Metal complexes for metal-containing film deposition
View Patent ↗Novel families of tri-valent metal complexes including scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, gallium, indium, manganese, antimony, bismuth; and of divalent metal complexes including magnesium, calcium, strontium, barium, manganese, cobalt, iron, nickel, ruthenium, copper, zinc, cadium are disclosed. These metal complexes can be used as precursors to deposit metal or metal oxide films in semi-conductor industries.
1. A metal-containing complex having a structure I(A):
wherein R 1 is selected from the group consisting of linear or branched alkyl having from 1 to 10 carbon atoms; R 2 is selected from the group consisting of hydrogen, alkyl having from 1 to 10 carbon atoms, and aryl having 6 to 10 carbon atoms; R 3 is selected from the group consisting of linear or branched alkyl having 1 to 10 carbon atoms and aryl having 6 to 10 carbon atoms; R 4 is a linear or branched alkyl bridge having 2 to 10 carbon atoms; R 5 and R 6 are individually selected from the group consisting of C 1 -C 10 linear or branched alkyl; R 1 and R 2 are optionally connected to form a cyclic group; R 4 and R 5 are optionally connected to form a cyclic group; R′ is selected from the group consisting of C1-10 linear or branched alkyl or alkylsilyl having 3-10 carbon atoms; n=1 or 2; and
M is selected from the group consisting of yttrium, lanthanum, gadolinium, erbium, and magnesium.
2. The metal-containing complex of claim 1 having the structure I(A), wherein the linear or branched alkyl is selected from the group consisting of methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, sec-butyl, tert-butyl, n-pentyl, iso-pentyl, tert-pentyl, hexyl, octyl, and decyl; and the cyclic group is selected from the group consisting of 5- to 6-membered saturated hydrocarbon ring, 5- to 6-membered hydrocarbon unsaturated ring, and 5- to 6-membered aromatic ring.
3. The metal-containing complex of claim 1 having the structure I(A) selected from group consisting of M=yttrium, R 1 =Bu t , R 2 =H, R 3 =Me, R 4 =—CH(Me)CH 2 —, R 5 =R′=Me, R 6 =Pr i , and n=1; M=gadolinium, R 1 =Bu t , R 2 =H, R 3 =Me, R 4 =—CH(Me)CH 2 —, R 5 =R′=Me, R 6 =Pr i , and n=1; M=lanthanum, R 1 =Bu t , R 2 =H, R 3 =Me, R 4 =—CH(Me)CH 2 —, R 6 =R′=Me, R 6 =Pr i , n=1; and M=erbium, R 1 =But, R 2 =H, R 3 =Me, R 4 =—CH(Me)CH 2 —, R 6 =R′=Me, R 6 =Pr i , and n=1.
4. The metal-containing complex of claim 1 having the structure I(A), wherein M=Magnesium, R 1 =Bu t , R 2 =H, R 3 =Me, R 4 =—CH(Me)CH 2 —, R 6 =R′=Me, and R 6 =Et.
5. The metal-containing complex of claim 1 having the structure I(A)
wherein R 1 is selected from the group consisting of linear or branched alkyl having from 1 to 5 carbon atoms; R 2 is selected from the group consisting of hydrogen, methyl, and ethyl; R 3 is a linear or branched alkyl having 1 to 5 carbon atoms; R 4 is a linear or branched alkyl bridge having 2 to 4 carbon atoms; R 1 and R 2 are optionally connected to form a cyclic group; R 4 and R 5 are optionally be connected to form a cyclic group; R 5 and R′ are individually selected from the group consisting of a C1-2 alkyl; R 6 is selected from the group consisting of C1-5 linear or branched alkyl; and n=1 or 2.
6. A method for producing a film by depositing a precursor comprising the metal containing complex of claim 1 and having the following structure I(A):
wherein R 1 is selected from the group consisting of linear or branched alkyl having from 1 to 10 carbon atoms; R 2 is selected from the group consisting of hydrogen, alkyl having from 1 to 10 carbon atoms, and aryl having 6 to 10 carbon atoms; R 3 is selected from the group consisting of linear or branched alkyl having 1 to 10 carbon atoms and aryl having 6 to 10 carbon atoms; R 4 is a linear or branched alkyl bridge having 2 to 10 carbon atoms; R 5 and R 6 are individually selected from the group consisting of C 1 -C 10 linear or branched alkyl; R 1 and R 2 are optionally connected to form a cyclic group; R 4 and R 5 are optionally connected to form a cyclic group; R′ is selected from the group consisting of C1-10 linear or branched alkyl or alkylsilyl having 3-10 carbon atoms; n=1 or 2; and
M is selected from the group consisting of yttrium, lanthanum, gadolinium, erbium, and magnesium.
