Bump structures for multi-chip packaging
View Patent ↗The mechanisms for forming a multi-chip package described enable chips with different bump sizes being packaged to a common substrate. A chip with larger bumps can be bonded with two or more smaller bumps on a substrate. Conversely, two or more small bumps on a chip may be bonded with a large bump on a substrate. By allowing bumps with different sizes to be bonded together, chips with different bump sizes can be packaged together to form a multi-chip package.
1. A chip package, comprising:
a first bump structure between a first chip and a substrate of the chip package, wherein a first solder layer of the first bump structure surrounds more than one bump on the substrate, and the solder layer covers an entirety of each sidewall of each bump of the more than one bump.
2. The chip package of claim 1 , wherein the first bump structure includes one bump of the first chip.
3. The chip package of claim 1 , wherein there is a second chip on the chip package, and wherein there is a second bump structure between the second chip and the substrate, wherein a solder layer of the second bump structure connects a bump on the substrate with a bump on the second chip.
4. The chip package of claim 3 , wherein the more than one bump of the first bump structure and the bump on the substrate of the second bump structure are about the same size.
5. The chip package of claim 1 , wherein widths of the more than one bump on the substrate are in a range from about 5 μm to about 30 μm.
6. The chip package of claim 1 , wherein the more than one bump on the substrate includes 2, 3, 4, 5, 6, 7, or 8 bumps.
7. The chip package of claim 2 , where the bump on the first chip has a width greater than about 40 μm and equal to or less than about 120 μm.
8. The chip package of claim 1 , the first chip is memory chip.
9. The chip package of claim 1 , wherein the substrate is an interposer.
10. The chip package of claim 9 , wherein the more than one bump on the substrate includes a copper post bump.
11. The chip package of claim 2 , wherein the bump on the first chip is a controlled collapse chip connection (C4) bump including at least a copper layer.
12. The chip package of claim 1 , wherein widths of the more than one bump on the substrate are in a range from about 2 μm to about 10 μm and where a bump on the first chip has a width greater than about 10 μm and equal to or less than about 40 μm.
13. A multi-chip package, comprising:
a first bump structure between a first chip and a substrate of the chip package, wherein a first solder layer of the first bump structure surrounds more than one bump on the substrate, and the solder layer covers an entirety of each sidewall of each bump of the more than one bump; and
a second chip on the chip package, and wherein there is a second bump structure between the second chip and the substrate, wherein a solder layer of the second bump structure connects a bump on the substrate with a bump on the second chip.
14. A method of forming a chip package, comprising:
providing a first chip with a C4 bump;
providing a substrate with a plurality of bumps; and
forming a first bump structure by bonding the C4 bump with at least two bumps of the plurality of bumps of the substrate, wherein the C4 bump surrounds at least two bumps of the plurality of bumps, and the C4 bump covers an entirety of each sidewall of each bump of the at least two bumps.
15. The method of claim 14 , further comprising:
providing a second chip with a copper post bump; and
forming a second bump structure by bonding the copper post bump with another bump on the substrate.
16. The method of claim 15 , wherein forming the first bump structure and the second bump structure involves reflowing solder layer in each bump structure to form a reflowed solder layer.
17. The method of claim 14 , wherein the C4 bump of the first chip has a width greater than about 40 μm and equal to or less than about 120 μm and the plurality of bumps of the substrate has a width in a range from about 5 μm to about 30 μm.
18. The method of claim 14 , further comprising:
forming memory devices on the first chip before the first chip is provided.
19. The method of claim 14 , further comprising:
forming through silicon vias (TSVs) on the substrate before the substrate is provided.
20. The method of claim 15 , wherein the first and the second bump structures are formed by reflowing solder in the first and second bump structures at the same time.