Method for forming contact window
View Patent ↗A method for forming a contact window includes: a step of providing a substrate; a step of forming a patterned amorphous carbon layer or spin-on coating layer, in which a surface of the substrate is exposed at two sides of the amorphous carbon layer or spin-on coating layer; a step of forming an interlayer dielectric layer on the substrate; a step of removing a portion of the interlayer dielectric layer until the patterned amorphous carbon layer or spin-on coating layer is exposed; a step of removing the patterned amorphous carbon layer or spin-on coating layer to form an opening; and a step of filling the opening with a conductive material to form the contact window.
1. A method for forming a contact window, comprising:
providing a substrate;
forming a patterned amorphous carbon layer or spin-on coating layer on the substrate, wherein a surface of the substrate is exposed at two sides of the amorphous carbon layer or spin-on coating layer, and the patterned amorphous carbon layer or spin-on coating layer directly contact with the substrate;
forming an interlayer dielectric layer on the substrate;
removing a portion of the interlayer dielectric layer to expose the patterned amorphous carbon layer or spin-on coating layer;
removing the patterned amorphous carbon layer or spin-on coating layer to form an opening; and
filling the opening with a conductive material to form a contact window.
2. The method for forming a contact window of claim 1 , further comprising forming at least an anti-reflection layer on the substrate.
3. The method for forming a contact window of claim 2 , wherein a material of the anti-reflection layer comprises silicon oxynitride.
4. The method for forming a contact window of claim 1 , further comprising forming a liner layer on the substrate after forming the patterned amorphous carbon layer or spin-on coating layer and before forming the interlayer dielectric layer on the substrate.
5. The method for forming a contact window of claim 4 , wherein a material of the liner layer comprises an oxide layer or silicon nitride layer formed by an atomic layer forming method.
6. The method for forming a contact window of claim 1 , wherein a method for removing a portion of the interlayer dielectric layer to expose the patterned amorphous carbon layer or spin-on coating layer comprises a chemical mechanical polishing method.
7. The method for forming a contact window of claim 1 , wherein the spin-on coating layer comprises a spin on hard mask (SOHM) layer and an under layer (UL).
8. The method for forming a contact window of claim 1 , wherein a material of the interlayer dielectric layer comprises silicon oxide, silicon nitride, or silicon oxynitride.
9. The method for forming a contact window of claim 1 , wherein a material of the conductive material is tungsten metal.
10. A method for forming a contact window of a memory, the method comprising:
providing a substrate having a plurality of select gates of a memory formed thereon;
forming a patterned amorphous carbon layer or spin-on coating layer between the plurality of select gates, and the patterned amorphous carbon layer or spin-on coating layer directly contact with the substrate;
forming an interlayer dielectric layer on the substrate;
removing a portion of the interlayer dielectric layer to expose the patterned amorphous carbon layer or spin-on coating layer;
removing the patterned amorphous carbon layer or spin-on coating layer to form an opening; and
filling the opening with a conductive material to form a contact window between the plurality of select gates.
11. The method for forming a contact window of a memory of claim 10 , further comprising forming at least an anti-reflection layer on the substrate.
12. The method for forming a contact window of a memory of claim 11 , wherein a material of the anti-reflection layer comprises silicon oxynitride.
13. The method for forming a contact window of a memory of claim 10 , further comprising forming a liner layer on the substrate after forming the patterned amorphous carbon layer or spin-on coating layer between the plurality of select gates, and before forming the interlayer dielectric layer on the substrate.
14. The method for forming a contact window of claim 13 , wherein a material of the liner layer comprises an oxide layer or silicon nitride layer formed by an atomic layer forming method.
15. The method for forming a contact window of a memory of claim 10 , wherein a method for removing a portion of the interlayer dielectric layer to expose the patterned amorphous carbon layer or spin-on coating layer comprises a chemical mechanical polishing method.
16. The method for forming a contact window of a memory of claim 10 , wherein a method for forming the patterned amorphous carbon layer or spin-on coating layer between the plurality of select gates comprises:
forming the amorphous carbon layer or spin-on coating layer on the substrate; and
patterning the amorphous carbon layer or spin-on coating layer to form the patterned amorphous carbon layer or spin-on coating layer between the plurality of select gates.
17. The method for forming a contact window of a memory of claim 10 , wherein the spin-on coating layer comprises a spin on hard mask (SOHM) layer and an under layer (UL).
18. The method for forming a contact window of a memory of claim 10 , wherein a material of the interlayer dielectric layer comprises silicon oxide, silicon nitride, or silicon oxynitride.
19. The method for forming a contact window of a memory of claim 10 , wherein a material of the conductive material is tungsten metal.