IP Library › Granted Patent US 8,748,228
Granted Patent B2
US 8,748,228 · App. 13/588,450 · Granted Jun 10, 2014

Semiconductor packages and methods of forming the same

Inventors: Tongsuk Kim (Hwaseong-si, KR); Jangwoo Lee (Hwasung, KR); Heeseok Lee (Yongin-si, KR); Kyoungsei Choi (Yongin-si, KR)
Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 8,748,228
App. No.
13/588,450
Granted
Jun 10, 2014
Kind
B2
Abstract

A semiconductor package including a package substrate having a chip mounting region and a peripheral region and including a ground layer formed in the peripheral region, first solder balls on the package substrate in the chip mounting region, second solder balls on the ground layer, at least one semiconductor chip stacked on the package substrate in the chip mounting region, and a package cap covering the semiconductor chip and contacting the package substrate in the peripheral region may be provided. The package cap is electrically connected to the second solder balls. Methods of fabricating the semiconductor package are also provided.

Claims (32)

1. A method of fabricating a semiconductor package, the method comprising:

forming a package substrate having a chip mounting region and a peripheral region, the package substrate being formed to include a ground layer on the peripheral region thereof;

forming first solder balls on the package substrate in the chip mounting region;

forming second solder balls on the package substrate in the peripheral region;

mounting a semiconductor chip on the package substrate in the chip mounting region;

forming a thermal interface material layer on at least one of the semiconductor chip and a molding layer; and

mounting a package cap covering the semiconductor chip on the package substrate such that the package cap is electrically connected to the second solder balls, wherein the thermal interface material layer covers the semiconductor chip to contact the package cap.

2. The method of claim 1 , wherein forming the second solder balls includes:

forming a protection layer exposing the ground layer on the package substrate; and

forming the second solder balls on the exposed ground layer,

wherein the forming first solder balls and the forming the second solder balls are simultaneously performed.

3. The method of claim 1 , wherein mounting the semiconductor chip includes:

bonding the semiconductor chip to the first solder balls formed in the chip mounting region; and

forming an under-fill resin layer filling a space between the semiconductor chip and the package substrate.

4. The method of claim 1 , wherein mounting the package cap includes attaching the package cap to the package substrate using an adhesive pattern.

5. The method of claim 1 , wherein mounting the package cap includes installing the package cap including conductive metal.

6. A method of fabricating a semiconductor package, the method comprising:

forming a package substrate having a chip mounting region and a peripheral region, the package substrate being formed to include a ground layer on the peripheral region thereof;

forming a mixture material on the package substrate in a blanket manner, the mixture material including solder particles and adhesive resin;

heating the mixture material to a temperature over a melting point of the solder particles;

mounting a semiconductor chip on the mixture material in the chip mounting region; and

mounting a package cap covering the semiconductor chip on the package substrate such that edges of the package cap are disposed on the mixture material in the peripheral region, wherein mounting the package cap includes installing the package cap including conductive metal.

7. The method of claim 6 , wherein forming the mixture material includes coating adhesive resin having solder particles therein on the package substrate.

8. The method of claim 6 , wherein the mixture material further includes at least one of a reducing agent, a deforming agent and a hardening agent, and the hardening agent includes a silicon type material, a phenol type material, an acid anhydride type material or an amine type material.

9. The method of claim 6 , wherein the mixture material further includes a thermal setting agent, a thermal plastic agent or an ultraviolet curing material.

10. A method of fabricating a semiconductor package, the method comprising:

forming a package substrate having a chip mounting region and a peripheral region, the package substrate being formed to include a ground layer on the peripheral region thereof;

forming a mixture material on the package substrate in a blanket manner, the mixture material including solder particles and adhesive resin;

heating the mixture material to a temperature over a melting point of the solder particles;

mounting a semiconductor chip on the mixture material in the chip mounting region;

mounting a package cap covering the semiconductor chip on the package substrate such that edges of the package cap are disposed on the mixture material in the peripheral region; and

forming a thermal interface material layer on at least one of the semiconductor chip and a molding layer covering the semiconductor chip to contact the package cap.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 17, 2012
From: KIM, TONGSUK; LEE, JANGWOO; LEE, HEESEOK; CHOI, KYOUNGSEI
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 028812/0671 →
Priority Claims (1)
KR 10-2011-0084108 · Aug 23, 2011 · national
Continuity (1)
Related Publication 20130052775A1 · Feb 28, 2013