Chemical mechanical polishing pad having a low defect window

1. A method for chemical mechanical polishing of a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate; comprising:

providing a chemical mechanical polishing apparatus having a platen;

providing at least one substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate;

selecting a chemical mechanical polishing pad having a polishing layer having a polishing surface and an integral window; wherein the integral window is a polyurethane reaction product of a curative agent and an isocyanate-terminated prepolymer polyol; wherein the curative agent is selected from the group consisting of 4,4′-methylene-bis-o-chloroaniline; 4,4′-methylene-bis-(3-chloro-2,6-diethylaniline); dimethylthiotoluenediamine; trimethyleneglycol di-p-aminobenzoate; polytetramethyleneoxide di-p-aminobenzoate; polytetramethyleneoxide mono-p-aminobenzoate; polypropyleneoxide di-p-aminobenzoate; polypropyleneoxide mono-p-aminobenzoate; 1,2-bis(2-aminophenylthio)ethane; 4,4′-methylene-bis-aniline; diethyltoluenediamine; 5-tert-butyl-2,4-toluenediamine; 3-tert-butyl-2,6-toluenediamine; 5-tert-amyl-2,4-toluenediamine; 3-tert-amyl-2,6-toluenediamine; chlorotoluenediamine and mixtures thereof; wherein the isocyanate-terminated prepolymer polyol is a reaction product of a polyol and a polyfunctional aromatic isocyanate; wherein the polyol is selected from the group consisting of polytetramethylene ether glycol, polypropylene ether glycol, an ester-based polyol, a copolymer thereof and a mixture thereof; wherein the polyfunctional aromatic isocyanate is selected from the group consisting of 2,4-toluene diisocyanate; 2,6-toluene diisocyanate; 4,4′-diphenylmethane diisocyanate; naphthalene-1,5-diisocyanate; toluidine diisocyanate; para-phenylene diisocyanate; xylylene diisocyanate; and, mixtures thereof; wherein the curative agent contains curative amine moieties that react with the unreacted NCO moieties contained in the isocyanate-terminated prepolymer polyol to form the integral window; wherein the curative agent and the isocyanate-terminated prepolymer polyol are provided at an amine moiety to unreacted NCO moiety stoichiometric ratio of 100 to 125%; wherein the integral window has a porosity of <0.1 vol %; wherein the integral window exhibits an average compression set of 5 to 25%; and, wherein the polishing surface is adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate;

installing onto the platen the chemical mechanical polishing pad; and,

polishing the at least one substrate with the polishing surface of the polishing layer.

2. The method of claim 1 , wherein the integral window bulges outward ≦50 μm from the polishing layer at the polishing surface after five hours of substrate polishing.

3. The method of claim 1 , wherein the substrate is a semiconductor substrate.

4. The method of claim 1 , wherein the integral window is selected to have an oval cross section in a plane parallel to the polishing surface.

5. The method of claim 1 , wherein the isocyanate-terminated prepolymer polyol comprises an isocyanate-terminated polytetramethylene ether glycol.

6. The method of claim 1 , wherein the isocyanate-terminated prepolymer polyol contains 8.75 to 9.40 wt % unreacted NCO moieties.

7. The method of claim 6 , wherein the isocyanate-terminated polytetramethylene ether glycol contains 9.00 to 9.25 wt % unreacted NCO moieties.

8. The method of claim 1 , wherein the integral window exhibits an optical transmission of 20 to 50% at 670 nm.