Semiconductor device and a method of manufacturing the same and a mounting structure of a semiconductor device

1. A semiconductor device comprising:

a tab including a chip supporting surface, and a back surface opposite to the chip supporting surface;

a plurality of suspension leads supporting the tab;

a plurality of leads arranged between the suspension leads;

a semiconductor chip mounted over the chip supporting surface of the tab, the semiconductor chip including a main surface, and a rear surface opposite to the main surface;

a plurality of wires electrically connecting a plurality of pads of the semiconductor chip with the plurality of leads, respectively;

a seal portion sealing the semiconductor chip and the plurality of wires such that a first part of each of the leads is exposed from the seal portion, and such that second and third parts of each of the leads are covered with the seal portion;

a first plating film formed on the first part of each of the leads, and

a second plating film formed on the second part of each of the leads;

wherein each of the leads is comprised of copper;

wherein the first plating film is comprised of Pb-free solder containing Sn as a major element;

wherein the second plating film is comprised of silver;

wherein the plurality of wires are connected with the plurality of leads, respectively, via the second plating film; and

wherein a part of the rear surface of the semiconductor chip and the third part of each of the leads are contacted with the seal portion.

2. The semiconductor device according to claim 1 , wherein the seal portion is comprised of epoxy resin or silicon resin.

3. A semiconductor device comprising:

a tab including a chip supporting surface, and a back surface opposite to the chip supporting surface;

a plurality of suspension leads supporting the tab;

a plurality of leads arranged between the suspension leads;

a semiconductor chip mounted over the chip supporting surface of the tab, the semiconductor chip including a main surface, and a rear surface opposite to the main surface;

a plurality of wires electrically connecting a plurality of pads of the semiconductor chip with the leads, respectively;

a seal portion sealing the semiconductor chip and the plurality of wires such that a first part of each of the leads is exposed from the seal portion, and such that second and third parts of each of the plurality of leads are covered with the seal portion;

a first plating film formed on the first part of each of the leads; and

a second plating film formed on the second part of each of the leads;

wherein each of the leads is comprised of copper;

wherein the first plating film is comprised of Pb-free solder containing Sn as a major element;

wherein the second plating film is comprised of silver;

wherein the wires are connected with the leads, respectively, via the second plating film; and

wherein a part of the rear surface of the semiconductor chip and the third part of each of the leads are contacted with the seal portion,

wherein the seal portion has an upper surface located at the chip supporting surface side of the tab, a lower surface opposite to the upper surface, and a side surface located between the upper surface and the lower surface, and

wherein the first part of each of the leads is exposed from the lower surface of the seal portion.

4. The semiconductor device according to claim 3 , wherein each of the leads includes a bonding surface, and a mounting surface opposite to the bonding surface,

wherein each of the leads has one end portion, the other end portion located farther than the one end portion from the tab, and

wherein the mounting surface of the one end portion of each of the leads is covered with the seal portion.

5. The semiconductor device according to claim 3 , wherein the seal portion is comprised of epoxy resin or silicon resin.

6. A semiconductor device comprising:

a tab including a chip supporting surface, and a back surface opposite to the chip supporting surface;

a plurality of suspension leads supporting the tab;

a plurality of leads arranged between the suspension leads;

a semiconductor chip mounted over the chip supporting surface of the tab, the semiconductor chip including a main surface, and a rear surface opposite to the main surface;

a plurality of wires electrically connecting a plurality of pads of the semiconductor chip with the plurality of leads, respectively;

a seal portion sealing the semiconductor chip and the plurality of wires such that a first part of each of the leads is exposed from the seal portion, and such that second and third parts of each of the leads are covered with the seal portion;

a first plating film formed on the first part of each of the leads, and

a second plating film formed on the second part of each of the leads;

wherein each of the leads is comprised of copper;

wherein the first plating film is comprised of Pb-free solder containing Sn as a major element;

wherein the second plating film is comprised of silver;

wherein the plurality of wires are connected with the plurality of leads, respectively, via the second plating film; and

wherein a part of the rear surface of the semiconductor chip and the third part of each of the leads are connected with the seal portion,

wherein the seal portion has an upper surface located at the chip supporting surface side of the tab, a lower surface opposite to the upper surface, and a side surface located between the upper surface and the lower surface,

wherein the first part of each of the leads is exposed from the lower surface of the seal portion, and

wherein the back surface of the tab is covered with the seal portion.

7. The semiconductor device according to claim 6 , wherein each of the leads includes a bonding surface, and a mounting surface opposite to the bonding surface,

wherein each of the leads has one end portion, the other end portion located farther than the one end portion from the tab, and

wherein the mounting surface of the one end portion of each of the leads is covered with the seal portion.

8. The semiconductor device according to claim 6 , wherein the seal portion is comprised of epoxy resin or silicon resin.

9. A semiconductor device comprising:

a tab including a chip supporting surface, and a back surface opposite to the chip supporting surface;

a plurality of suspension leads supporting the tab;

a plurality of leads arranged between the suspension leads;

a semiconductor chip mounted over the chip supporting surface of the tab, the semiconductor chip including a main surface, and a rear surface opposite to the main surface;

a plurality of wires electrically connecting a plurality of pads of the semiconductor chip with the plurality of leads, respectively;

a seal portion sealing the semiconductor chip and the plurality of wires such that a first part of each of the leads is exposed from the seal portion, and such that second and third parts of each of the leads are covered with the seal portion;

a first plating film formed on the first part of each of the leads, and

a second plating film formed on the second part of each of the leads;

wherein each of the leads is comprised of copper;

wherein the first plating film is comprised of Pb-free solder containing Sn as a major element;

wherein the second plating film is comprised of silver;

wherein the plurality of wires are connected with the plurality of leads, respectively, via the second plating film; and

wherein a part of the rear surface of the semiconductor chip and the third part of each of the leads are contacted with the seal portion,

wherein the seal portion has an upper surface located at the chip supporting surface side of the tab, a lower surface opposite to the upper surface, and a side surface located between the upper surface and the lower surface,

wherein the first part of each of the leads is exposed from the lower surface of the seal portion,

wherein the back surface of the tab is covered with the seal portion, and

wherein a thickness of the tab is thinner than that of each of the leads.

10. The semiconductor device according to claim 9 , wherein the seal portion is comprised of epoxy resin or silicon resin.