Group IV metal complexes for metal-containing film deposition

1. A metal containing complex with

(1) a formula of (R 1 n Pyr) (R 2 n Pyr)ML 1 L 2 having a structure A below:

wherein M is a Group IV metal selected from the group of titanium, zirconium and hafnium, Pyr is pyrrolyl ligand, R 1 and R 2 can be same or different organic groups substituted at 2,3,4,5-positions of the pyrrole ring and selected from the group consisting of linear or branched C 1-6 alkyls, and C 3-10 alkyls containing oxygen or nitrogen atoms; n is 1, 2, 3 or 4, and one of each of R 1 and R 2 can be linked together via carbon, oxygen, or nitrogen atom; and L 1 and L 2 are independently selected from the group consisting of alkoxide, amino and C 2 -C 6 alkyl, and can be linked together;

or

(2) a formula of [(R 8 XR 9 )(R 1 n Pyr)(R 2 n Pyr)]ML 1 L 2 having a structure B below:

wherein M is a Group IV metal selected from the group of titanium, zirconium and hafnium, Pyr is pyrrolyl ligand, R 1 and R 2 can be same or different organic groups substituted at 2,3,4-positions of the pyrrole ring and selected from linear or branched C 1-6 alkyls, n =1, 2 and 3, R 8 and R 9 are independently selected from linear or branched chain alkylene group having 2-6 carbon atoms, and X is selected from the group consisting of CH 2 and oxygen, alkylamino, dialkyl silyl, and L 1 and L 2 are independently selected from the group consisting of alkoxide, amide and alkyl, and can be linked together.

2. The metal containing complex of claim 1 , wherein at least one pyrrolyl ligand is coordinated to the metal center in η 5 coordination mode.

3. The metal containing complex of claim 1 represented by the formula of (R 1 n Pyr) (R 2 n Pyr)M(NR 3 R 4 ) 2 having a structure below:

where R 3 and R 4 are independently selected from the group consisting of methyl and ethyl.

4. The metal containing complex of claim 3 , is selected from the group consisting of bis(2,5-dimethyl-pyrrolyl)bis(dimethylamino)titanium, bis(2,5-dimethyl-pyrrolyl)bis(dimethylamino)zirconium, bis(2,5-dimethyl-pyrrolyl)bis(dimethylamino)hafnium, bis(2,5-dimethyl-pyrrolyl)bis(ethylmethylamino)titanium, bis(2,5-dimethyl-pyrrolyl)bis(ethylmethylamino)zirconium, bis(2,5-dimethyl-pyrrolyl)bis(ethylmethylamino)hafnium, bis(2,5-dimethyl-pyrrolyl)bis(diethylamino)titanium, bis(2,5-dimethyl-pyrrolyl)bis(diethylamino)zirconium, bis(2,5-dimethyl-pyrrolyl)bis(diethylamino)hafnium, bis(2,3,4,5-tetramethyl-pyrrolyl)bis(dimethylamino)titanium, bis(2,3,4,5-tetramethyl-pyrrolyl)bis(dimethylamino)zirconium, bis(2,3,4,5-tetramethyl-pyrrolyl)bis(dimethylamino)hafnium, bis(2,5-di-tert-butyl-pyrrolyl)bis(dimethylamino)titanium, bis(2,5-di-tert-butyl-pyrrolyl)bis(dimethylamino)zirconium, bis(2,5-di-tert-butyl-pyrrolyl)bis(dimethylamino)hafnium, bis(2,5-di-tert-butyl-pyrrolyl)bis(dimethylamino)titanium, bis(2,5-di-tert-butyl-pyrrolyl)bis(dimethylamino)zirconium, bis(2,5-di-tert-butyl-pyrrolyl)bis(dimethylamino)hafnium, (2,5-dimethyl-pyrrolyl)(2,5-di-tert-butyl-pyrrolyl)bis(dimethylamino)titanium, (2,5-dimethyl-pyrrolyl)(2,5-di-tert-butyl-pyrrolyl)bis(dimethylamino)zirconium, and (2,5-dimethyl-pyrrolyl)(2,5-di-tert-butyl-pyrrolyl)bis(dimethylamino)hafnium.

