Wafer level chip scale package with thick bottom metal exposed and preparation method thereof

1. A method for manufacturing a wafer level chip scale (WLCS) package device with a thick bottom metal comprising:

providing a semiconductor wafer including a plurality of semiconductor chips having a plurality of bonding pads formed on a front surface of each chip and a plurality of scribe lines to separate the semiconductor chips;

attaching a metal interconnecting structure on each bonding pad;

forming a top package layer covering a front surface of the semiconductor wafer and surrounding each metal interconnecting structure;

thinning from a back surface opposite the front surface of the semiconductor wafer to thin the wafer and depositing a back metal layer to cover the back surface of the thinned wafer;

attaching a lead frame comprising a plurality of thick bottom metals onto the back metal layer, wherein each thick bottom metal is aligned to a central portion of each chip, a plurality of connecting bands thinner than the thick bottom metal interconnecting the thick bottom metals constituting the lead frame;

forming a plurality of back side cutting grooves along the scribe lines penetrating through the connecting bands, the back metal layer and into the wafer to a depth such that at least a portion of the top package layer forms a bottom of the back side cutting grooves;

filling the back side cutting grooves and a space between the adjacent thick bottom metals with a package material; and

cutting through the package material along the back side cutting grooves and the top package layer along the portion of the top package layer forming the bottom of the back side cutting grooves thus forming a plurality of singulated WLCS package devices.

2. The method of claim 1 , wherein the step of forming the top package layer covering the front surface of the semiconductor wafer and surrounding each metal interconnecting structure further comprises forming the top package layer to cover each metal interconnecting structure entirely.

3. The method of claim 2 further comprising a step of thinning the top package layer covering the front surface of the semiconductor wafer to expose a top surface of the metal interconnecting structures, wherein a top surface of the top package layer being coplanar to the top surface of the metal interconnecting structures after the step of filling the back side cutting grooves and the space between the adjacent thick bottom metals with the package material.

4. The method of claim 3 further comprising a step of forming a plurality of metal pads by forming a patterned metal layer on the top surface of the top package layer, wherein each metal pad is electrically connected to one corresponding bonding pad through at least one of the metal interconnecting structures, each metal pad extending over an area larger than an area of the corresponding metal interconnecting structures.

5. The method of claim 1 , wherein the step of forming the back side cutting grooves comprises cutting through an entire thickness of the thinned wafer.

6. The method of claim 1 further comprising a step of forming a plurality of front side cutting grooves along the scribe lines into the wafer to a predetermined depth before the step of forming the top package layer covering the front surface of the semiconductor wafer, wherein the step of forming the top package layer further comprising a step of filling the front side cutting grooves with the top package layer.

7. The method of claim 1 , wherein the plurality of bonding pads comprise a first bonding pad and a second bonding pad and each of the semiconductor chips further comprises a conductive via aligning with the second bonding pad filled with a conductive material, and the step of thinning the semiconductor wafer further removes a portion of the wafer from the back surface to expose the conductive material filling the conducive via.

8. The method of claim 1 , further comprising a step of forming a through via aligned to one of the bonding pads on each semiconductor chip after the step of thinning the wafer, and the step of depositing the back metal layer on the back surface of the thinned wafer further comprising a step of filling the via with a conductive material such that after the deposition of the back metal layer, the bonding pad is aligned to the through via electrically connecting to the back metal layer.

9. The method of claim 1 , wherein a top surface of the metal interconnecting structures extends above a top surface of the top package layer.

10. The method of claim 9 further comprising a step of forming a plurality of front side cutting grooves along the scribe lines into the wafer to a predetermined depth before the step of forming the top package layer covering the front surface of the semiconductor wafer, wherein the step of forming the top package layer further comprising a step of filling the front side cutting grooves with the top package layer.

11. The method of claim 10 , wherein the step of forming the plurality of back side cutting grooves along the scribe lines cutting into the wafer to a bottom portion of the front side cutting grooves.

12. The method of claim 1 , wherein the lead frame comprising the plurality of thick bottom metals has a dimension substantially the same as the wafer.

13. The method of claim 1 , wherein the step of attaching the lead frame comprising the plurality of thick bottom metals onto the back metal layer further comprising:

providing a carrier wafer;

attaching the lead frame on a front surface of the carrier wafer by an adhesive layer;

attaching the back metal layer at the back surface of the thinned wafer on the lead frame at the front surface of the carrier wafer by a conductive bonding material coated on the metal layer, wherein each bottom metal is aligned to the central portion of each chip; and

removing the adhesive layer and the carrier wafer.