IP Library Granted Patent US 8,686,550
Granted Patent B2
US 8,686,550 · App. 13/371,635 · Granted Apr 1, 2014

Method and apparatus for high pressure sensor device

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Quick Facts
Patent No.
US 8,686,550
App. No.
13/371,635
Granted
Apr 1, 2014
Kind
B2
Abstract

A pressure sensor package is provided that reduces the occurrence of micro gaps between molding material and metal contacts that can store high-pressure air. The present invention provides this capability by reducing or eliminating interfaces between package molding material and metal contacts. In one embodiment, a control die is electrically coupled to a lead frame and then encapsulated in molding material, using a technique that forms a cavity over a portion of the control die. The cavity exposes contacts on the free surface of the control die that can be electrically coupled to a pressure sensor device using, for example, wire bonding techniques. In another embodiment, a region of a substrate can be encapsulated in molding material, using a technique that forms a cavity over a sub-portion of the substrate that includes contacts. A pressure sensor device can be electrically coupled to the exposed contacts.

Claims (36)

1. A method for forming a packaged semiconductor device assembly, the method comprising:

providing a lead frame comprising a plurality of leads and a device flag;

affixing a semiconductor device die to the device flag, wherein the semiconductor device die comprises a first and second major surface, the first major surface is affixed to the device flag, and the second major surface provides a surface embodied within the packaged semiconductor device assembly, wherein the surface comprises a plurality of electrical contacts;

forming an encapsulated region over a first portion of the surface using an encapsulant, wherein

said forming the encapsulated region provides a cavity region over a second portion of the surface,

a first subset of the plurality of electrical contacts is located on the second portion of the surface, and

an interface between the encapsulant and the surface along an entire border of the cavity region comprises no electrical contacts;

affixing a first semiconductor device on a portion of the second portion of the surface; and

electrically coupling the first semiconductor device to one or more of the first subset of electrical contacts; and

electrically coupling the semiconductor device die to one or more of the plurality of leads, wherein

said electrically coupling comprises coupling one or more of a second subset of the plurality of the electrical contacts to corresponding leads, and

said forming the encapsulated region comprises encapsulating the lead frame, electrical contacts of the semiconductor device die coupled to the lead frame, and a portion of the semiconductor device die excluding the second portion of the surface.

2. The method of claim 1 wherein

the semiconductor device die is a control die,

the first semiconductor device is a pressure sensor, and

the control die is configured to process signals from the pressure sensor.

3. The method of claim 1 further comprising:

placing a silicone gel in the cavity region and over and surrounding the first semiconductor device; and

placing a pressure permeable cap over the cavity region.

4. A high pressure sensor device package comprising:

a control die comprising a plurality of contacts on a first major surface of the control die;

encapsulant formed over a portion of the control die, wherein

the encapsulant defines a cavity region over a portion of the first major surface of the control die,

the cavity region exposes a subset of the plurality of contacts, and

an exposed interface between the encapsulant and the first major surface of the control die comprises none of the plurality of contacts; and

a semiconductor device affixed to the first major surface of the control die in the cavity region and electrically coupled to one or more of the exposed subset of the plurality of contacts.

5. The high pressure sensor device package of claim 4 further comprising:

a lead frame comprising a plurality of leads and a device flag, wherein

the control die is affixed to the device flag at a second major surface of the control die,

the control die is electrically coupled to one or more of the plurality of leads, and

the encapsulant is further formed over the lead frame and electrical coupling of the control die to the leads.

6. The high pressure sensor device package of claim 4 further comprising:

a silicone gel in the cavity region and over and surrounding the semiconductor device; and

a pressure permeable cap over the cavity region.

7. The high pressure sensor device package of claim 4 wherein the semiconductor device affixed to the first major surface of the control die is a pressure sensor.

8. An automobile tire pressure monitoring system comprising the high pressure sensor device package of claim 7 .

Assignments (22)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0455 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0521 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0476 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Apr 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 030256/0670 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Apr 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030256/0655 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Apr 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030256/0582 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2012
From: MCDONALD, WILLIAM G.; ARAYATA, ALEXANDER M.; BOWLES, PHILIP H.; HOOPER, STEPHEN R.
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 027707/0641 →