Method of forming patterns using block copolymers and articles thereof

1. A method for patterning a layered structure, comprising:

forming a photoimageable layer on a horizontal surface of an underlying substrate;

imaging the photoimageable layer to form an imaged pattern in the photoimageable layer;

developing the imaged pattern to remove portions of the photoimageable layer to form a prepattern layer comprising unremoved portions of the photoimageable layer;

depositing an inorganic material layer on the unremoved portions of the photoimageable layer;

etching the inorganic material layer to expose the unremoved portions of the photoimageable layer;

removing the unremoved portions of the photoimageable layer to provide the plurality of spaced apart inorganic material guides;

treating the spaced apart inorganic material guides with a surface modifying material that attracts the first polymer block or repels the second polymer block of the block copolymer;

casting a layer of a block copolymer between the spaced apart inorganic guides, the block copolymer having a χN parameter equal to or greater than about 10.5 and comprising a first polymer block and a second polymer block, wherein the first and second polymer blocks have an etch selectivity greater than 2 under a first set of etching conditions;

annealing the layer of the block copolymer to form a plurality of cylindrical systems that are generally parallel to the horizontal surface of the substrate;

forming a pattern by selectively removing at least a portion of the first polymer block of the block copolymer under the first set of etching conditions to provide laterally-separated features comprising the second polymer block of the block copolymer and the plurality of spaced apart inorganic guides; and

transferring the pattern to the underlying substrate.

2. The method of claim 1 , wherein the surface modifying material is an organic polymer, having etch resistance properties substantially similar to the first polymer block of the block copolymer.

3. The method of claim 1 , wherein the first polymer block comprises polystyrene, and wherein the organic polymer is a hydroxyl-terminated polystyrene.

4. The method of claim 1 , wherein the first polymer block comprises an organic polymer and the second polymer block comprises an organometallic-containing polymer.

5. The method of claim 1 , wherein the second polymer block comprises silicon and/or iron.

6. The method of claim 1 , wherein the second polymer block comprises polydimethylsiloxane.

7. The method of claim 1 , wherein the block copolymer comprises a polystyrene-polydimethylsiloxane copolymer.

8. The method of claim 1 , wherein depositing the inorganic material layer comprises performing an atomic layer deposition of silicon oxide.

9. The method of claim 1 , wherein the forming the pattern comprises performing a plasma etching process.

10. The method of claim 1 , wherein the forming a photoimageable layer on a substrate comprises forming a 248 nm resist, a 193 nm resist, a 193 nm immersion resist, or an EUV resist, or a combination of two or more thereof.

11. The method of claim 1 , wherein the annealing the layer of the block copolymer comprises heating to an annealing temperature greater than about 200° C. in a low oxygen atmosphere comprising less than about 50 ppm oxygen.

12. The method of claim 1 , wherein the annealing the layer of the block copolymer comprises a solvent anneal process.

13. The method of claim 1 , wherein the plurality of spaced apart inorganic material guides have a pitch of about 100 nm or less.

14. The method of claim 1 , further comprising controlling the forming the pattern step by modifying a thickness of the inorganic layer, modifying a molecular weight of the second polymer block, or a combination thereof.

15. The method of claim 1 , wherein the plurality of spaced apart inorganic material guides have a pitch of about 100 nm or less.