic device substrate; and
incorporating one or more of Ni, Pd and Pt into said Al bond pad to result in a total concentration of said Ni, Pd and/or Pt in said Al bond pad in a range from about 0.1 wt. % to about 35 wt. %.
20 . The method of claim 19 , further comprising attaching a bond wire comprising at least about 99.99 wt. % gold to said Al bond pad.