IP Library Granted Patent US 9,116,584
Granted Patent B2
US 9,116,584 · App. 13/556,805 · Granted Aug 25, 2015

Dielectric layer for touch sensor stack

Inventors: David Brent Guard (Southampton, GB); Matthew Trend (Fareham, GB)
Assignee: Atmel Corporation
G06F3/044G06F2203/04103
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Quick Facts
Patent No.
US 9,116,584
App. No.
13/556,805
Granted
Aug 25, 2015
Kind
B2
Abstract

In one embodiment, a touch sensor includes a substrate comprising a first surface. The touch sensor further includes a plurality of first electrodes comprising one or more conductive materials on the first surface. The touch sensor further includes a dielectric layer formed over the first electrodes and at least a portion of the first surface. The dielectric layer has a dielectric constant less than or equal to approximately 3.

Claims (37)

1. A touch sensor comprising:

a substrate comprising a first surface configured to face toward an electronic display panel when coupled to the electronic display panel;

a plurality of first electrodes comprising one or more conductive materials on the first surface; and

a dielectric layer formed over the first electrodes and at least a portion of the first surface, the dielectric layer having a dielectric constant less than or equal to approximately 3 and being configured to face toward the electronic display panel when coupled to the electronic display panel.

2. The touch sensor of claim 1 , wherein the dielectric layer is configured to face the electronic display panel with an air gap between the dielectric layer and the electronic display panel.

3. The touch sensor of claim 1 , wherein the dielectric layer is in at least indirect contact with an electronic display panel.

4. The touch sensor of claim 1 , wherein there is no adhesive layer between the dielectric layer and the first electrodes.

5. The touch sensor of claim 1 , further comprising:

a plurality of second electrodes comprising one or more conductive materials on a second surface of the first substrate or a second substrate;

a second dielectric layer formed on the second electrodes and at least a portion of the second surface; and

a substantially transparent cover panel disposed on the dielectric layer.

6. The touch sensor of claim 1 , wherein the conductive materials comprise indium tin oxide, a plurality of fine lines of metal, or a plurality of carbon nanotubes.

7. The touch sensor of claim 1 , wherein the dielectric constant of the dielectric layer is less than approximately 2 and greater than approximately 1.

8. The touch sensor of claim 1 , wherein the dielectric constant of the dielectric layer is less than approximately 3 and greater than approximately 2.

9. A device comprising:

a touch sensor comprising:

a substrate comprising a first surface configured to face toward an electronic display panel when coupled to the electronic display panel;

a plurality of first electrodes comprising one or more conductive materials on the first surface; and

a dielectric layer formed over the first electrodes and at least a portion of the first surface, the dielectric layer having a dielectric constant less than or equal to approximately 3 and being configured to face toward the electronic display panel when coupled to the electronic display panel; and

one or more computer-readable non-transitory storage media coupled to the touch sensor and embodying logic that is configured when executed to control the touch sensor.

10. The device of claim 9 , wherein the dielectric layer is configured to face the electronic display panel with an air gap between the dielectric layer and the electronic display panel.

11. The device of claim 9 , wherein the dielectric layer is in at least indirect contact with an electronic display panel.

12. The device of claim 9 , wherein there is no adhesive layer between the dielectric layer and the first electrodes.

13. The device of claim 9 , wherein the touch sensor further comprises:

a plurality of second electrodes comprising one or more conductive materials on a second surface of the first substrate or a second substrate;

a second dielectric layer formed on the second electrodes and at least a portion of the second surface; and

a substantially transparent cover panel disposed on the dielectric layer.

14. The device of claim 9 , wherein the conductive materials comprise indium tin oxide, a plurality of fine lines of metal, or a plurality of carbon nanotubes.

15. The device of claim 9 , wherein the dielectric constant of the dielectric layer is less than approximately 2 and greater than approximately 1.

16. The device of claim 9 , wherein the dielectric constant of the dielectric layer is less than approximately 3 and greater than approximately 2.

17. A method for forming a touch sensor, the method comprising:

providing a substrate comprising a first surface configured to face toward an electronic display panel when coupled to the electronic display panel;

forming a plurality of first electrodes comprising one or more conductive materials on the first surface; and

forming a dielectric layer on the first electrodes and at least a portion of the first surface, the dielectric layer having a dielectric constant less than or equal to approximately 3 and being configured to face toward the electronic display panel when coupled to the electronic display panel.

18. The method of claim 17 , further comprising attaching the electronic display panel to the substrate such that the electronic display panel faces the dielectric layer, with an air gap disposed between the dielectric layer and the electronic display panel.

19. The method of claim 17 , further comprising attaching an electronic display panel to the substrate such that the dielectric layer is in at least indirect contact with the electronic display panel.

20. The method of claim 17 , wherein the dielectric constant of the dielectric layer is less than approximately 2 and greater than approximately 1.

Assignments (13)
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0001 →
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: ATMEL CORPORATION
Reel/Frame 059262/0105 →
RELEASE OF SECURITY INTEREST Recorded Feb 25, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059333/0222 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 31, 2019
From: MICROCHIP TECHNOLOGY INCORPORATED; AMTEL CORPORATION
To: SOLAS OLED LIMITED
Reel/Frame 048201/0225 →
RELEASE OF SECURITY INTEREST IN CERTAIN PATENT RIGHTS Recorded Dec 21, 2018
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; ATMEL CORPORATION
Reel/Frame 047976/0884 →
RELEASE OF SECURITY INTEREST IN CERTAIN PATENT RIGHTS Recorded Dec 21, 2018
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; ATMEL CORPORATION
Reel/Frame 047976/0937 →
SECURITY INTEREST Recorded Sep 18, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 047103/0206 →
SECURITY INTEREST Recorded Jun 25, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046426/0001 →
SECURITY INTEREST Recorded Feb 10, 2017
From: ATMEL CORPORATION
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 041715/0747 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT COLLATERAL Recorded Apr 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: ATMEL CORPORATION
Reel/Frame 038376/0001 →
PATENT SECURITY AGREEMENT Recorded Jan 3, 2014
From: ATMEL CORPORATION
To: MORGAN STANLEY SENIOR FUNDING, INC. AS ADMINISTRATIVE AGENT
Reel/Frame 031912/0173 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 9, 2012
From: ATMEL TECHNOLOGIES U.K. LIMITED
To: ATMEL CORPORATION
Reel/Frame 028755/0811 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 24, 2012
From: GUARD, DAVID BRENT; TREND, MATTHEW
To: ATMEL TECHNOLOGIES U.K. LIMITED
Reel/Frame 028626/0147 →
Continuity (1)
Related Publication 20140028569A1 · Jan 30, 2014