7. The method of claim 6 , wherein the depositing is selected from the group consisting of a chemical vapor deposition (CVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition, an atomic layer deposition (ALD), and plasma enhanced atomic layer deposition.
8. The method of claim 6 , wherein the linear or branched alkyl is selected from the group consisting of methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, sec-butyl, tert-butyl, n-pentyl, isopentyl, tert-pentyl, hexyl, octyl, and decyl; and the cyclic group is selected from the group consisting of 5- to 6-membered saturated hydrocarbon ring, 5- to 6-membered hydrocarbon unsaturated ring, and 5- to 6-membered aromatic ring.
9. The method of claim 6 , wherein the metal-containing complex having the structure I(A), selected from the group consisting of M=yttrium, R 1 =Bu t , R 2 =H, R 3 =Me, R 4 =—CH(Me)CH 2 —, R 5 =R′=Me, R 6 =Pr i , and n=1; M=gadolinium, R 1 =Bu t , R 2 =H, R 3 =Me, R 4 =—CH(Me)CH 2 —, R 5 =R′=Me, R 6 =Pr i , and n=1; M=lanthanum, R 1 =Bu t , R 2 =H, R 3 =Me, R 4 =—CH(Me)CH 2 —, R 5 =R′=Me, R 6 =Pr i , n=1; and M=erbium, R 1 =But, R 2 =H, R 3 =Me, R 4 =—CH(Me)CH 2 —, R 5 =R′=Me, R 6 =Pri, and n=1.
10. The method of claim 6 , wherein the metal-containing complex having the structure I(A), wherein M=Magnesium, R 1 =Bu t , R 2 =H, R 3 =Me, R 4 =—CH(Me)CH 2 —, R 5 =R′=Me, and R 6 =Et.
11. A multi-component metal oxide film by depositing a precursor comprising the metal containing complex of claim 1 and having the following the structure I(A):
wherein R 1 is selected from the group consisting of linear or branched alkyl having from 1 to 10 carbon atoms; R 2 is selected from the group consisting of hydrogen, alkyl having from 1 to 10 carbon atoms, and aryl having 6 to 10 carbon atoms; R 3 is selected from the group consisting of linear or branched alkyl having 1 to 10 carbon atoms and aryl having 6 to 10 carbon atoms; R 4 is a linear or branched alkyl bridge having 2 to 10 carbon atoms; R 5 and R 6 are individually selected from the group consisting of C 1 -C 10 linear or branched alkyl; R 1 and R 2 are optionally connected to form a cyclic group; R 4 and R 5 are optionally connected to form a cyclic group; R′ is selected from the group consisting of C1-10 linear or branched alkyl or alkylsilyl having 3-10 carbon atoms; n=1 or 2; and
M is selected from the group consisting of yttrium, lanthanum, gadolinium, erbium, and magnesium.
12. The film of claim 11 , wherein the depositing is selected form the group consisting of a chemical vapor deposition (CVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition, an atomic layer deposition (ALD), and plasma enhanced atomic layer deposition.
13. The film of claim 11 , wherein the linear or branched alkyl is selected from the group consisting of methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-butyl, sec-butyl, tert-butyl, n-pentyl, isopentyl, tert-pentyl, hexyl, octyl, and decyl; and the cyclic group is selected from the group consisting of 5- to 6-membered saturated hydrocarbon ring, 5- to 6-membered hydrocarbon unsaturated ring, and 5- to 6-membered aromatic ring.
14. The film of claim 11 , wherein the metal-containing complex having the structure I(A), selected from the group consisting of M=Yttrium, R 1 =Bu t , R 2 =H, R 3 =Me, R 4 =—CH(Me)CH 2 —, R 5 =R′=Me, R 6 =Pr i , and n=1; M=gadolinium, R 1 =Bu t , R 2 =H, R 3 =Me, R 4 =—CH(Me)CH 2 —, R 5 =R′=Me, R 6 =Pr i , and n=1; M=lanthanum, R 1 =Bu t , R 2 =H, R 3 =Me, R 4 =—CH(Me)CH 2 —, R 5 =R′=Me, R 6 =Pr i , n=1; and M=erbium, R 1 =But, R 2 =H, R 3 =Me, R 4 =—CH(Me)CH 2 —, R 5 =R′=Me, R 6 =Pri, and n=1.
15. The film of claim 11 , wherein the metal-containing complex having the structure I(A), wherein M=Magnesium, R 1 =Bu t , R 2 =H, R 3 =Me, R 4 =—CH(Me)CH 2 —, R 5 =R′=Me, and R 6 =Et.