An image sensor includes a plurality of unit pixels. Each unit pixel has a photo diode for sensing external light to generate photo charges. A transfer transistor is connected to the photo diode for storing the photo charges generated in the photo diode into a floating diffusion region when being turned-on. An amplification transistor amplifies the photo charges stored into the floating diffusion region. A select transistor, connected to the amplification transistor, performs a switching operation. An output line, extended in a column direction, outputs the photo charges in accordance with the switching operation of the select transistor. The photo diode may be formed in such a manner to share the output line with its adjacent photo diode in a horizontal direction, so that the photo charges generated in the photo diode and its adjacent photo diode are outputted through the output line.
1. An image sensor comprising:
a plurality of unit pixels, wherein each unit pixel comprises a photo diode for sensing external light to generate photo charges;
a transfer transistor connected to the photo diode, wherein the transfer transistor is configured to store the photo charges generated in the photo diode into a floating diffusion region when being turned-on;
an amplification transistor, wherein the amplification transistor is configured to amplify the photo charges stored into the floating diffusion region;
a select transistor connected to the amplification transistor, wherein the select transistor is configured to perform a switching operation; and
an output line extending in a column direction, wherein the output line is configured to output the photo charges in accordance with the switching operation of the select transistor,
wherein the photo diode is arranged to share the output line with an adjacent photo diode in a horizontal a direction, so that the photo charges generated in the photo diode and the adjacent photo diode are outputted through the output line.
2. The image sensor of claim 1 comprising a supply voltage line, wherein the supply voltage line is shared between the photo diode and the adjacent photo diodes as a first pair of photo diodes in a horizontal direction and a second pair of photo diodes in a horizontal direction.
3. An image sensor comprising:
a plurality of eight photo diodes configured to generate photo charges, wherein each of said plurality of eight photo diodes has a transfer transistor, wherein said plurality of eight photo diodes comprises a plurality of photo diode pairs, wherein each of said photo diode pairs has a select transistor shared by each of said photo diode pairs;
a first select signal line configured to apply a first select signal to a first select transistor which is commonly used by a first photo diode pair of said photo diode pairs, wherein said first photo diode pair comprises vertically adjacent fourth photo diode and eighth photo diode;
a first output line configured to output photo charges of a second photo diode pair of said photo diode pairs when the first select signal is applied through the first select signal line, wherein said second photo diode pair comprises vertically adjacent first photo diode and sixth photo diode;
a second select signal line configured to apply a second select signal to a second select transistor which is commonly used by a third photo diode pair of said photo diode pairs, wherein said third photo diode pair comprises vertically adjacent first photo diode and fifth photo diode, wherein photo charges of the first photo diode and fifth photo diode are output through the first output line;
a second output line configured to output photo charges of a fourth photo diode pair of said photo diode pairs and said first photo diode pair, wherein said fourth photo diode pair comprises vertically adjacent third photo diode and seventh photo diode, wherein the fourth photo diode pair is configured to commonly use a third select transistor to which the second select signal is provided from the second select signal line, and wherein the first photo diode pair is configured to commonly use a fourth select transistor to which the first select signal is provided from the first select signal line;
a first transfer signal line connected to the transfer transistors of the first photo diode, the second photo diode, the third photo diode, and the fourth photo diode are arranged in a horizontal direction; and
a second transfer signal line connected to the transfer transistors of the fifth photo diode, the sixth photo diode, the seventh photo diode, and the eighth photo diode arranged in a horizontal direction.
4. The image sensor of claim 3 , wherein the first photo diode is configured to output the photo charge through the first output line when a first transfer signal to turn-on the first transfer transistor is applied through the first transfer signal line and the second select signal to turn-on the select transistor is applied through the second select signal line.
5. The image sensor of claim 3 , wherein the second photo diode outputs the photo charge through the first output line when the first transfer signal to turn-on the first transfer transistor is applied through the first transfer signal line and the first select signal to turn-on the select transistor is applied through the first select signal line.
6. The image sensor of claim 3 , wherein the third photo diode outputs the photo charge through the second output line when the first transfer signal to turn-on the first transfer transistor is applied through the first transfer signal line and the second select signal to turn-on the select transistor is applied through the second select signal line.
7. The image sensor of claim 3 , wherein the fourth photo diode outputs the photo charge through the second output line when the first transfer signal to turn-on the first transfer transistor is applied through the first transfer signal line and the first select signal to turn-on the select transistor is applied through the first select signal line.
8. The image sensor of claim 3 , wherein the fifth photo diode outputs the photo charge through the first output line when the second transfer signal to turn-on the second transfer transistor is applied through the second transfer signal line and the second select signal to turn-on the select transistor is applied through the second select signal line.
9. The image sensor of claim 3 , wherein the sixth photo diode outputs the photo charge through the first output line when the second transfer signal to turn-on the second transfer transistor is applied through the second transfer signal line and the first select signal to turn-on the select transistor is applied through the first select signal line.
10. The image sensor of claim 3 , wherein the seventh photo diode outputs the photo charge through the second output line when the second transfer signal to turn-on the second transfer transistor is applied through the second transfer signal line and the second select signal to turn-on the select transistor is applied through the second select signal line.
11. The image sensor of claim 3 , wherein the eighth photo diode outputs the photo charge through the second output line when the second transfer signal to turn-on the second transfer transistor is applied through the second transfer signal line and the first select signal to turn-on the select transistor is applied through the first select signal line.
12. The image sensor of claim 3 , wherein the first photo diode and the horizontally adjacent second photo diode are arranged adjacent to the fifth photo diode and the horizontally adjacent sixth photo diode in a horizontal direction about the first output line.
13. The image sensor of claim 3 , wherein the third photo diode and its horizontally adjacent fourth photo diode are arranged adjacent in a vertical direction to the seventh photo diode and its horizontally adjacent eighth photo diode about the second output line.