Germanium antimony telluride materials and devices incorporating same
View Patent ↗Germanium antimony telluride materials are described, e.g., material of the formula Ge x Sb y Te z C m N n , wherein x is about 0.1-0.6, y is about 0-0.7, z is about 0.2-0.9, m is about 0.02-0.20, and n is about 0.2-0.20. One specific composition includes from 0 to 50% Sb, from 50 to 80% Te, from 20 to 50% Ge, from 3 to 20% N and from 2 to 15% carbon, wherein all atomic percentages of all components of the film total to 100 atomic %. Another specific composition includes from 10 to 50% Sb, from 50 to 80% Te, from 10 to 50% Ge, from 3 to 20% N and from 3 to 20% carbon, and wherein all atomic percentages of all components of the film total to 100 atomic %. Material of such composition is useful to form phase change films, e.g., as conformally coated on a phase change memory device substrate to fabricate a phase change random access memory cell.
1. A chalcogenide germanium-antimony-tellurium material doped with carbon and nitrogen, wherein the amount of tellurium is greater than 50 at. %, wherein carbon is doped in said material at 2-20 at. %, and wherein nitrogen is doped in said material at 2-20 at. %.
2. A material according to claim 1 , wherein the amount of tellurium is at least an amount selected from the group consisting of:
55 at. % tellurium;
54.5% tellurium;
53.9% tellurium;
53.3% tellurium;
52.9% tellurium;
52% tellurium;
51% tellurium; and
54% tellurium.
3. The material of claim 1 , wherein the amount of tellurium is in a range of from 55 to 80 at. %.
4. The material of claim 1 , wherein carbon is doped in said film at 3 to 20 at. %.
5. The material of claim 1 , wherein carbon is doped in said film at 2 to 15 at. %.
6. The material of claim 1 , wherein carbon is doped in said film at 2 to 10 at. %.
7. The material of claim 1 , wherein carbon is doped in said film at 3 to 10 at. %.
8. The material of claim 1 , wherein carbon is doped in said film at 2 to 6 at. %.
9. The material of claim 1 , wherein the material comprises a vapor deposited film wherein tellurium derives from a ditelluride precursor of the formula R—Te—Te—R in which each R is independently selected from methyl, ethyl, isopropyl, tertiary butyl, and trimethylsilyl at. %.
10. The material of claim 1 , wherein nitrogen is doped in said film at 3 to 20 at. %.
11. The material of claim 1 , wherein nitrogen is doped in said film at 3 to 15 at. %.
12. The material of claim 1 , wherein nitrogen is doped in said film at 3 to 12 at. %.
13. The material of claim 1 , wherein nitrogen is doped in said film at 3 to 10 at. %.
14. The material of claim 1 , wherein nitrogen is doped in said film at 5 to 10 at. %.
15. The material of claim 1 , as conformally coated on a substrate.
16. The material of claim 15 , wherein the substrate comprises a microelectronic device or device precursor structure substrate.
17. A microelectronic device including a material of claim 1 .
18. The microelectronic device of claim 17 , comprising a phase change memory cell.
19. The microelectronic device of claim 17 , comprising a memory device.
20. A GST film having an atomic composition comprising from 0 to 50% Sb, from 55 to 80% Te, from 20 to 50% Ge, from 3 to 20% N and from 2 to 15% carbon, and wherein all atomic percentages of all components of the film total to 100 atomic %.
21. A GST thin film having an atomic composition comprising from 10 to 50% Sb, from 55 to 80% Te, from 10 to 50% Ge, from 3 to 20% N and from 3 to 20% carbon, and wherein all atomic percentages of all components of the film total to 100 atomic %.