High voltage GaN transistor

1. A transistor device, comprising:

an active region;

source and drain electrodes in electrical contact with said active region;

a gate electrode between said source and drain electrodes and in electrical contact with said active region;

a plurality of field plates on said active region, wherein a first of said field plates is integral with said gate electrode and extends toward said source electrode and a second of said field plates is integral with said gate electrode extending toward said drain electrode, said first field plate extending a greater distance toward said source electrode than said second field plate extends toward said drain electrode without contacting said source electrode; and

wherein said field plates are configured such that the transistor exhibits a blocking voltage of at least 600 Volts while supporting a current of at least 2 Amps.

2. The transistor of claim 1 , comprising an on resistance of less than 5.0 mΩ-cm 2 .

3. The transistor of claim 1 , supporting a current of at least 3 Amps with an on resistance of less than 5.3 mΩ-cm 2 .

4. The transistor of claim 1 , further comprising an insulating layer below each of said field plates.

5. The transistor of claim 1 , further comprising a plurality of insulating spacer layers, a first of said spacer layers interposed between a first of said field plates and said active region, others of said spacer layers on said first field plate.

6. The transistor of claim 1 , wherein at least one of said field plates is electrically connected to said gate electrode structure.

7. The transistor of claim 5 , wherein a first one of said field plates is integral to said gate electrode and extends on said first spacer layer toward said source electrode, and wherein at least one field plate is connected to said source electrode.

8. The transistor device of claim 1 , wherein an outermost of said field plates is farthest from said gate electrode, said outermost field plate electrically connected to said source electrode.

9. The transistor device of claim 8 , wherein said outermost field plate is electrically connected to said source through at least one conductive bus extending from said outermost field plate to said source electrode.

10. The transistor device of claim 8 , wherein said outermost field plate is connected to said source through a conductive bus, at least a portion of said conductive bus external to the footprint of said active region.

11. The transistor device of claim 7 , wherein a second of said field plates is integral to said gate electrode and extends on said first spacer layer toward said drain.

12. A transistor device, comprising:

an active region;

source and drain electrodes in electrical contact with said active region;

a gate electrode comprising a gate length, said gate electrode between said source and drain electrodes and in electrical contact with said active region;

a plurality of field plates on said active region, wherein a first of said field plates is integral with said gate electrode and extends toward said source electrode a distance equal to or longer than said gate length and a second of said field plates is integral with said gate electrode extending toward said drain electrode, said first field plate extending a greater distance toward said source electrode than said second field plate extends toward said drain electrode without contacting said source electrode; and

wherein said field plates are configured such that transistor exhibits a blocking voltage of at least 900 Volts while supporting a current of at least 2 Amps.

13. The transistor device of claim 12 , comprising an on resistance of less than 6.6 mΩ-cm 2 .

14. The transistor device of claim 12 , exhibiting a blocking voltage of at least 900 Volts while supporting a current of at least 3 Amps with an on resistance of less than 7.0 mΩ-cm 2 .

15. A transistor, comprising:

an active region;

source and drain electrodes in electrical contact with said active region;

a gate electrode between said source and drain electrodes and in electrical contact with said active region;

a plurality of field plates on said active region, a first and second of said field plates integral with said gate electrode and extending toward said source and drain electrodes respectively, wherein said first field plate is longer than said second field plate and does not contact said source electrode; and

an outermost field plate of said plurality of field plates that is farthest from said gate electrode is electrically connected to said source electrode.

16. The transistor of claim 15 , further comprising a plurality of insulating spacer layers, a first of said spacer layers interposed between a first of said field plates and said active region, others of said spacer layers on said first field plate to isolate others of said field plates from the layers below.

17. The transistor of claim 15 , exhibiting a blocking voltage of at least 600 Volts while supporting a current of at least 2 Amps with an on resistance of less than 5.0 mΩ-cm 2 .

18. The transistor of claim 15 , exhibiting a blocking voltage of at least 600 Volts while supporting a current of at least 3 Amps with an on resistance of less than 5.3 mΩ-cm 2 .

19. The transistor of claim 15 , exhibiting a blocking voltage of at least 900 Volts while supporting a current of at least 2 Amps with an on resistance of less than 6.6 mΩ-cm 2 .

20. The transistor of claim 15 , exhibiting a blocking voltage of at least 900 Volts while supporting a current of at least 3 Amps with an on resistance of less than 7.0 mΩ-cm 2 .

21. The transistor of claim 15 , further comprising a high electron mobility transistor.