Structure and method to obtain EOT scaled dielectric stacks
View Patent ↗Equivalent oxide thickness (EOT) scaled high k/metal gate stacks are provided in which the capacitance bottleneck of the interfacial layer is substantially eliminated, with minimal compromise on the mobility of carriers in the channel of the device. In one embodiment, the aforementioned EOT scaled high k/metal gate stacks are achieved by increasing the dielectric constant of the interfacial layer to a value that is greater than the originally formed interfacial layer, i.e., the interfacial layer prior to diffusion of a high k material dopant element therein. In another embodiment, the aforementioned scaled high k/metal gate stacks are achieved by eliminating the interfacial layer from the structure. In yet another embodiment, the aforementioned high k/metal gate stacks are achieved by both increasing the dielectric constant of the interfacial layer and reducing/eliminating the interfacial layer.
1. A method of forming a semiconductor structure comprising: incorporating at least one high k material dopant element within an interfacial layer of at least one patterned gate stack including a high k gate dielectric, a metallic electrode and a Si-containing electrode, wherein said incorporating modifies the interfacial layer into a modified interfacial layer comprising a reaction product of a material of the interfacial layer and at least said at least one high k material dopant element, said modified interfacial layer has an oxygen content that is less than an oxygen content of said interface layer, and wherein said incorporating said at least one high k material dopant element includes diffusion of said high k material dopant element from an overlying interfacial scaling material layer.
2. The method of claim 1 wherein said at least one high k material dopant element is selected from an nFET threshold voltage adjusting element and a pFET threshold voltage element.
3. The method of claim 1 wherein said overlying interfacial scaling material layer is located directly on an upper surface of the interfacial layer.
4. The method of claim 1 wherein said overlying interfacial scaling material layer is located directly on an upper surface of the high k gate dielectric.
5. The method of claim 1 wherein said overlying interfacial scaling material is located directly on an upper surface of said metallic electrode.
6. The method of claim 1 wherein said at least one high k dopant element includes diffusion of an nFET threshold voltage adjusting element from a metallic electrode which includes one of said threshold voltage adjusting elements embedded therein.
7. The method of claim 1 wherein said at least one high k dopant element includes diffusion of a pFET threshold voltage adjusting element from a metallic electrode which includes one of said threshold voltage adjusting elements embedded therein.
8. The method of claim 1 wherein said material of said interfacial layer is selected from a semiconductor oxide, a semiconductor nitride and a nitrided semiconductor, and said at least one high k material dopant element is an nFET threshold voltage adjusting element.
9. The method of claim 1 wherein said material of said interfacial layer is selected from a semiconductor oxide, a semiconductor nitride and a nitrided semiconductor, and said at least one high k material dopant element is a pFET threshold voltage adjusting element.
10. The method of claim 1 wherein said at least one high k material dopant element is an nFET threshold voltage element, and said nFET threshold voltage element is a rare earth metal.
11. The method of claim 1 wherein said at least one high k material dopant element is an nFET threshold voltage element, and said nFET threshold voltage element is an alkaline earth metal.
12. The method of claim 1 wherein said at least one high k material dopant element is a pFET threshold voltage element, and said pFET threshold voltage element includes Al, Ge, Ti, Ni, Co, Tl or Ta.
13. The method of claim 1 , wherein said overlying interfacial scaling material layer is completely consumed and eliminated from the semiconductor structure after said incorporating, and said metallic electrode is located directly on a surface of said high k gate dielectric.