Phase shift mask for extreme ultraviolet lithography and method of fabricating same
A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag 2 O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag 2 O absorber layer. The tantalum-containing absorber layer is disposed over the Ag 2 O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag 2 O absorber layer adjacent to the mask image region.
1. A mask comprising:
a substrate;
a reflective multilayer coating disposed over the substrate;
an Ag 2 O absorber layer disposed over the reflective multilayer coating; and
a tantalum-containing absorber layer disposed over the Ag 2 O absorber layer adjacent to a mask image region.
2. The mask of claim 1 wherein the tantalum-containing absorber layer is a TaBN layer.
3. The mask of claim 1 wherein the substrate includes a low thermal expansion material (LTEM).
4. The mask of claim 1 further including a ruthenium-containing buffer layer disposed between the reflective multilayer coating and the Ag 2 O absorber layer.
5. The mask of claim 4 further including a silicon-containing capping layer disposed between the reflective multilayer coating and the ruthenium-containing buffer layer.
6. The mask of claim 5 , further including a conductive layer disposed over the substrate, wherein the reflective multilayer coating is disposed over a first surface of the substrate and the conductive layer is disposed over a second surface of the substrate, the second surface being opposite the first surface.
7. A phase shift mask comprising:
a low thermal expansion material (LTEM) substrate;
a reflective multilayer coating disposed over the LTEM substrate; and
an absorptive stack disposed over the reflective multilayer coating, wherein the absorptive stack includes:
an Ag 2 O absorber layer disposed over the reflective multilayer coating in a mask image region and a mask frame region, and
a tantalum-containing absorber layer disposed over the Ag 2 O absorber layer in the mask frame region.
8. The phase shift mask of claim 7 wherein the tantalum-containing absorber layer is a TaBN layer.
9. The mask of claim 7 wherein the tantalum-containing absorber layer is disposed in a mask black border region of the mask frame region, wherein the mask black border region is adjacent to the mask image region.
10. The mask of claim 1 , wherein the Ag 2 O absorber layer is disposed in the mask image region and adjacent to the mask image region.
11. A method comprising:
forming a reflective multilayer coating over a substrate;
forming a silver-containing absorber layer over the reflective multilayer coating;
forming a tantalum-containing absorber layer over the silver-containing absorber layer;
patterning the silver-containing absorber layer and the tantalum-containing absorber layer in a mask image region and a mask frame region, such that the silver-containing absorber layer defines a pattern in the mask image region and the tantalum-containing absorber layer remains adjacent to the mask image region in the mask frame region, wherein the patterning includes:
a first etch step that includes removing portions of the silver-containing absorber layer and the tantalum-containing absorber layer from the mask image region, and
a second etch step that includes removing remaining portions of the tantalum-containing absorber layer from the mask image region.
12. The method of claim 11 wherein:
forming the silver-containing absorber layer includes forming an Ag 2 O layer; and
forming the tantalum-containing absorber layer includes forming a TaBN layer.
13. The method of claim 11 wherein:
the first etch step includes using a mixture of a chlorine-containing gas and an oxygen-containing gas; and
the second etch step includes using the chlorine-containing gas.
14. The method of claim 13 wherein the chlorine-containing gas is Cl 2 and the oxygen-containing gas is O 2 .
15. The method of claim 11 wherein the first etch step uses a same gas to remove the portions of the silver-containing absorber layer and the tantalum-containing absorber layer from the mask image region.
16. The method of claim 15 wherein the second etch step uses the silver-containing absorber layer as an etch stop.
17. The method of claim 11 further including forming a buffer layer between the reflective multilayer coating and the silver-containing absorber layer, wherein the buffer layer acts as an etch stop during the first etch step and the second etch step.
18. A method comprising:
providing an extreme ultraviolet (EUV) mask having a mask image region and a mask frame region, wherein the mask image region of the EUV mask includes a pattern of an integrated circuit device, and further wherein the EUV mask includes:
a substrate,
a reflective multilayer coating disposed over the substrate, and
an absorptive stack disposed over the reflective multilayer coating, wherein the absorptive stack includes:
an Ag 2 O absorber layer disposed over the reflective multilayer coating in the mask image region and the mask frame region, and
a tantalum-containing absorber layer disposed over the Ag 2 O absorber layer in the mask frame region; and
exposing a wafer to EUV radiation using the EUV mask, wherein the pattern of the mask image region of the EUV mask is transferred to the wafer during the exposing.
19. The method of claim 18 wherein the exposing includes transferring the pattern of the mask image region of the EUV mask to adjacent fields of the wafer.
20. The method of claim 18 wherein the tantalum-containing absorber layer is a TaBN layer.