5. The metal containing complex of claim 1 represented by the formula of (R 1 n Pyr) (R 2 n Pyr)M(NR 3 XNR 4 ), having a structure below:

wherein R 3 and R 4 are independently selected from the group consisting methyl and ethyl, and X is a linear or branched chain alkylene group having 2-6 carbon atoms.

6. The metal containing complex of claim 1 represented by the formula of (R 1 n Pyr) (R 2 n Pyr)M(OR 5 )(OR 6 )haying a structure below:

wherein R 5 and R 6 are independently selected from the group consisting of linear and branched C 1-6 alkyls.

7. The metal containing complex of claim 1 represented by the formula of (R 1 n Pyr) (R 2 n Pyr)M(R 6 R 7 OR 5 OR 8 R 9 ) having a structure below:

wherein R 5 is selected from the group consisting of linear or branched C 1-6 alkyls and R 6-9 are independently selected from the group consisting of hydrogen, linear or branched C 1-6 alkyls.

8. The metal containing complex of claim 7 is selected from the group consisting of bis(2,5-dimethyl-pyrrolyl)(2-methyl-2,4-pentanediolate)titanium, bis(2,5-dimethyl-pyrrolyl)(2-methyl-2,4-pentanediolate)zirconium, bis(2,5-dimethyl-pyrrolyl)(2-methyl-2,4-pentanediolate)hafnium, bis(2,3,4,5-tetramethyl-pyrrolyl)(2-methyl-2,4-pentanediolate)titanium, bis(2,3,4,5-tetramethyl-pyrrolyl)(2-methyl-2,4-pentanediolate)zirconium, bis(2,3,4,5-tetramethyl-pyrrolyl)(2-methyl-2,4-pentanediolate)hafnium, bis(2,5-di-tert-butyl-pyrrolyl)(2-methyl-2,4-pentanediolate)titanium, bis(2,5-di-tert-butyl-pyrrolyl)(2-methyl-2,4-pentanediolate)zirconium, and bis(2,5-di-tert-butyl-pyrrolyl)(2-methyl-2,4-pentanediolate)hafnium.

9. The metal containing complex of claim 1 represented by the formula (R 1 n Pyr) (R 2 n Pyr)M(OR 10 )(R 11 ) having a structure below:

where R 10 and R 11 are independently selected from the group consisting of linear or branched C 1-6 alkyls .

10. A method for producing a film by depositing a metal containing complex with

(1)a formula of (R 1 n Pyr) (R 2 n Pyr)ML 1 L 2 having a structure A below:

wherein M is a Group IV metal selected from the group of titanium, zirconium and hafnium, Pyr is pyrrolyl ligand, R 1 and R 2 can be same or different organic groups substituted at 2,3,4,5-positions of the pyrrole ring and selected from the group consisting of linear or branched C 1-6 alkyls, and C 3-10 alkyls containing oxygen or nitrogen atoms; n is 1, 2, 3 or 4, and one of each of R 1 and R 2 can be linked together via carbon, oxygen, or nitrogen atom; and L 1 and L 2 are independently selected from the group consisting of alkoxide, amino and C 2 -C 6 alkyl, and can be linked together; or

(2) a formula of ((R 8 XR 9 ) (R 1 n Pyr) (R 2 n Pyr))ML 1 L 2 having a structure B below:

wherein M is a Group IV metal selected from the group of titanium, zirconium and hafnium, Pyr is pyrrolyl ligand, R 1 and R 2 can be same or different organic groups substituted at 2,3,4-positions of the pyrrole ring and selected from linear or branched C 1-6 alkyls, n =1, 2 and 3, R 8 and R 9 are independently selected from linear or branched chain alkylene group having 2-6 carbon atoms, and X is selected from the group consisting of CH 2 and oxygen, alkylamino, dialkyl silyl, and L 1 and L 2 are independently selected from the group consisting of alkoxide, amide and alkyl, and can be linked together.

11. The method of claim 10 , wherein the depositing is selected from the group consisting of a chemical vapor deposition (CVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition, an atomic layer deposition(ALD), and plasma enhanced atomic layer deposition.

