Granted Patent B2

US 8,912,667 · App. 13/362,636 · Granted Dec 16, 2014

Abstract

Claims (53)

1. A semiconductor device comprising:

a substrate;

an integrated circuit die on the substrate;

a first subset of wire bonds between the substrate and the integrated circuit die;

a second subset of wire bonds between the substrate and the integrated circuit die;

a dielectric material coating the first subset of the wire bonds along a majority of length of the first subset of the wire bonds, wherein the dielectric material includes a poregen material; and

a medium in contact with the second subset of the wire bonds along a majority of length of the second subset of the wire bonds.

2. The semiconductor device of claim 1 , wherein:

the medium comprises one of a group consisting of a vacuum, air, and an encapsulating material.

3. The semiconductor device of claim 1 , wherein:

the first subset of the wire bonds includes one of a group consisting of one signal wire bond and one ground wire bond, a power wire bond and a ground wire bond, two signal wire bonds and one ground wire bond, and two signal wire bonds and two ground wire bonds.

4. The semiconductor device of claim 1 , wherein:

the dielectric material is one of a group consisting of a low-K dielectric material, a high-K dielectric material, and a combination of the low-K and high-K dielectric materials.

5. The semiconductor device of claim 1 , wherein:

capacitance of a combination of the first dielectric material and the first subset of the plurality of wire bonds is different from capacitance of the first subset of the plurality of wire bonds.

6. The semiconductor device of claim 1 , wherein:

the dielectric material electrically decouples the first subset of wire bonds from the second subset of wire bonds.

7. The semiconductor device of claim 1 having a further characterization comprising:

one of a group consisting of a first one of the wire bonds is positioned over a second one of the wire bonds, and a first one of the wire bonds is positioned adjacent a second one of the wire bonds.

8. The semiconductor device of claim 1 , wherein:

the medium comprises a second dielectric material, wherein the dielectric material and the second dielectric material are electrically decoupled from one another.

9. A semiconductor device comprising:

a first surface;

a second surface;

a plurality of wire bonds between the first surface and the second surface; and

a dielectric material coating a first subset of the wire bonds, wherein properties of the dielectric material are different from a medium in contact with a second subset of the wire bonds so that the first subset of the wire bonds is electrically decoupled from a second subset of the plurality of wire bonds, wherein the dielectric material coats the first subset of the wire bonds for a majority of a length of the first subset of wire bonds, and wherein the dielectric material includes a poregen material.

10. The semiconductor device of claim 9 , having a further characterization comprising:

one of a group consisting of (1) the first surface is a first integrated circuit die and the second surface is a second integrated circuit die and (2) the first surface is an integrated circuit and the second surface is a substrate.

11. The semiconductor device of claim 9 , wherein:

the medium comprises one of a group consisting of the dielectric material, a second dielectric material, a vacuum, air, and an encapsulating material.

12. The semiconductor device of claim 9 , wherein:

the first subset of the wire bonds includes one of a group consisting of:

one signal wire bond and one ground wire bond,

two signal wire bonds and two ground wire bonds,

a power wire bond and a ground wire bond, and

two signal wire bonds and one ground wire bond.

13. The semiconductor device of claim 9 , wherein:

the dielectric material comprises one of a group consisting of a low-K dielectric material, a high-K dielectric material, and a combination of the low-K and high-K dielectric materials.

14. The semiconductor device of claim 9 , wherein:

the dielectric material changes capacitance of the first subset of the wire bonds.

15. The semiconductor device of claim 9 further characterized by one of a group consisting of:

a first one of the wire bonds is positioned over a second one of the wire bonds, and

the first one of the wire bonds is positioned laterally adjacent the second one of the wire bonds.

16. A method for fabricating a semiconductor device, the semiconductor device includes a plurality of wire bonds between a first set of contact pads and a second set of contact pads, the method comprising:

dispensing a first dielectric coating on a first subset of the plurality of wire bonds, wherein the coating covers a majority of length of the first subset of the plurality of wire bonds and capacitance of a combination of the first dielectric coating and the first subset of the plurality of wire bonds is different from capacitance of the first subset of the plurality of wire bonds, and wherein the dielectric material includes a poregen material.

17. The method of claim 16 wherein:

the first subset of the plurality of wire bonds includes one of a group consisting of:

one signal wire bond and one ground wire bond,

two signal wire bonds and two ground wire bonds,

a power wire bond and a ground wire bond, and

two signal wire bonds and one ground wire bond.

18. The method of claim 16 further comprising:

dispensing a second dielectric coating on a second subset of the plurality of wire bonds, wherein the second dielectric coating covers more than a majority of length of the second subset of the plurality of wire bonds and capacitance of a combination of the second dielectric coating and the second subset of the plurality of wire bonds is different from capacitance of the second subset of the plurality of wire bonds.

Assignments (23)