IP Library › Granted Patent US 9,472,585
Granted Patent B2
US 9,472,585 · App. 13/461,910 · Granted Oct 18, 2016

Semiconductor package, semiconductor device manufacturing method, and solid-state imaging device

Inventor: Masayuki Ishikida (Kanagawa, JP)
Assignee: SONY CORPORATION
H01L27/14618H01L2224/48091H01L2224/48227
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,472,585
App. No.
13/461,910
Granted
Oct 18, 2016
Kind
B2
Abstract

A semiconductor package includes: a sheet-like thin plate on which a semiconductor chip is secured; and a substrate including a wiring layer, disposed on the thin plate to extend over a part of a region surrounding the region where the semiconductor chip is secured or over the entire surrounding region, wherein the semiconductor chip and the substrate are electrically connected.

Claims (29)

1. A semiconductor package comprising:

a flat sheet-like thin plate made of sheet metal having a uniformly flat surface on which a semiconductor chip is secured; and

a multilayer wiring substrate having a plurality of wiring patterns, wherein the plurality of wiring patterns include a plurality of wiring layers formed within the multilayer wiring substrate, wherein the multilayer wiring substrate is disposed on the uniformly flat surface of the thin plate to extend:

over a part of a first region surrounding a second region where the semiconductor chip is secured or

over the entire first region,

wherein the semiconductor chip and the multilayer wiring substrate are electrically connected, and

wherein the multilayer wiring substrate is disposed on the flat sheet-like thin plate in such a manner that the multilayer wiring substrate does not extend beyond the flat sheet-like thin plate.

2. The semiconductor package according to claim 1 , wherein the flat sheet-like thin plate is formed of stainless steel.

3. The semiconductor package according to claim 1 , wherein the flat sheet-like thin plate and the multilayer wiring substrate are electrically connected.

4. The semiconductor package according to claim 1 , wherein at least some portions of the plurality of wiring patterns are surrounded by the multilayer wiring substrate.

5. The semiconductor package according to claim 1 , wherein the semiconductor chip is an image sensor having a plurality of pixels.

6. The semiconductor package according to claim 1 , wherein the semiconductor chip is secured on the uniformly flat surface of the flat sheet-like thin plate using die bonding, wherein a bonding material used for die bonding is a material having insulating properties.

7. The semiconductor package according to claim 1 , wherein the semiconductor chip is secured on the uniformly flat surface of the flat sheet-like thin plate using die bonding, wherein a bonding material used for die bonding is a conductive material.

8. The semiconductor package according to claim 1 , wherein the flat sheet-like thin plate has a thickness of about 0.1 mm.

9. A method of manufacturing a semiconductor device comprising:

securing a semiconductor chip on a uniformly flat surface of a flat sheet-like thin plate made of sheet metal;

disposing a multilayer wiring substrate having a plurality of wiring patterns on the uniformly flat surface of the flat sheet-like thin plate such that the multilayer wiring substrate extends:

over a part of a first region surrounding a second region where the semiconductor chip is secured or

over the entire first region,

wherein the plurality of wiring patterns include a plurality of wiring layers formed within the multilayer wiring substrate; and

electrically connecting the semiconductor chip and the multilayer wiring substrate, wherein the multilayer wiring substrate is disposed on the flat sheet-like thin plate in such a manner that the multilayer wiring substrate does not extend beyond the flat sheet-like thin plate.

10. The method according to claim 9 , wherein the semiconductor chip is connected to a ground potential when being connected to the flat sheet-like thin plate.

11. The method according to claim 9 , wherein the flat sheet-like thin plate and the wiring substrate are electrically connected when the flat sheet-like thin plate is connected to a ground potential.

12. A semiconductor package comprising:

a flat sheet-like thin plate made of sheet metal having a uniformly flat surface on which a semiconductor chip is secured; and

a multilayer wiring substrate having a plurality of wiring patterns, wherein the plurality of wiring patterns include a plurality of wiring layers formed within the multilayer wiring substrate, wherein the multilayer wiring substrate is disposed on the uniformly flat surface of the thin plate to extend:

over an entire first region surrounding a second region where the semiconductor chip is secured,

wherein the semiconductor chip and the multilayer wiring substrate are electrically connected, and

wherein the multilayer wiring substrate is disposed on the flat sheet-like thin plate in such a manner that the multilayer wiring substrate does not extend beyond the flat sheet-like thin plate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 2, 2012
From: ISHIKIDA, MASAYUKI
To: SONY CORPORATION
Reel/Frame 028140/0875 →
Priority Claims (1)
JP 2011-105993 · May 11, 2011 · national
Continuity (1)
Related Publication 20120286384A1 · Nov 15, 2012