Polymerizable composition for solder resist, and solder resist pattern formation method

1. A polymerizable composition for a solder resist, comprising an infrared ray shielding material, a polymerization initiator having photosensitivity in a range of UV to visible light, and a polymerizable compound,

wherein the infrared ray shielding material is at least one infrared ray absorbing dye selected from a phthalocyanine dye, a naphthalocyanine dye, a dye represented by the following general formula (I), a dye represented by the following general formula (II), or a dye represented by the following general formula (III):

wherein each of Z 1 and Z 2 independently represents a nonmetal atomic group forming a five- or six-membered nitrogen-containing heterocyclic ring that may be a condensed ring; each of R 1 and R 2 independently represents an alkyl group, an alkenyl group, or an aralkyl group; L is a linking group including a structure in which 5 to 9 methine groups are linked by conjugated double bonds; a and b each are 0 or 1; and X represents a counter anion;

wherein each of R 10 , R 11 , R 12 , R 13 , R 14 , R 15 , R 16 , and R 17 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or a heterocyclic group; one or more pairs of R 10 and R 11 , R 12 and R 13 , R 14 and R 15 , and R 16 and R 17 may be bonded to each other to form a five- or six-membered ring structure; X 1 represents an oxygen atom or —NR 18 ; X 2 represents an oxygen atom or —NR 19 ; X 3 represents an oxygen atom or —NR 20 ; X 4 represents an oxygen atom or —NR 21 ; R 18 , R 19 , R 20 , and R 21 each independently represents a hydrogen atom, a linear or branched alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or a heterocyclic group; one or more pairs of R 18 and R 10 , R 19 and R 11 , R 20 and R 16 , and R 21 and R 17 may be bonded to each other to form a five- or six-membered ring structure; R 22 , R 23 , and R 24 each independently represents a hydrogen atom or a monovalent group; n represents an integer of 1 to 3; m represents an integer from 0 to 6; and when n represents 2 or 3, a plurality of R 22 s, R 23 s, or R 24 s may be the same as or different from each other;

wherein R 30 represents —CONHR 35 , —SO 2 NHR 35 , —NHSO 2 R 35 , —NHCOR 35 , —NHCONHR 35 , a hydrogen atom, a halogen atom, a carboxyl group, or a sulfo group; R 31 represents a hydrogen atom, an alkyl group, —NHSO 2 R 35 , or —NHCOR 35 ; R 35 represents an alkyl group, an aryl group, or a heterocyclic group; R 32 represents a hydrogen atom, an alkyl group, an alkoxy group, a hydroxyl group, an amino group, or a halogen atom; when a plurality of R 32 s are present, they may be the same as or different from each other; n represents an integer from 0 to 3; R 33 and R 34 each independently represent an alkyl group, an aryl group, or an aralkyl group; and one or more pairs of R 33 and R 34 , R 32 and R 33 , and R 32 and R 34 may be bonded to each other to form a five- or six-membered ring structure.

2. The polymerizable composition for a solder resist according to claim 1 , wherein the polymerizable compound is one or more selected from the group consisting of radically polymerizable compounds and cationically polymerizable compounds.

3. The polymerizable composition for a solder resist according to claim 1 , wherein the polymerizable compound is a polyfunctional polymerizable compound having a plurality of polymerizable groups in a molecule thereof.

4. The polymerizable composition for a solder resist according to claim 1 , further comprising a binder polymer.

5. The polymerizable composition for a solder resist according to claim 1 , which has a solid content concentration of from 30% by mass to 80% by mass, and a viscosity of from 10 mPa·s to 3000 mPa·s.

6. The polymerizable composition for a solder resist according to claim 1 , wherein a cured film having a film thickness of 20 μm formed from the composition has a light transmittance of 10% or less at a wavelength of from 800 to 1200 nm.

7. The polymerizable composition for a solder resist according to claim 1 , wherein a cured film having a film thickness of 20 μm formed from the composition has a breakdown voltage of 1 MV/cm or more.

8. A solder resist pattern formation method comprising, in this order: a step of forming a photosensitive layer containing the polymerizable composition for a solder resist according to claim 1 on a substrate;

a step of pattern exposing the photosensitive layer to electron beam, UV light, or visible light to cure an exposed portion; and a step of removing an uncured photosensitive layer by development to form a patterned cured film having an infrared ray shielding property.

