IP Library Granted Patent US 8,809,801
Granted Patent B2
US 8,809,801 · App. 13/501,561 · Granted Aug 19, 2014

Gas field ionization ion source and ion beam device

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Quick Facts
Patent No.
US 8,809,801
App. No.
13/501,561
Granted
Aug 19, 2014
Kind
B2
Abstract

Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode ( 1 ) and the temperature of a gas injection port part ( 3 ) of a gas supply unit.

Claims (33)

1. A gas field ionization source, comprising:

an electrode unit including an emitter electrode and an extraction electrode;

a gas supply unit configured to supply a gas to near a tip end of the emitter electrode through a gas injection port part of the gas supply unit;

a voltage application unit configured to apply a voltage between the emitter electrode and the extraction electrode to form an electrical field for ionizing the gas;

and a temperature controller configured to control a temperature of the tip end of the emitter electrode and a temperature of the gas injection port part of the gas supply unit independently,

wherein the gas injection port part is kept at a higher temperature than the tip end of the emitter electrode during ion emission,

and wherein the temperature of the gas infection port part is controlled variable depending on the boiling temperature of the gas.

2. The gas field ionization ion source according to claim 1 , wherein the temperature controller includes:

a cooling unit configured to simultaneously cool the tip end of the emitter electrode and the gas injection port part of the gas supply unit; and

a heating unit configured to heat the gas injection port part of the gas supply unit.

3. An ion beam device, comprising:

a gas field ionization ion source according to claim 1 ;

a sample stage configured to hold a sample;

a lens system configured to converge an ion beam emitted from the gas field ionization ion source and project the ion beam onto the sample;

a deflection system configured to deflect the ion beam to change an irradiation position of the ion beam on the sample;

a secondary particle detector configured to detect secondary particles emitted from the sample;

an image processing unit configured to form an observation image of the sample using a result of detection by the secondary particle detector; and

a controller configured to control the lens system and the deflection system to adjust the irradiation position of the ion beam.

4. The gas field ionization ion source according to claim 1 ,

wherein the gas supply unit is configured to supply a gas mixture mainly containing gases of plural elements, and

the gas field ionization ion source further comprises:

an extraction limiting diaphragm having an aperture configured to allow passage of an ion beam emitted from the emitter electrode; and

a first storage configured to store data indicating a correspondence between a type of ions emitted from the emitter electrode and a voltage value applied by the voltage application unit during the emission.

5. An ion beam device, comprising:

the gas field ionization ion source according to claim 4 ;

a sample stage configured to hold a sample;

a lens system configured to converge an ion beam emitted from the gas field ionization ion source and project the ion beam onto the sample;

a deflection system configured to deflect the ion beam to change an irradiation position of the ion beam on the sample;

a secondary particle detector configured to detect secondary particles emitted from the sample;

an image processing unit configured to form an observation image of the sample using a result of detection by the secondary particle detector; and

a controller configured to control the lens system and the deflection system to adjust the irradiation position of the ion beam.

6. The ion beam device according to claim 5 ,

wherein the image processing unit is configured to form observation images corresponding to at least two species of ions emitted from the emitter electrode, generate a new secondary particle image obtained by comparison calculation for the observation images, and display the new secondary particle image.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 18, 2012
From: KAWANAMI, YOSHIMI; ISHITANI, TOHRU
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 028063/0545 →