12. A film by depositing a precursor comprising at least one metal containing complex with

(1)a formula of (R 1 n Pyr) (R 2 n Pyr)ML 1 L 2 having a structure A below:

wherein M is a Group IV metal selected from the group of titanium, zirconium and hafnium, Pyr is pyrrolyl ligand, R 1 and R 2 can be same or different organic groups substituted at 2,3,4,5-positions of the pyrrole ring and selected from the group consisting of linear or branched C 1-6 alkyls, and C 3-10 alkyls containing oxygen or nitrogen atoms; n is 1, 2, 3 or 4, and one of each of R 1 and R 2 can be linked together via carbon, oxygen, or nitrogen atom; and L 1 and L 2 are independently selected from the group consisting of alkoxide, amino and C 2 -C 6 alkyl, and can be linked together; or

(2) a formula of ((R 8 XR 9 ) (R 1 n Pyr) (R 2 n Pyr))ML 1 L 2 having a structure B below:

wherein M is a Group IV metal selected from the group of titanium, zirconium and hafnium, Pyr is pyrrolyl ligand, R 1 and R 2 can be same or different organic groups substituted at 2,3,4-positions of the pyrrole ring and selected from linear or branched C 1-6 alkyls, n =1, 2 and 3, R 8 and R 9 are independently selected from linear or branched chain alkylene group having 2-6 carbon atoms, and X is selected from the group consisting of CH 2 and oxygen, alkylamino, dialkyl silyl, and L 1 and L 2 are independently selected from the group consisting of alkoxide, amide and alkyl, and can be linked together.

13. The film of claim 12 , wherein the depositing is selected form the group consisting of a chemical vapor deposition (CVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition, an atomic layer deposition(ALD), and plasma enhanced atomic layer deposition.

14. A semiconductor device containing a thin layer deposited by a precursor comprising at least one metal containing complex with

(1)a formula of (R 1 n Pyr) (R 2 n Pyr)ML 1 L 2 having a structure A below:

wherein M is a Group IV metal selected from the group of titanium, zirconium and hafnium, Pyr is pyrrolyl ligand, R 1 and R 2 can be same or different organic groups substituted at 2,3,4,5-positions of the pyrrole ring and selected from the group consisting of linear or branched C 1-6 alkyls, and C 3-10 alkyls containing oxygen or nitrogen atoms; n is 1, 2, 3 or 4, and one of each of R 1 and R 2 can be linked together via carbon, oxygen, or nitrogen atom;

and L 1 and L 2 are independently selected from the group consisting of alkoxide, amino and C 2 -C 6 alkyl, and can be linked together;

or

(2) a formula of ((R 8 XR 9 ) (R 1 n Pyr) (R 2 n Pyr))ML 1 L 2 having a structure B below:

wherein M is a Group IV metal selected from the group of titanium, zirconium and hafnium, Pyr is pyrrolyl ligand, R 1 and R 2 can be same or different organic groups substituted at 2,3,4-positions of the pyrrole ring and selected from linear or branched C 1-6 alkyls, n =1, 2 and 3, R 8 and R 9 are independently selected from linear or branched chain alkylene group having 2-6 carbon atoms, and X is selected from the group consisting of CH 2 and oxygen, alkylamino, dialkyl silyl, and L 1 and L 2 are independently selected from the group consisting of alkoxide, amide and alkyl, and can be linked together.

15. The film of claim 14 , wherein the thin layer is deposited by a depositing method selected form the group consisting of a chemical vapor deposition (CVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition, an atomic layer deposition(ALD), and plasma enhanced atomic layer deposition.

16. The metal containing complex of claim 1 , structure A, wherein the C 3-10 alkyls containing oxygen or nitrogen atoms is selected from the group consisting of —CH 2 CH 2 OMe and —CH 2 CH 2 NMe 2 .

17. The film of claim 12 , structure A, wherein the C 3-10 alkyls containing oxygen or nitrogen atoms is selected from the group consisting of —CH 2 CH 2 OMe and —CH 2 CH 2 NMe 2 .

18. The semiconductor device of claim 14 , structure A, wherein the C 3-10 alkyls containing oxygen or nitrogen atoms is selected from the group consisting of —CH 2 CH 2 OMe and —CH 2 CH 2 NMe 2 .