Lead frame sulfur removal
View Patent ↗A packaged electronic component and method of forming. The packaged electronic component is formed with a lead frame. The lead frame includes at least one silver structure. The silver structure attracts sulfur so as to inhibit sulfur contamination on the rest of the lead frame. In one example, the silver of the at least one silver structure has an average grain size thickness of one micron or less. In one embodiment, a sulfur removal process can be performed to remove sulfur from the silver structure.
1. A method of forming a packaged electronic component, the method comprising:
performing a sulfur removal process on a lead frame with at least one silver structure to remove sulfur from the at least one silver structure;
attaching an electronic component to the lead frame;
electrically coupling at least one conductive structure of the electronic component to the lead frame;
encapsulating the electronic component and at least a portion of the lead frame.
2. The method of claim 1 wherein the sulfur removal process includes a low temperature hydrogen anneal process.
3. The method of claim 1 wherein the sulfur removal process includes a sputter etch process.
4. The method of claim 3 wherein the sputter etch process is characterized as an ion sputter etch process.
5. The method of claim 4 wherein the ion sputter etch process is characterized as an inert gas ion sputter etch process.
6. The method of claim 5 wherein the inert gas ion sputter etch process is characterized as an argon ion sputter etch process.
7. The method of claim 1 wherein the at least one silver structure includes silver, wherein the sliver of the at least one silver structure has an average grain size of one micron or less.
8. The method of claim 7 wherein the sliver of the at least one silver structure has an average grain size of 0.15 microns or less.
9. The method of claim 1 wherein all of the at least one silver structure has a total surface area of sufficient size to inhibit sulfur contamination of a remaining portion of the lead frame prior to the attachment of the electronic component.
10. The method of claim 1 further comprising:
attaching at least one other electronic component to the lead frame;
singulating the lead frame to form a plurality of electronic component packages each with at least one electronic component, wherein at least one silver structure of the at least one silver structure is not in any of the electronic component packages formed from singulating the lead frame.
11. The method of claim 1 further comprising:
receiving the lead frame from a lead frame supplier;
wherein the performing a sulfur removal process is performed after the lead frame is received from the lead frame supplier but before the electronic component is attached to the lead frame.
12. A method of forming a packaged electronic component comprising:
attaching an electronic component to a lead frame with at least one silver structure, wherein the at least one silver structure includes silver, wherein the sliver of the at least one silver structure has an average grain size of one micron or less;
electrically coupling at least one conductive structure of the electronic component to the lead frame;
encapsulating the electronic component and at least a portion of the lead frame.
13. The method of claim 12 wherein the sliver of the at least one silver structure has an average grain size of 0.15 microns or less.
14. The method of claim 12 further comprising performing a sulfur removal process on the lead frame to remove sulfur from the at least one silver structure.
15. The method of claim 12 wherein the at least one silver structure has a thickness of greater than one micron.
16. The method of claim 12 further comprising:
attaching at least one other electronic component to the lead frame;
singulating the lead frame to form a plurality of electronic component packages each with at least one electronic component, wherein at least one silver structure of the at least one silver structure is not in any of the electronic component packages formed from singulating the lead frame.