Oxide sintered compact, its production method, and raw material powder for producing oxide sintered compact
View Patent ↗An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.
1. An oxide sintered compact having a composition including In, Ga, Zn, and O and represented by a formula In 2 Ga 2 ZnO 7 , wherein the oxide sintered compact contains gallium chloride as an impurity in an amount of 20 ppm or less and has a relative density of 99% or higher.
2. The oxide sintered compact according to claim 1 , wherein the oxide sintered compact has a bulk resistance of 5.0×10 -2 Ωcm or less.
3. A method of producing an oxide sintered compact having a composition including In, Ga, Zn, and O and represented by a formula In 2 Ga 2 ZnO 7 , wherein indium oxide, gallium oxide and zinc oxide raw material powders respectively containing gallium chloride in an amount of 20ppm or less are mixed and sintered to produce an oxide sintered compact containing gallium chloride as an impurity in an amount of 20 ppm or less and having a relative density of 99% or higher.