Integrated circuit and method for fabricating the same having a replacement gate structure

1. A method of fabricating an integrated circuit, comprising:

providing a semiconductor substrate having a first trench and a second trench, each of the first and second trenches being defined by sidewall spacers and a silicon material at the semiconductor substrate;

depositing a layer of a high-k dielectric material within both the first and second trenches including along and in contact with an entirety of exposed vertical walls of the sidewall spacers;

forming a sacrificial material layer within an entirety of only the second trench and not within the first trench and in contact with the high-k dielectric material in the second trench;

depositing a layer of a work function shifter material in the first trench over and in contact with the high-k dielectric material to form an overlapping region in the first trench, wherein the workfunction shifter material comprises an oxide of a metallic element, and wherein the entirety of the second trench remains filled by the sacrificial material and thus no work function shifter material is deposited in the second trench;

heat treating the layer of the high-k dielectric material and the layer of the work function shifter material so as to form a transformed dielectric material via thermal diffusion that is a combination of the high-k dielectric material and work function shifter material in the overlapping region within the first trench, wherein the transformed dielectric material comprises an oxide of two metallic elements in combination;

removing an entirety of the sacrificial material from within the second trench so as to re-expose the high-k dielectric material therein; and

depositing a layer of a first replacement gate fill material into the first trench and over and in contact with the transformed dielectric material and into the second trench and over and in contact with the high-k dielectric material.

2. The method of claim 1 , wherein depositing the layer of the high-k dielectric material comprises depositing a layer of a hafnium oxide.

3. The method of claim 1 , wherein depositing the layer of the first replacement gate fill material comprises depositing a layer of a tungsten nitride.

4. The method of claim 3 , further comprising etching a portion of the first replacement gate fill material to re-expose a portion of both the first and second trenches and depositing a layer of a second replacement gate fill material over the layer of the first replacement gate fill material.

5. The method of claim 4 , wherein depositing the layer of the second replacement gate fill material comprises depositing a layer of tungsten.

6. The method of claim 1 , wherein depositing the layer of the work function shifter material consists of depositing a layer consisting of lanthanum oxide.

7. The method of claim 6 , wherein forming the transformed dielectric material consists of forming hafnium lanthanum oxide.

8. The method of claim 1 , wherein depositing the layer of the work function shifter material consists of depositing a layer consisting of aluminum oxide.

9. The method of claim 8 , wherein forming the transformed dielectric material consists of forming hafnium aluminum oxide.

10. A method of fabricating an integrated circuit, comprising:

providing a semiconductor substrate having a first trench and a second trench, each of the first and second trenches being defined by sidewall spacers and a silicon material at the semiconductor substrate;

depositing, by conformal deposition, a layer consisting of a hafnium oxide, high-k dielectric material within both the first and second trenches including along and in contact with an entirety of the exposed vertical walls of the sidewall spacers;

forming, by patterning and etching, a sacrificial material layer within an entirety of only the second trench and in contact with the high-k dielectric material in the second trench and not within the first trench;

depositing, by conformal deposition, a layer of a work function shifter material consisting of either aluminum oxide or lanthanum oxide in the first trench over and in contact with the high-k dielectric material to form an overlapping region in the first trench, wherein the entirety of the second trench remains filled by the sacrificial material and thus no work function shifter material is deposited in the second trench;

heat treating the layer of the high-k dielectric material and the layer of the work function shifter material so as to form a transformed dielectric material via thermal diffusion that is a combination of the high-k dielectric material and work function shifter material, thus consisting of either hafnium aluminum oxide or hafnium lanthanum oxide, in the overlapping region within the first trench;

removing an entirety of the sacrificial material from within the second trench so as to re-expose the high-k dielectric material therein;

depositing a layer of a first replacement gate electrode fill material comprising tungsten nitride into the first trench and over and in contact with the transformed dielectric material to fill an entirety of the first trench and into the second trench and over and in contact with the high-k dielectric material to fill an entirety of the second trench; and

etching a portion of the first replacement gate electrode fill material to re-expose a portion of both the first and second trenches and depositing a layer of a second replacement gate electrode fill material comprising tungsten over and in contact with the layer of the first replacement gate electrode fill material.

11. A method of fabricating an integrated circuit, comprising:

providing a semiconductor substrate having a first trench and a second trench;

depositing a layer of a high-k dielectric material within both the first and second trenches including along vertical walls of the first and second trenches;

forming a sacrificial material layer within only the second trench and not within the first trench;

depositing a layer of a work function shifter material in the first trench over the high-k dielectric material to form an overlapping region in the first trench, wherein the workfunction shifter material comprises an oxide of a metallic element, and wherein the sacrificial material layer remains in the second trench and thus no work function shifter material is deposited in contact with the layer of the high-k dielectric material in the second trench;

heat treating the layer of the high-k dielectric material and the layer of the work function shifter material so as to form a transformed dielectric material via thermal diffusion that is a combination of the high-k dielectric material and work function shifter material in the overlapping region within the first trench; and

depositing a layer of a replacement gate electrode material into the first trench and over and in contact with the transformed dielectric material and into the second trench and over and in contact with the high-k dielectric material.