Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same

1. A material for forming a passivation film for a semiconductor substrate, the material comprising a polymer compound having an anionic group or a cationic group, wherein the anionic group comprises at least one selected from the group consisting of a sulfonic acid group, a phosphoric acid group, and a phosphonic acid group.

2. The material for forming a passivation film for a semiconductor substrate according to claim 1 , wherein the polymer compound has a main chain formed from carbon and at least one element selected from the group consisting of hydrogen, fluorine, oxygen and sulfur.

3. The material for forming a passivation film for a semiconductor substrate according to claim 1 , wherein the polymer compound has a main chain formed from carbon and at least one element selected from the group consisting of hydrogen, oxygen and sulfur.

4. The material for forming a passivation film for a semiconductor substrate according to claim 1 , wherein the polymer compound has an aromatic group.

5. The material for forming a passivation film for a semiconductor substrate according to claim 1 , wherein the polymer compound has a main chain formed from carbon and fluorine.

6. The material for forming a passivation film for a semiconductor substrate according to claim 1 , wherein the polymer compound has a conductivity of 1 mS/cm or more in water at 25° C.

7. The material for forming a passivation film for a semiconductor substrate according to claim 1 , wherein the polymer compound has a sulfonic acid group.

8. The material for forming a passivation film for a semiconductor substrate according to claim 1 , further comprising a liquid medium.

9. The material for forming a passivation film for a semiconductor substrate according to claim 8 , wherein the liquid medium comprises at least one selected from the group consisting of methanol, ethanol, 1-propanol and 2-propanol.

10. A passivation film for a semiconductor substrate that is a coating film formed on a semiconductor substrate from the material for forming a passivation film for a semiconductor substrate according to claim 1 .

11. A photovoltaic cell element comprising a semiconductor substrate having a pn junction, an electrode, and the passivation film for a semiconductor substrate according to claim 10 , wherein the passivation film is formed on the semiconductor substrate.

12. A method of producing a photovoltaic cell element, the method comprising forming the passivation film for a semiconductor substrate according to claim 10 on a semiconductor substrate that has a pn junction and has an electrode formed thereon.

13. A method of producing a passivation film for a semiconductor substrate, the method comprising:

forming a coating layer by applying the material for forming a passivation film for a semiconductor substrate according to claim 1 onto a semiconductor substrate; and

forming a coating film by drying the coating layer.

14. The method of producing a passivation film for a semiconductor substrate according to claim 13 , further comprising applying hydrofluoric acid to the semiconductor substrate prior to the formation of the coating layer.

15. A material for forming a passivation film for a semiconductor substrate, the material comprising a polymer compound having an anionic group or a cationic group, wherein the polymer compound is at least one selected from the group consisting of a polyperfluoroolefin sulfonic acid derivative, a sulfonated polystyrene derivative and a sulfonated polyarylethersulfone.

16. A method of producing a passivation film for a semiconductor substrate, the method comprising:

forming a coating layer by applying the material for forming a passivation film for a semiconductor substrate according to claim 15 onto a semiconductor substrate; and

forming a coating film by drying the coating layer.

17. The method of producing a passivation film for a semiconductor substrate according to claim 16 , further comprising applying hydrofluoric acid to the semiconductor substrate prior to the formation of the coating layer.

18. A method of producing a photovoltaic cell element, the method comprising forming a passivation film for a semiconductor substrate on a semiconductor substrate that has a pn junction and has an electrode formed thereon, wherein the passivation film is a coating film formed on a semiconductor substrate from the material for forming a passivation film for a semiconductor substrate according to claim 15 .

19. A material for forming a passivation film for a semiconductor substrate, the material comprising a polymer compound having an anionic group or a cationic group, further comprising a filler.

20. The material for forming a passivation film for a semiconductor substrate according to claim 19 , wherein the filler comprises an inorganic filler.

21. The material for forming a passivation film for a semiconductor substrate according to claim 20 , wherein the inorganic filler comprises at least one selected from the group consisting of Al 2 O 3 , SiO 2 , ZrO 2 , TiO 2 , SiC, MgO, zeolite, AlN and BN.

22. The material for forming a passivation film for a semiconductor substrate according to claim 20 , wherein the inorganic filler comprises SiO 2 .

23. The material for forming a passivation film for a semiconductor substrate according to claim 19 , wherein the filler has a weight-average particle size (50% D) of from 10 nm to 30 μm.

24. The material for forming a passivation film for a semiconductor substrate according to claim 19 , wherein a content of the filler with respect to a total content of the polymer compound is from 0.1% by mass to 200% by mass.

25. A material for forming a passivation film for a semiconductor substrate, the material comprising a polymer compound having an anionic group or a cationic group, further comprising a metal alkoxide.

26. The material for forming a passivation film for a semiconductor substrate according to claim 25 , wherein the metal alkoxide comprises a silicon alkoxide.

27. The material for forming a passivation film for a semiconductor substrate according to claim 25 , further comprising at least one acidic compound.

28. The material for forming a passivation film for a semiconductor substrate according to claim 25 , wherein a content of the metal alkoxide with respect to a total content of the polymer compound is from 0.1% by mass to 200% by mass.

29. A method of producing a passivation film for a semiconductor substrate, the method comprising:

forming a coating layer by applying the material for forming a passivation film for a semiconductor substrate according to claim 25 onto a semiconductor substrate; and

forming a coating film by drying the coating layer.

30. The method of producing a passivation film for a semiconductor substrate according to claim 29 , further comprising applying hydrofluoric acid to the semiconductor substrate prior to the formation of the coating layer.

31. A method of producing a photovoltaic cell element, the method comprising forming a passivation film for a semiconductor substrate on a semiconductor substrate that has a pn junction and has an electrode formed thereon, wherein the passivation film is a coating film formed on a semiconductor substrate from the material for forming a passivation film for a semiconductor substrate according to claim 25 .