Gas storage and dispensing system with monolithic carbon adsorbent
View Patent ↗A pyrolyzed monolith carbon physical adsorbent that is characterized by at least one of the following characteristics: (a) a fill density measured for arsine gas at 25° C. and pressure of 650 torr that is greater than 400 grams arsine per liter of adsorbent; (b) at least 30% of overall porosity of the adsorbent including slit-shaped pores having a size in a range of from about 0.3 to about 0.72 nanometer, and at least 20% of the overall porosity including micropores of diameter <2 nanometers; and (c) having a bulk density of from about 0.80 to about 2.0 grams per cubic centimeter, preferably from 0.9 to 2.0 grams per cubic centimeter.
1. A method of supplying fluid for use in a semiconductor manufacturing process, said method comprising desorbing the fluid from a monolithic carbon adsorbent on which the fluid has previously been adsorbed, and flowing the desorbed fluid to the semiconductor manufacturing process for use therein, wherein the monolithic carbon adsorbent has a bulk density of from 0.9 to 2.0 g/cm 3 , a fill density measured for arsine gas at 25° C. and pressure of 650 torr that is greater than 400 g arsine per liter of adsorbent, and porosity at least 20% of which comprises pores of diameter below 2 nm.
2. The method of claim 1 , wherein the previously adsorbed fluid is stored on said monolithic carbon adsorbent prior to the desorbing, at pressure in a range of from 20 to 1800 torr.
3. The method of claim 1 , wherein the previously adsorbed fluid is stored on said monolithic carbon adsorbent prior to the desorbing, at pressure in a range of from 20 to 1200 torr.
4. The method of claim 1 , wherein the previously adsorbed fluid is stored on said monolithic carbon adsorbent prior to the desorbing, at subatmospheric pressure.
5. The method of claim 1 , wherein the fluid is filtered to remove particulates therefrom prior to use in the semiconductor manufacturing process.
6. The method of claim 1 , wherein the fluid comprises a fluid species selected from the group consisting of hydrides, arsine, phosphine, germane, silane, mono-, di-, and tri-substituted silanes, alkyl silanes of such types, halides, boron trifluoride, boron trichloride, halogen-substituted silanes, organometallic gases, phosgene, diborane, ammonia, stibine, hydrogen sulfide, hydrogen selenide, hydrogen telluride, nitrous oxide, hydrogen cyanide, ethylene oxide, deuterated hydrides, halide (chlorine, bromine, fluorine, and iodine) compounds, F2, SiF4, Cl2, ClF3, GeF4, SiF4, boron halides, organoaluminum compounds, organobarium compounds, organostrontium compounds, organogallium compounds, organoindium compounds, organotungsten compounds, organoantimony compounds, organosilver compounds, organogold compounds, organopalladium compounds, and organogadolinium compounds.
7. The method of claim 1 , wherein the semiconductor manufacturing process comprises ion implantation.
8. The method of claim 7 , wherein the fluid comprises an implant species.
9. The method of claim 1 , wherein the monolithic carbon adsorbent has a bulk density in a range of from 1 to 1.3 g/cm 3 .
10. The method of claim 1 , wherein the monolithic carbon adsorbent has a bulk density in a range of from 1.05 to 1.25 g/cm 3 .
11. The method of claim 1 , wherein the monolithic carbon adsorbent is a pyrolyzate of a PVDC-based polymer.
12. The method of claim 1 , wherein the monolithic carbon adsorbent comprises a plurality of adsorbent articles each of whose x, y, and z axis dimensions is greater than 1.5 cm.
13. The method of claim 1 , wherein the monolithic carbon adsorbent comprises a plurality of adsorbent articles each of whose x, y, and z axis dimensions is greater than 2 cm.
14. The method of claim 12 , wherein said plurality of adsorbent articles comprises disc-shaped adsorbent articles.
15. The method of claim 1 , wherein the monolithic carbon adsorbent has a fill density measured for arsine gas at 25° C. and pressure of 650 torr that is greater than 450 g arsine per liter of adsorbent.
16. The method of claim 1 , wherein at least 30% of the porosity of the monolithic carbon adsorbent comprises pores having a size in a range of from 0.3 to 0.72 nm.
17. The method of claim 1 , wherein the fluid is desorbed from the monolithic carbon adsorbent under the impetus of a reduced pressure in a path for said flowing of the desorbed fluid to the semiconductor manufacturing process.
18. The method of claim 17 , wherein the desorbed fluid is flowed through a mass flow controller in said path.
19. The method of claim 1 , wherein the monolithic carbon adsorbent comprises a plurality of disk-shaped adsorbent articles in a vertically extending stacked arrangement.
20. A method of supplying fluid for use in an ion implanter in a semiconductor manufacturing process, said method comprising desorbing the fluid from a monolithic carbon adsorbent on which the fluid has previously been adsorbed, and flowing the desorbed fluid to the ion implanter in the semiconductor manufacturing process for use therein, wherein the monolithic carbon adsorbent has a bulk density of from 0.9 to 2.0 g/cm 3 , a fill density measured for arsine gas at 25° C. and pressure of 650 torr that is greater than 400 g arsine per liter of adsorbent, and porosity at least 20% of which comprises pores of diameter below 2, and the fluid comprises a fluid species selected from the group consisting of arsine, phosphine, and boron trifluoride.