Protecting element having first and second high concentration impurity regions separated by insulating region
View Patent ↗With a microwave FET, an incorporated Schottky junction capacitance or PN junction capacitance is small and such a junction is weak against static electricity. However, with a microwave device, the method of connecting a protecting diode cannot be used since this method increases the parasitic capacitance and causes degradation of the high-frequency characteristics. In order to solve the above problems, a protecting element, having a first n + -type region-insulating region-second n + -type region arrangement is connected in parallel between two terminals of a protected element having a PN junction, Schottky junction, or capacitor. Since discharge can be performed between the first and second n + regions that are adjacent each other, electrostatic energy that would reach the operating region of an FET can be attenuated without increasing the parasitic capacitance.
1. A protecting element comprising:
a first high concentration impurity region formed in an insulating region of a substrate and connected to a first terminal of an element formed in the substrate; and
a second high concentration impurity region formed in the insulating region and connected to a second terminal of the element, the first and second high concentration impurity regions facing each other with a portion of the insulating region disposed therebetween,
wherein upon discharging of electrostatic energy applied between the first and second terminals a current path is formed in the insulating region,
a width of the first high concentration impurity region is 5 μm or smaller such that the current path is formed from an outer side surface of the first high concentration impurity region to the second high concentration impurity region, the outer side surface of the first high concentration impurity region being opposite from an inner side surface of the first high concentration impurity region that faces the portion of the insulating region, and
a distance between a bottom surface of the first high concentration impurity region and a bottom surface of the insulating region is 20 μm or larger.
2. The protecting element of claim 1 , wherein a width of the second high concentration impurity region is configured so that upon the discharging of the electrostatic energy applied between the first and second terminals the current path from the outer side surface of the first high concentration impurity region reaches an outer side surface of the second high concentration impurity region, the outer side surface of the second high concentration impurity region being opposite from an inner side surface of the second high concentration impurity region that faces the portion of the insulating region.
3. The protecting element of claim 2 , wherein the width of the first high concentration impurity region and the width of the second high concentration impurity region are 5 μm or smaller.
4. The protecting element according to claim 1 , wherein a separation of the first and second high concentration impurity regions is 10 μm or smaller.
5. The protecting element according to claim 1 , wherein a separation of the first and second high concentration impurity regions is 4 μm or larger.
6. The protecting element according to claim 1 , wherein an impurity concentration of the insulating region is 1×10 14 cm −3 or lower.
7. The protecting element according to claim 1 , wherein a volume resistivity of the insulating region is 1×10 3 Ωcm or higher.
8. The protecting element according to claim 1 , wherein the insulating region is configured to provide an additional current path upon the discharging between the inner side surface of the first high concentration impurity region and an inner side surface of the second high concentration impurity region and between bottom surfaces of the first and second high concentration impurity regions.
9. The protecting element of claim 8 , wherein the current path has a higher conductivity modulation than the additional current path.
10. The protecting element of claim 8 , wherein a current running through the current path upon the discharging is greater than a current running through the additional current path upon the discharging.
11. The protecting element of claim 1 , wherein the insulating region extends, in plan view of the protecting element, from the first high concentration impurity region by at least 10 μm in a direction perpendicular to the outer side surface of the first high concentration impurity region and away from the first high concentration impurity region.
12. The protecting element of claim 1 , wherein the current path expands when the electrostatic energy applied between the first and second terminals becomes larger.
13. The protecting element of claim 1 , wherein a capacitance between the first and second high concentration impurity regions is 40 fF or smaller.
14. The protecting element of claim 1 , wherein the element comprises a PN junction or a Schottky junction, and in the insulating region extends, in plan view of the protecting element, from the first high concentration impurity region by at least 10 μm in a direction perpendicular to the outer side surface of the first high concentration impurity region and away from the first high concentration impurity region.
15. The protecting element of claim 1 , wherein the first high concentration impurity region is connected to a first electrode of a capacitor, the second high concentration impurity region is connected to a second electrode of the capacitor, and in the insulating region extends, in plan view of the protecting element, from the first high concentration impurity region by at least 10 μm in a direction perpendicular to the outer side surface of the first high concentration impurity region and away from the first high concentration impurity region.