Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus and non-transitory computer readable recording medium

1. A method of manufacturing a semiconductor device, comprising:

forming a stacked film having an oxide film and a nitride film stacked therein on a substrate in a processing container by alternately performing the following steps a predetermined number of times:

(a) forming the oxide film by performing a first cycle a predetermined number of times, the first cycle comprising non-simultaneously supplying a source gas, a nitriding gas and an oxidizing gas to the substrate in the processing container, and

(b) forming the nitride film by performing a second cycle a predetermined number of times, the second cycle comprising supplying the source gas and the nitriding gas to the substrate in the processing container,

wherein (a) and (b) are consecutively performed while keeping a temperature of the substrate at a constant value, and

wherein (a) further comprises adding nitrogen into the oxide film.

2. The method according to claim 1 , wherein the first cycle is performed multiple times.

3. The method according to claim 1 , wherein the first cycle comprises:

repeatedly performing a set of supplying the source gas and supplying the nitriding gas multiple times; and

supplying the oxidizing gas,

wherein the first cycle is performed multiple times.

4. The method according to claim 1 , wherein during (b), the steps of supplying of the source gas and the supplying of the nitriding gas are performed simultaneously.

5. The method according to claim 1 , wherein the forming of the stacked film comprises forming the oxide film on the nitride film, and

the forming of the nitride film is performed by forming the nitride film thicker than a desired nitride film in the stacked film.

6. A method of manufacturing a semiconductor device, comprising:

forming a stacked film having an oxide film and a nitride film stacked therein on a substrate in a processing container by alternately performing the following steps a predetermined number of times:

(a) forming the oxide film by performing a first cycle a predetermined number of times, the first cycle comprising non-simultaneously supplying a source gas, and an oxidizing gas and a reducing gas to the substrate in the processing container, and

(b) forming the nitride film by performing a second cycle a predetermined number of times, the second cycle comprising supplying the source gas and a nitriding gas to the substrate in the processing container,

wherein (a) and (b) are consecutively performed while keeping a temperature of the substrate at a constant value, and

wherein (a) further comprises adding nitrogen into the oxide film.

7. The method according to claim 6 , wherein the first cycle is performed multiple times.

8. The method according to claim 6 , wherein (a) further comprises supplying the oxidizing gas and the reducing gas after performing the first cycle multiple times.

9. The method according to claim 6 , wherein the reducing gas includes a nitrogen-free, hydrogen-containing gas.

10. The method according to claim 6 , wherein the reducing gas includes at least one gas selected from a group consisting of a hydrogen gas and deuterium gas.

11. A method of manufacturing a semiconductor device, comprising:

forming a stacked film having an oxide film and a nitride film stacked therein on a substrate in a processing container by alternately performing the following steps a predetermined number of times:

(a) forming the oxide film by performing a first cycle a predetermined number of times, the first cycle comprising non-simultaneously supplying a source gas, a nitriding gas and an oxidizing gas to the substrate in the processing container, and

(b) forming the nitride film by performing a second cycle a predetermined number of times, the second cycle comprising supplying the source gas and the nitriding gas to the substrate in the processing container,

wherein (a) and (b) are consecutively performed while keeping a temperature of the substrate at a constant value, and

wherein (b) further comprises adding oxygen into the nitride film.

12. A substrate processing apparatus comprising:

a processing container configured to accommodate a substrate;

a heater configured to heat the substrate in the processing container;

a source gas supply system configured to supply a source gas to the substrate in the processing container;

a nitriding gas supply system configured to supply a nitriding gas to the substrate in the processing container;

an oxidizing gas supply system configured to supply an oxidizing gas to the substrate in the processing container;

a reducing gas supply system configured to supply a reducing gas into the substrate in the processing container; and

a control unit configured to control the heater, the source gas supply system, the nitriding gas supply system the oxidizing gas supply system and the reducing gas supply system so as to form a stacked film having an oxide film and a nitride film stacked therein on the substrate in the processing container by alternately performing the following steps a predetermined number of times: (a) forming the oxide film by performing a first cycle a predetermined number of times, the first cycle comprising non-simultaneously supplying the source gas, the nitriding gas, the oxidizing gas and the reducing gas to the substrate in the processing container, and (b) forming the nitride film by performing a second cycle a predetermined number of times, the second cycle comprising supplying the source gas and the nitriding gas to the substrate in the processing container,

wherein (a) and (b) are consecutively performed while retaining a temperature of the substrate at a constant value, and

wherein (a) further comprises adding nitrogen into the oxide film or (b) further comprises adding oxygen into the nitride film.

13. A non-transitory computer-readable recording medium storing a program causing a computer to perform a process, the process comprising:

forming a stacked film having an oxide film and a nitride film stacked therein on a substrate in a processing container by alternately performing the following steps a predetermined number of times:

(a) forming the oxide film by performing a first cycle a predetermined number of times, the first cycle comprising non-simultaneously supplying a source gas, an oxidizing gas and a reducing gas to the substrate in the processing container, and

(b) forming the nitride film by performing a second cycle a predetermined number of times, the second cycle comprising supplying the source gas and a nitriding gas to the substrate in the processing container,

wherein (a) and (b) are consecutively performed while keeping a temperature of the substrate at a constant value, and

wherein (a) further comprises adding nitrogen into the oxide film or (b) further comprises adding oxygen into the nitride film.

14. A method of manufacturing a semiconductor device, comprising:

forming a stacked film having an oxide film and a nitride film stacked therein on a substrate in a processing container by alternately performing the following steps a predetermined number of times:

(a) forming the oxide film by performing a first cycle a predetermined number of times, the first cycle comprising non-simultaneously supplying a source gas, and an oxidizing gas and a reducing gas to the substrate in the processing container, and

(b) forming the nitride film by performing a second cycle a predetermined number of times, the second cycle comprising supplying the source gas and a nitriding gas to the substrate in the processing container,

wherein (a) and (b) are consecutively performed while keeping a temperature of the substrate at a constant value, and

wherein (b) further comprises adding oxygen into the nitride film.