Semiconductor chip with reinforcing through-silicon-vias
View Patent ↗A method of manufacturing includes connecting a first end of a first through-silicon-via to a first die seal proximate a first side of a first semiconductor chip. A second end of the first thu-silicon-via is connected to a second die seal proximate a second side of the first semiconductor chip opposite the first side.
1. An apparatus, comprising:
a first semiconductor chip having a first side and a second and opposite side and including a first die seal proximate the first side and a second die seal proximate the second side; and
a first through-silicon-via having a first end connected to the first die seal and a second end connected to the second die seal.
2. The apparatus of claim 1 , wherein the first die seal is electrically connected to ground.
3. The apparatus of claim 1 , wherein the first semiconductor chip comprises an electrostatic discharge diode electrically connected to the first die seal.
4. The apparatus of claim 1 , comprising a third die seal proximate the first side and connected to the first end of the first through-silicon-via and a fourth die seal proximate the second side and connected to the second end of the first through-silicon-via.
5. The apparatus of claim 1 , comprising a third die seal proximate the first side, a fourth die seal proximate the second side, and a second through-silicon-via having a first end connected to the third die seal and a second end connected to the fourth die seal.
6. The apparatus of claim 5 , comprising a conductor member connected to adjacent surfaces of the first and second through-silicon-vias.
7. The apparatus of claim 1 , comprising a second semiconductor chip stacked on the first semiconductor chip.
8. The apparatus of claim 7 , wherein the first semiconductor chip comprises an interposer.
9. The apparatus of claim 1 , wherein the first semiconductor chip comprises a continuity circuit electrically connected to the first through-silicon-via.
10. The apparatus of claim 1 , comprising a gettering layer in the first semiconductor chip in contact with the first through-silicon-via.
11. An apparatus, comprising:
a circuit board;
a first semiconductor chip coupled to the circuit board and having a first side and a second and opposite side and including a first die seal proximate the first side and a second die seal proximate the second side; and
a first through-silicon-via having a first end connected to the first die seal and a second end connected to the second die seal.
12. The apparatus of claim 11 , wherein the circuit board comprises a semiconductor chip package substrate.
13. The apparatus of claim 11 , wherein the first semiconductor chip comprises an electrostatic discharge diode electrically connected to the first die seal.
14. The apparatus of claim 11 , comprising a third die seal proximate the first side and connected to the first end of the first through-silicon-via and a fourth die seal proximate the second side and connected to the second end of the first through-silicon-via.
15. The apparatus of claim 11 , comprising a third die seal proximate the first side, a fourth die seal proximate the second side, and a second through-silicon-via having a first end connected to the third die seal and a second end connected to the fourth die seal.
16. The apparatus of claim 15 , comprising a conductor member connected to adjacent surfaces of the first and second through-silicon-vias.
17. The apparatus of claim 11 , comprising a second semiconductor chip stacked on the first semiconductor chip.
18. The apparatus of claim 17 , wherein the first semiconductor chip comprises an interposer.
19. The apparatus of claim 11 , wherein the first semiconductor chip comprises a continuity circuit electrically connected to the first through-silicon-via.
20. The apparatus of claim 11 , comprising a gettering layer in the first semiconductor chip in contact with the first through-silicon-via.
21. An apparatus, comprising:
a first semiconductor chip having a first side and a second and opposite side and including a first die seal proximate the first side and a second die seal proximate the second side;
a first through-silicon-via having a first end connected to the first die seal and a second end connected to the second die seal; and
wherein the apparatus is embodied in instructions stored in a computer readable medium.