Semiconductor devices including a ruthenium film
Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.
1. A semiconductor device, comprising;
an adhesion material comprising silicon and ruthenium on a substrate; and
a ruthenium material overlying and in contact with the adhesion material, the ruthenium material having a surface with a silicon content of between 0 atomic percent and 0.01 atomic percent.
2. The semiconductor device of claim 1 , wherein the ruthenium material comprises an increasing concentration of ruthenium and a decreasing concentration of silicon extending from the adhesion material to the surface of the ruthenium material, an upper portion of the ruthenium material substantially free of silicon.
3. The semiconductor device of claim 1 , further comprising another ruthenium material over the ruthenium material, the ruthenium material comprising a reduced porosity than the another ruthenium material.
4. The semiconductor device of claim 1 , wherein the adhesion material comprises ruthenium, silicon, and oxygen.
5. The semiconductor device of claim 1 , wherein the ruthenium material comprises ruthenium and hydrogen.
6. A semiconductor device, comprising:
an adhesion material comprising ruthenium and silicon on a substrate;
a ruthenium material overlying and in contact with the adhesion material, the ruthenium material having an increasing concentration of ruthenium and a decreasing concentration of silicon extending from the adhesion material to a surface of the ruthenium material, and the surface of the ruthenium material substantially free of silicon; and
another ruthenium material over the ruthenium material, the ruthenium material comprising a reduced porosity than the another ruthenium material.
7. The semiconductor device of claim 6 , wherein the surface of the ruthenium material is substantially free of silicon to a depth of from about 10 angstroms to 30 angstroms.
8. The semiconductor device of claim 6 , wherein the silicon concentration of the adhesion material is between about 10 atomic percent and 90 atomic percent and the silicon concentration at the surface of the ruthenium material is between O atomic percent and 0.01 atomic percent.
9. The semiconductor device of claim 6 , wherein the ruthenium material is between about 50 angstroms and 300 angstroms thick.
10. The semiconductor device of claim 6 , wherein the adhesion material is between about 2 angstroms and 50 angstroms thick.
11. The semiconductor device of claim 6 , wherein the adhesion material is about a monolayer thick.
12. The semiconductor device of claim 6 , wherein the adhesion material consists essentially of ruthenium silicide.
13. The semiconductor device of claim 6 , wherein the ruthenium material contains no oxygen.
14. A semiconductor device, comprising:
an adhesion material comprising ruthenium silicide on a substrate; and
a ruthenium material overlying and in contact with the adhesion material, wherein the ruthenium material comprises an increasing concentration of ruthenium and a decreasing concentration of silicon extending from the adhesion material to a surface of the ruthenium material and the silicon content at the surface of the ruthenium material is between about 0 atomic percent and 0.01 atomic percent.
15. The semiconductor device of claim 14 , wherein the substrate comprises silicon.
16. The semiconductor device of claim 14 , wherein the substrate comprises borophosphosilicate glass, phosphosilicate glass or silicon nitride.
17. A semiconductor device, comprising:
an adhesion material comprising ruthenium and silicon on a substrate;
a ruthenium material overlying and in contact with the adhesion material, the ruthenium material comprising an increasing concentration of ruthenium and a decreasing concentration of silicon extending from the adhesion material to a surface of the ruthenium material, wherein the silicon concentration at the surface of the ruthenium material is between 0 atomic percent and 0.01 atomic percent; and
a dielectric material overlying the ruthenium material.
18. The semiconductor device of claim 17 , wherein the dielectric material comprises a high-K dielectric material.
19. The semiconductor device of claim 18 , wherein the high-K dielectric material comprises tantalum oxide.
20. A capacitor, comprising a lower electrode, the lower electrode comprising:
an adhesion material comprising ruthenium and silicon overlying and in contact with a dielectric material; and
a ruthenium material overlying and in contact with the adhesion material, wherein the ruthenium material comprises an increasing concentration of ruthenium and a decreasing concentration of silicon extending from the adhesion material to a surface of the ruthenium material, wherein the silicon content at the surface of the ruthenium material is between about 0 atomic percent and 0.01 atomic percent.
21. The capacitor of claim 20 , wherein the lower electrode is situated within an opening in the dielectric material.
22. The capacitor of claim 20 , further comprising a high-K dielectric material over and in contact with the ruthenium material.
23. The capacitor of claim 22 , wherein the high-K dielectric material comprises tantalum oxide having a hexagonal crystalline structure throughout.
24. The capacitor of claim 22 , further comprising a conductive material over the high-K dielectric material.
25. An integrated circuit supported by a substrate, and comprising a ruthenium material overlying and in contact with an adhesion material comprising silicon and ruthenium, wherein the ruthenium material comprises an increasing concentration of ruthenium and a decreasing concentration of silicon extending from the adhesion material to a surface of the ruthenium material, the silicon content at the surface of the ruthenium material between about 0 atomic percent and 0.01 atomic percent.