9. The polymerizable composition for a solder resist according to claim 1 , wherein the polymerization initiator is an oxime ester compound.

10. A polymerizable composition for a solder resist, comprising an infrared ray shielding material, a polymerization initiator, and a polymerizable compound,

wherein the infrared ray shielding material is at least one infrared ray absorbing dye selected from a phthalocyanine dye, a naphthalocyanine dye, a dye represented by the following general formula (I), a dye represented by the following general formula (II), or a dye represented by the following general formula (III):

wherein each of Z 1 and Z 2 independently represents a nonmetal atomic group forming a five- or six-membered nitrogen-containing heterocyclic ring that may be a condensed ring; each of R 1 and R 2 independently represents an alkyl group, an alkenyl group, or an aralkyl group; L is a linking group including a structure in which 5 to 9 methine groups are linked by conjugated double bonds; a and b each are 0 or 1; and X represents a counter anion;

wherein each of R 10 , R 11 , R 12 , R 13 , R 14 , R 15 , R 16 , and R 17 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or a heterocyclic group; one or more pairs of R 10 and R 11 , R 12 and R 13 , R 14 and R 15 , and R 16 and R 17 may be bonded to each other to form a five- or six-membered ring structure; X 1 represents an oxygen atom or —NR 18 ; X 2 represents an oxygen atom or —NR 19 ; X 3 represents an oxygen atom or —NR 20 ; X 4 represents an oxygen atom or —NR 21 ; R 18 , R 19 , R 20 , and R 21 each independently represents a hydrogen atom, a linear or branched alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or a heterocyclic group; one or more pairs of R 18 and R 10 , R 19 and R 11 , R 20 and R 16 , and R 21 and R 17 may be bonded to each other to form a five- or six-membered ring structure; R 22 , R 23 , and R 24 each independently represents a hydrogen atom or a monovalent group; n represents an integer of 1 to 3; m represents an integer from 0 to 6; and when n represents 2 or 3, a plurality of R 22 s, R 23 s, or R 24 s may be the same as or different from each other;

wherein R 30 represents —CONHR 35 , —SO 2 NHR 35 , —NHSO 2 R 35 , —NHCOR 35 , —NHCONHR 35 , a hydrogen atom, a halogen atom, a carboxyl group, or a sulfo group; R 31 represents a hydrogen atom, an alkyl group, —NHSO 2 R 35 , or —NHCOR 35 ; R 35 represents an alkyl group, an aryl group, or a heterocyclic group; R 32 represents a hydrogen atom, an alkyl group, an alkoxy group, a hydroxyl group, an amino group, or a halogen atom; when a plurality of R 32 s are present, they may be the same as or different from each other; n represents an integer from 0 to 3; R 33 and R 34 each independently represent an alkyl group, an aryl group, or an aralkyl group; and one or more pairs of R 33 and R 34 , R 32 and R 33 , and R 32 and R 34 may be bonded to each other to form a five- or six-membered ring structure;

wherein the polymerization initiator is an oxime ester compound.

11. The polymerizable composition for a solder resist according to claim 10 , wherein the polymerizable compound is one or more selected from the group consisting of radically polymerizable compounds and cationically polymerizable compounds.

12. The polymerizable composition for a solder resist according to claim 10 , wherein the polymerizable compound is a polyfunctional polymerizable compound having a plurality of polymerizable groups in a molecule thereof.

13. The polymerizable composition for a solder resist according to claim 10 , further comprising a binder polymer.

14. The polymerizable composition for a solder resist according to claim 10 , which has a solid content concentration of from 30% by mass to 80% by mass, and a viscosity of from 10 mPa·s to 3000 mPa·s.

15. The polymerizable composition for a solder resist according to claim 10 , wherein a cured film having a film thickness of 20 μm formed from the composition has a light transmittance of 10% or less at a wavelength of from 800 to 1200 nm.

16. The polymerizable composition for a solder resist according to claim 10 , wherein a cured film having a film thickness of 20 μm formed from the composition has a breakdown voltage of 1 MV/cm or more.

