Method for forming resist pattern, and composition for forming resist underlayer film
A resist pattern-forming method capable of forming a resist pattern excellent in pattern collapse resistance in the case of development with the organic solvent in multilayer resist processes. The method has the steps of: (1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film; (2) providing a resist film on the resist underlayer film using a photoresist composition; (3) exposing the resist film; and (4) developing the exposed resist film using a developer solution containing no less than 80% by mass of an organic solvent, in which the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group or a combination thereof.
1. A resist pattern-forming method comprising:
(1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film;
(2) providing a resist film on the resist underlayer film using a photoresist composition;
(3) exposing the resist film; and
(4) developing the exposed resist film using a developer solution comprising no less than 80% by mass of an organic solvent,
wherein the composition for forming a resist underlayer film comprises:
a polysiloxane that comprises an acid anhydride group.
2. The resist pattern-forming method according to claim 1 , wherein the composition for forming a resist underlayer film further comprises a nitrogen-containing compound.
3. A resist pattern-forming method comprising:
(1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film;
(2) providing a resist film on the resist underlayer film using a photoresist composition;
(3) exposing the resist film; and
(4) developing the exposed resist film using a developer solution comprising no less than 80% by mass of an organic solvent,
wherein the composition for forming a resist underlayer film comprises:
a vinyl polymer that comprises a carboxyl group, an acid anhydride group or both thereof; and
a polysiloxane.
4. The resist pattern-forming method according to claim 3 , wherein the vinyl polymer further comprises a silicon-containing group.
5. The resist pattern-forming method according to claim 3 , wherein the composition for forming a resist underlayer film further comprises a nitrogen-containing compound.
6. A resist pattern-forming method comprising:
(1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film;
(2) providing a resist film on the resist underlayer film using a photoresist composition;
(3) exposing the resist film; and
(4) developing the exposed resist film using a developer solution comprising no less than 80% by mass of an organic solvent,
wherein the composition for forming a resist underlayer film comprises:
a vinyl polymer that comprises a group that can generate a carboxyl group by an action of an acid; and
a polysiloxane.
7. The resist pattern-forming method according to claim 6 , wherein the vinyl polymer further comprises a silicon-containing group.
8. The resist pattern-forming method according to claim 6 , wherein the composition for forming a resist underlayer film further comprises a nitrogen-containing compound.