Thermal treatment method of silicon wafer and silicon wafer
View Patent ↗There is provided a thermal treatment method of a silicon wafer. The method includes the successive steps of: (a) terminating silicon atoms existing on an active surface of the silicon wafer with hydrogen, wherein the active surface is mirror-polished, and a semiconductor device is to be formed on the active surface; (b) terminating the silicon atoms existing on the active surface of the silicon wafer with fluorine; (c) rapidly heating the silicon wafer to a first temperature under an inert gas atmosphere or a reducing gas atmosphere, wherein the first temperature is in a range of 1300° C. to 1400° C.; (d) holding the silicon wafer at the first temperature for a certain time; and (e) rapidly cooling the silicon wafer.
1. A thermal treatment method of a silicon wafer, the method comprising the successive steps of:
(a) terminating silicon atoms existing on an active surface of the silicon wafer with hydrogen, wherein the active surface is mirror-polished, and a semiconductor device is to be formed on the active surface;
(b) terminating the silicon atoms existing on the active surface of the silicon wafer with fluorine;
(c) rapidly heating the silicon wafer to a first temperature under an inert gas atmosphere or a reducing gas atmosphere, wherein the first temperature is in a range of 1300° C. to 1400° C.;
(d) holding the silicon wafer at the first temperature for a certain time; and
(e) rapidly cooling the silicon wafer.
2. The method of claim 1 , wherein
step (a) comprises: rinsing the silicon wafer with a hydrogen fluoride-based solution or a hydrogen peroxide-based solution, and
step (b) comprises: heating the silicon wafer at a second temperature under a fluorine-based gas atmosphere, wherein the second temperature is in a range of 900° C. to 1250° C.
3. A thermal treatment method of a silicon wafer, the method comprising the successive steps of:
(a) terminating silicon atoms existing on an active surface of the silicon wafer with hydrogen by rinsing the silicon wafer with a hydrogen fluoride-based solution or a hydrogen peroxide-based solution, wherein the active surface is mirror-polished, and a semiconductor device is to be formed on the active surface;
(b) terminating the silicon atoms existing on the active surface of the silicon wafer with fluorine by heating the silicon wafer at a first temperature under a fluorine-based gas atmosphere, wherein the first temperature is in a range of 900° C. to 1250° C.;
(c) rapidly heating the silicon wafer from the first temperature to a second temperature under an inert gas atmosphere or a reducing gas atmosphere, wherein the second temperature is in a range of 1300° C. to 1400° C.;
(d) holding the silicon wafer at the second temperature for a certain time; and
(e) rapidly cooling the silicon wafer.
4. The method of claim 1 ,
wherein step (c) comprises: heating the silicon wafer at a temperature increase rate of 10° C./second to 150° C./second, and
wherein step (e) comprises: cooling the silicon wafer at a temperature decrease rate of 10° C./second to 150° C./second.
5. The method of claim 3 ,
wherein step (c) comprises: heating the silicon wafer at a temperature increase rate of 10° C./second to 150° C./second, and
wherein step (e) comprises: cooling the silicon wafer at a temperature decrease rate of 10° C./second to 150° C./second.
6. The method of claim 3 ,
wherein step (c) comprises: heating the silicon wafer at a temperature increase rate of 10° C./second to 150° C./second, and
wherein step (e) comprises: cooling the silicon wafer at a temperature decrease rate of 10° C./second to 50° C./second.
7. The method of claim 1 , wherein
the certain time is in a range of 1 to 30 seconds.
8. The method of claim 3 , wherein
the certain time is in a range of 1 to 30 seconds.