Supercritical drying method for semiconductor substrate and supercritical drying apparatus
According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
1. A supercritical drying method for a semiconductor substrate, comprising:
introducing the semiconductor substrate into a chamber, a surface of the semiconductor substrate being wet with alcohol;
substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide;
discharging the supercritical fluid and the alcohol from the chamber while reducing a pressure inside the chamber; and
performing a baking treatment in the treatment chamber while supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
2. The supercritical drying method for a semiconductor substrate according to claim 1 , wherein the temperature inside the chamber is increased to a temperature equal to or more than the thermodecomposition temperature or the boiling point of an organic component contained in the carbon dioxide before performing the baking treatment.
3. The supercritical drying method for a semiconductor substrate according to claim 1 , further comprising:
cleaning the semiconductor substrate with a chemical liquid;
rinsing the semiconductor substrate with pure water after the cleaning of the semiconductor substrate with the chemical liquid; and
rinsing the semiconductor substrate with the alcohol after the rinsing of the semiconductor substrate with the pure water and before the introducing the semiconductor substrate into the chamber.
4. The supercritical drying method for a semiconductor substrate according to claim 1 , wherein
the semiconductor substrate has a metal film formed thereon; and
the temperature inside the chamber is maintained at 75° C. or more, and less than a critical temperature of the alcohol during the substituting the alcohol on the semiconductor substrate with the supercritical fluid and during the reducing the pressure inside the chamber.
5. The supercritical drying method for a semiconductor substrate according to claim 4 , wherein
the temperature inside the chamber is maintained at 97° C. or more during substituting the alcohol on the semiconductor substrate with the supercritical fluid and during the reducing the pressure inside the chamber.
6. The supercritical drying method for a semiconductor substrate according to claim 4 , wherein the metal film contains tungsten, titanium, or titanium nitride.
7. The supercritical drying method for a semiconductor substrate according to claim 1 , wherein the oxygen gas or the ozone gas is supplied to the chamber when the pressure inside the chamber is atmospheric pressure.
8. The supercritical drying method for a semiconductor substrate according to claim 1 , wherein the alcohol is isopropyl alcohol.