Semiconductor device and method for manufacturing semiconductor device
View Patent ↗A semiconductor device includes a second oxide film and a pad electrode on a first oxide film that is formed on a front surface of a semiconductor substrate, a contact electrode and a first barrier layer formed in the second oxide film and connected to the pad electrode, a silicide portion formed between the contact electrode and a through-hole electrode layer and connected to the contact electrode and the first barrier layer, a via hole extending from a back surface of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a second barrier layer (H) and a rewiring layer formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion.
1. A semiconductor device manufacturing method, the method comprising:
forming a first insulating film on a front surface of a semiconductor substrate;
forming an electrode section in the first insulating film;
forming a barrier layer that covers the electrode section;
forming a silicide layer that is connected to the electrode section;
after said forming the silicide layer and said forming the first insulating film, forming a via hole by etching from a back surface toward the front surface of the semiconductor substrate and by using the first insulating film and the silicide layer as an etching stopping layer;
forming a second insulating film on a sidewall and a bottom surface of the via hole and on the back surface of the semiconductor substrate;
etching the second insulating film to expose the silicide layer and the first insulating film in the via hole; and
forming a through-hole electrode layer at the second insulating film on the sidewall of the via hole, the second insulating film on the back surface of the semiconductor substrate, the first insulating film on the bottom surface of the via hole, and the silicide layer.
2. The semiconductor device manufacturing method according to claim 1 , further comprising:
before said forming the through-hole electrode layer, measuring an electrical characteristic of a circuit formed at the semiconductor substrate using the electrode section.
3. A semiconductor device, comprising:
a semiconductor substrate having a front surface and a back surface;
a first insulating film that is formed on the front surface of a semiconductor substrate;
a contact electrode that is formed in the first insulating film and that is covered by a barrier layer;
a via hole that penetrates the semiconductor substrate;
a second insulating film that is formed on a sidewall of the via hole and on the back surface of the semiconductor substrate;
a through-hole electrode layer formed at the second insulating film on the sidewall of the via hole, the second insulating film on the back surface of the semiconductor substrate, and the first insulating film on a bottom surface of the via hole; and
a silicide layer that is formed in the first insulating film and between the contact electrode and the through-hole electrode layer, and that is connected to the contact electrode and to the through-hole electrode layer,
wherein the via hole penetrates the second insulating layer, and
wherein a relationship between a width A of the silicide layer and a width B of a bottom of the via hole in a cross section taken along a plane including a center axis of the via hole satisfies A≦B.
4. The semiconductor device according to claim 3 , wherein a shape of a bottom surface of the through-hole electrode layer is flat, and the bottom surface of the through-hole electrode layer is electrically connected to the contact electrode via the silicide layer.
5. The semiconductor device according to claim 3 , wherein a polysilicon film is formed on the front surface of the semiconductor substrate, and a relationship between a diameter C of the polysilicon film and a diameter A of the silicide layer in a cross section taken along a plane including the center axis of the via hole satisfies C≧A.
6. The semiconductor device according to claim 3 , wherein the first insulating film is one of an SiO 2 film, an oxynitride film, or a nitride film.
7. The semiconductor device according to claim 3 , wherein one of a polysilicon film and an amorphous silicon film is formed on the first insulating film.
8. The semiconductor device according to claim 3 , wherein the silicide layer is made of any one of tungsten silicide, titanium silicide, cobalt silicide, and nickel silicide.
9. The semiconductor device according to claim 3 , wherein the barrier layer is made of one of titanium, titanium nitride, titanium tungsten, tantalum, tantalum nitride, a high melting point metal, and a laminated film made up thereof.
10. The semiconductor device according to claim 3 , wherein a polysilicon film is disposed between the front surface of the semiconductor substrate and the first insulating film, and
wherein the via hole penetrates the polysilicon film.
11. The semiconductor device of claim 10 , wherein the through-hole electrode layer contacts the silicide layer and the first insulating film.
12. The semiconductor device of claim 3 , wherein the through-hole electrode layer contacts the silicide layer and the first insulating film.
13. The method of claim 1 , further comprising:
forming a polysilicon film on the front surface of the semiconductor substrate,
wherein the polysilicon film is disposed between the front surface of the semiconductor substrate and the first insulating film, and the via hole penetrates the polysilicon film.
14. The method of claim 13 , wherein the through-hole electrode layer contacts the silicide layer and the first insulating film.
15. The method of claim 1 , wherein the through-hole electrode layer contacts the silicide layer and the first insulating film.