Compatible vertical double diffused metal oxide semiconductor transistor and lateral double diffused metal oxide semiconductor transistor and manufacture method thereof

1. A method for fabricating an LDMOS transistor compatible with a VDMOS transistor comprising:

preparing a substrate with an LDMOS transistor area and a VDMOS transistor area;

forming an N-buried layer area by injecting ions into the substrate;

forming an epitaxial layer in the N-buried layer area, and then injecting ions into the epitaxial layer to form an N-well and a P-well in the LDMOS transistor area and a high voltage N-well in the VDMOS transistor area;

forming an isolation area at the interface between the N-well and the P-well in the LDMOS transistor area and at the interface between the LDMOS transistor area and the VDMOS transistor area;

forming a drift area in the area of the P-well of the LDMOS transistor area;

forming a gate on a part of the epitaxial layer and a part of the drift area in the area of the P-well of the LDMOS transistor area, and in the VDMOS transistor area;

forming a PBODY area in the epitaxial layer between the gate and the isolation area in the LDMOS transistor area, and in the epitaxial layer between the gates in the VDMOS transistor area;

forming an N-type GRADE area in the epitaxial layer between the drift areas in the LDMOS transistor area;

forming an NSINK area in the epitaxial layer between the isolation area and the adjacent gate in the VDMOS transistor area, the NSINK area being communicated with the N-buried layer area;

forming a source in the PBODY area and a drain in the N-type GRADE area in the LDMOS transistor area, and forming a source in the PBODY area and a drain in the NSINK area in the VDMOS transistor area; and

forming a P+ area in the PBODY area in the LDMOS transistor area, the P+ area being communicated with the source.

2. The method for fabricating an LDMOS transistor compatible with a VDMOS transistor according to claim 1 , wherein the ions injected to form the NSINK area are phosphorus ions.

3. The method for fabricating an LDMOS transistor compatible with a VDMOS transistor according to claim 2 , wherein the ions are injected at a dosage of 1×10 15 /cm 2 and energy of 300 KeV˜400 KeV.

4. The method for fabricating an LDMOS transistor compatible with a VDMOS transistor according to claim 1 , wherein the ions injected to form the N-buried layer area are antimony ions, which are injected at a dosage of 1×10 15 /cm 2 and energy of 40 KeV.

5. The method for fabricating an LDMOS transistor compatible with a VDMOS transistor according to claim 1 , wherein the drift area is formed by:

injecting phosphorus ions into a part of the area of the P well to form the drift area; and

performing an oxidization process in the drift area to form an LOCOS field plate.

6. The method for fabricating an LDMOS transistor compatible with a VDMOS transistor according to claim 5 , wherein the phosphorus ions are injected at a dosage of 1×10 12 /cm 2 and energy of 40 KeV˜50 KeV.

7. The method for fabricating an LDMOS transistor compatible with a VDMOS transistor according to claim 5 , wherein the drift area is oxidized by wet oxygen thermal oxidization method.

8. The method for fabricating an LDMOS transistor compatible with a VDMOS transistor according to claim 1 , wherein the ions injected to form the PBODY area are boron ions, which is injected at a dosage of 2×10 13 /cm 2 and energy of 40 KeV.

9. The method for fabricating an LDMOS transistor compatible with a VDMOS transistor according to claim 1 , wherein the ions injected to form the N-type GRADE area are phosphorus ions, which is injected at a dosage of 1×10 13 /cm 2 and energy of 80 KeV˜100 KeV.

10. The method for fabricating an LDMOS transistor compatible with a VDMOS transistor according to claim 1 , wherein the ions injected to form the source/drain are arsenic ions, which is injected at a dosage of 4×10 15 /cm 2 and energy of 80 KeV.

11. The method for fabricating an LDMOS transistor compatible with a VDMOS transistor according to claim 1 , wherein the ions injected to form the P+ area are boron difluoride, which is injected at a dosage of 2×10 15 /cm 2 and energy of 60 KeV˜80 KeV.

12. An LDMOS transistor compatible with a VDMOS transistor, comprising: a substrate with an LDMOS transistor area and a VDMOS transistor area; an N-buried layer area located in the substrate; an epitaxial layer located in the N-buried layer area; an N-well and a P-well adjoining the N-well, which are formed in the epitaxial layer of the LDMOS transistor area; a high voltage N-well located in the VDMOS transistor area; an isolation area located at the interface between the N-well and the P-well in the LDMOS transistor area and at the interface between the LDMOS transistor area and the VDMOS transistor area; a drift area located in the area of the P-well of the LDMOS transistor area; a gate located on a part of the epitaxial layer and a part of the drift area in the area of the P-well of the LDMOS transistor area, and on the epitaxial layer of the VDMOS transistor area; a PBODY area located in the epitaxial layer between the gate and the isolation area in the LDMOS transistor area, and in the epitaxial layer between the gates in the VDMOS transistor area; an N-type GRADE area located in the epitaxial layer between the drift areas in the LDMOS transistor area; a source located in the PBODY area of the LDMOS transistor area and the PBODY area of the VDMOS transistor area; and a P+ area located in the PBODY area of the LDMOS transistor area and communicated with the source, wherein the LDMOS transistor further comprises: an NSINK area located in the epitaxial layer between the isolation area and the adjacent gate in the VDMOS transistor area and communicated with the N-buried layer area; and drains located in the N-type GRADE area of the LDMOS transistor area and in the NSINK area.