17. A solder resist pattern formation method comprising, in this order: a step of forming a photosensitive layer containing the polymerizable composition for a solder resist according to claim 10 on a substrate;

a step of pattern exposing the photosensitive layer to electron beam, UV light, or visible light to cure an exposed portion; and a step of removing an uncured photosensitive layer by development to form a patterned cured film having an infrared ray shielding property.

18. A polymerizable composition for a solder resist, comprising an infrared ray shielding material, a polymerization initiator, and a polymerizable compound,

wherein the infrared ray shielding material is at least one infrared ray absorbing dye selected from a dye represented by the following general formula (II) or a dye represented by the following general formula (III):

wherein each of R 10 , R 11 , R 12 , R 13 , R 14 , R 15 , R 16 , and R 17 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or a heterocyclic group; one or more pairs of R 10 and R 11 , R 12 and R 13 , R 14 and R 15 , and R 16 and R 17 may be bonded to each other to form a five- or six-membered ring structure; X 1 represents an oxygen atom or —NR 18 ; X 2 represents an oxygen atom or —NR 19 ; X 3 represents an oxygen atom or —NR 20 ; X 4 represents an oxygen atom or —NR 21 ; R 18 , R 19 , R 20 , and R 21 each independently represents a hydrogen atom, a linear or branched alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or a heterocyclic group; one or more pairs of R 18 and R 10 , R 19 and R 11 , R 20 and R 16 , and R 21 and R 17 may be bonded to each other to form a five- or six-membered ring structure; R 22 , R 23 , and R 24 each independently represents a hydrogen atom or a monovalent group; n represents an integer of 1 to 3; m represents an integer from 0 to 6; and when n represents 2 or 3, a plurality of R 22 s, R 23 s, or R 24 s may be the same as or different from each other;

wherein R 30 represents —CONHR 35 , —SO 2 NHR 35 , —NHSO 2 R 35 , —NHCOR 35 , —NHCONHR 35 , a hydrogen atom, a halogen atom, a carboxyl group, or a sulfo group; R 31 represents a hydrogen atom, an alkyl group, —NHSO 2 R 35 , or —NHCOR 35 ; R 35 represents an alkyl group, an aryl group, or a heterocyclic group; R 32 represents a hydrogen atom, an alkyl group, an alkoxy group, a hydroxyl group, an amino group, or a halogen atom; when a plurality of R 32 s are present, they may be the same as or different from each other; n represents an integer from 0 to 3; R 33 and R 34 each independently represent an alkyl group, an aryl group, or an aralkyl group; and one or more pairs of R 33 and R 34 , R 32 and R 33 , and R 32 and R 34 may be bonded to each other to form a five- or six-membered ring structure.

19. The polymerizable composition for a solder resist according to claim 18 , wherein the polymerizable compound is one or more selected from the group consisting of radically polymerizable compounds and cationically polymerizable compounds.

20. The polymerizable composition for a solder resist according to claim 18 , wherein the polymerizable compound is a polyfunctional polymerizable compound having a plurality of polymerizable groups in a molecule thereof.

21. The polymerizable composition for a solder resist according to claim 18 , further comprising a binder polymer.

22. The polymerizable composition for a solder resist according to claim 18 , which has a solid content concentration of from 30% by mass to 80% by mass, and a viscosity of from 10 mPa·s to 3000 mPa·s.

23. The polymerizable composition for a solder resist according to claim 18 , wherein a cured film having a film thickness of 20 μm formed from the composition has a light transmittance of 10% or less at a wavelength of from 800 to 1200 nm.

24. The polymerizable composition for a solder resist according to claim 18 , wherein a cured film having a film thickness of 20 μm formed from the composition has a breakdown voltage of 1 MV/cm or more.

25. A solder resist pattern formation method comprising, in this order: a step of forming a photosensitive layer containing the polymerizable composition for a solder resist according to claim 18 on a substrate;

a step of pattern exposing the photosensitive layer to electron beam, UV light, or visible light to cure an exposed portion; and a step of removing an uncured photosensitive layer by development to form a patterned cured film having an infrared ray shielding property.

26. The polymerizable composition for a solder resist according to claim 18 , wherein the polymerization initiator is an oxime ester compound.