Metal-enolate precursors for depositing metal-containing films

1. A metal-containing precursor comprising an enolate ligand, said metal-containing precursor represented by the following Formula 1:

wherein M is a metal with an oxidation state of (n), from +2 to +6, selected from the Lanthanides or Group 3 to Group 16, of the Periodic Table; R 1 , R 2 and R 3 are independently selected from the group consisting of: methyl, ethyl, propyl, iso-propyl, butyl, isobutyl, sec-butyl, pentyl, isopentyl, sec-pentyl, hexyl, sec-hexyl, tert-butyl, tert-amyl, and 1,1-dimethylbutyl; (L) is an anionic ligand or a mixture of anionic ligands selected from the group consisting of: alkoxy, alkylamino, and dialkylamino; (Z) is a neutral coordinating ligand selected from the group consisting of an alkylamine, polyalkylamine, ether, polyether, imidazole, pyridine, alkyl substituted pyridine, pyrimidine, alkyl substituted pyrimidine, and oxazole; (y)=0 to 4; (x)=1 to 6.

2. The precursor of claim 1 comprising bis(2,2,5,5-tetramethylhex-3-en-3-olato)bis(iso-propoxy)titanium.

3. The precursor of claim 1 comprising a compound from Formula 1, wherein (L) is an alkoxy anion, as represented by structure A1:

wherein R 4 is selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, pentyl, isopentyl, sec-pentyl, hexyl, sec-hexyl, tert-butyl, tert-amyl, and 1,1-dimethylbutyl.

4. A method for forming a metal-containing film by a vapor deposition, the method comprising the steps of:

a. introducing a metal-containing precursor of claim 1 in a vapor state into a reaction chamber and chemisorbing the metal-containing precursor onto a substrate which is heated;

b. purging away the unreacted metal-containing precursor;

c. introducing an oxygen source onto the heated substrate to react with the sorbed metal-containing precursor; and

d. purging away the unreacted oxygen source.

5. A method of claim 4 wherein the vapor deposition method comprises chemical vapor deposition.

6. A method of claim 5 wherein the vapor deposition method comprises plasma enhanced chemical vapor deposition.

7. A method of claim 4 wherein the vapor deposition method comprises atomic vapor deposition.

8. A method for forming a metal-containing film by an atomic layer deposition method, the method comprising the steps of:

a. introducing a metal-containing precursor of claim 1 in a vapor state into a reaction chamber and chemisorbing the metal-containing precursor onto a heated substrate;

b. purging away the unreacted metal-containing precursor;

c. introducing an oxidizing source selected from the group consisting of oxygen, ozone, nitrous oxide or water onto the heated substrate to react with the adsorbed metal-containing precursor; and,

d. purging away the unreacted oxidizing source; and,

repeating steps a through d to provide the metal-containing film.