Method of lift-off patterning thin films in situ employing phase change resists

1. Method for making a patterned thin film of an organic semiconductor for use in an electrical device structure comprising:

condensing a resist gas into a solid film onto a substrate selected from the group consisting of glass, metal foil, polymer foil or ceramic cooled to a temperature below the condensation point of the resist gas;

compressing the resist subsequent to condensation by application of force to achieve a selected density;

selectively heating by laser light, resistive heating or by thermal contact with raised features on a stamp the condensed solid film to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film with feature dimensions of five micrometers or larger;

coating an organic semiconductor film on the patterned resist film; and

heating the patterned resist film to cause it to sublime away and to lift off because of the phase change.

2. Method for making a patterned organic film that can be used in a light-emitting diode (OLED) comprising:

condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas;

compressing the resist subsequent to condensation by application of force to achieve a selected density;

selectively heating by laser light, resistive heating or by thermal contact with raised features on a stamp the condensed solid film to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film with feature dimensions of five micrometers or larger;

coating an organic film that can be part of a light-emitting diode on the patterned resist film; and

heating the patterned resist film to cause it to sublime away and to lift off because of the phase change.

3. The method of claim 1 or claim 2 wherein the resist gas is selected from the group consisting of carbon dioxide, nitrous oxide, argon, xenon, hydrogen chloride, acetylene, hexafluorethane, butane, ethanol, ammonia, sulfur dioxide, isobutane, ethylene, chloroform, formic acid, iodine, and uranium hexafluoride.

4. The method of claim 1 or claim 2 wherein condensation rate is monitored.

5. The method of claim 1 or claim 2 wherein heating the condensed solid film is achieved by joule heating of resistive elements.

6. The method of claim 1 or claim 2 wherein heating is achieved by optical patterning.

7. The method of claim 1 or claim 2 wherein the resist gas is carbon dioxide and is patterned by a laser operating at 225, 2700 or 4300 nanometers.

8. The method of claim 1 or claim 2 further including an optically dense guest material doped into the resist film during condensation.

9. The method of claim 1 or claim 2 wherein resist patterning is performed in vacuo or in an inert gas or gases.

10. The method of claim 1 or claim 2 used for making OLED materials.

11. The method of claim 1 or claim 2 wherein resist lift-off is effected by increasing the temperature of the condensate resist across its sublimation point in pressure-temperature space.

12. The method of claim 1 or claim 2 wherein the lift-off is effected by a thermal shock.

13. The method of claim 1 or claim 2 wherein two condensate resist gases are used for film patterning, the thermal expansion coefficients of the two gases differing by at least 5%.

14. The method of claim 1 or claim 2 wherein the substrate is cooled to a temperature below the condensation point of the resist gas.

15. The method of claim 4 wherein the substrate is cooled by thermal conduction.

16. The method of claim 1 wherein the heating is achieved with a patterned stamp such as a roller.

17. The method of claim 16 wherein the stamp is patterned by chemical etching, mechanical scribing or direct laser ablation.