Method for manufacturing semiconductor device, method for processing substrate and substrate processing apparatus
View Patent ↗There is provided a method for manufacturing a semiconductor device, including forming an insulating film having a prescribed composition and a prescribed film thickness on a substrate by alternately performing the following steps prescribed number of times: supplying one of the sources of a chlorosilane-based source and an aminosilane-based source to a substrate in a processing chamber, and thereafter supplying the other source, to form a first layer containing silicon, nitrogen, and carbon on the substrate; and supplying a reactive gas different from each of the sources, to the substrate in the processing chamber, to modify the first layer and form a second layer.
1. A method for manufacturing a semiconductor device, comprising
forming an insulating film on a substrate by alternately performing the following steps one or more times:
supplying one of the sources of a chlorosilane-based source and an aminosilane-based source to a substrate in a processing chamber, and thereafter supplying the other source, to form a first layer containing silicon, nitrogen, and carbon on the substrate; and
supplying a reactive gas different from each of the sources, to the substrate in the processing chamber, to modify the first layer and form a second layer.
2. The method of claim 1 , wherein in forming the second layer, thermally or plasma activated nitrogen-containing gas is supplied to the substrate as the reactive gas, to form a silicon carbonitride layer or a silicon nitride layer as the second layer, and
in forming the insulating film, a silicon carbonitride film or a silicon nitride film is formed as the insulating film.
3. The method of claim 1 , wherein in forming the second layer, thermally activated nitrogen-containing gas is supplied to the substrate as the reactive gas, to form a silicon carbonitride layer as the second layer, and
in forming the insulating film, a silicon carbonitride film is formed as the insulating film.
4. The method of claim 1 , wherein in forming the second layer, plasma activated nitrogen-containing gas is supplied to the substrate as the reactive gas, to form a silicon nitride layer as the second layer, and
in forming the insulating film, a silicon nitride film is formed as the insulating film.
5. The method of claim 1 , wherein in forming the second layer, thermally activated carbon-containing gas is supplied to the substrate as the reactive gas, to form a silicon carbonitride layer as the second layer, and
in forming the insulating film, a silicon carbonitride film is formed as the insulating film.
6. The method of claim 1 , wherein in forming the second layer, thermally or plasma-activated oxygen-containing gas is supplied to the substrate as the reactive gas, to form a silicon oxycarbonitride layer, a silicon oxycarbide layer, or a silicon oxide layer as the second layer, and
in forming the insulating film, a silicon oxycarbonitride film, a silicon oxycarbide film, or a silicon oxide film is formed as the insulating film.
7. The method of claim 1 , wherein in forming the second layer, thermally activated oxygen-containing gas is supplied to the substrate as the reactive gas, to form a silicon oxycarbonitride layer or a silicon oxycarbide layer as the second layer, and
in forming the insulating film, a silicon oxycarbonitride film or a silicon oxycarbide film is formed as the insulating film.
8. The method of claim 1 , wherein in forming the second layer, plasma activated oxygen-containing gas is supplied to the substrate as the reactive gas, to form a silicon oxide layer or a silicon oxycarbide layer as the second layer, and
in forming the insulating film, a silicon oxide film or a silicon oxycarbide film is formed as the insulating film.
9. The method of claim 1 , wherein in forming the second layer, thermally activated boron-containing gas is supplied to the substrate as the reactive gas, to form a silicon boron carbonitride layer as the second layer, and
in forming the insulating film, a silicon boron carbonitride film is formed as the insulating film.
10. The method of claim 1 , wherein in forming the second layer, thermally activated carbon-containing gas is supplied to the substrate as the reactive gas, and thereafter thermally activated nitrogen-containing gas is supplied to the substrate as the reactive gas, to form a silicon carbonitride layer as the second layer, and
in forming the insulating film, a silicon carbonitride film is formed as the insulating film.
11. The method of claim 1 , wherein in forming the second layer, thermally activated carbon-containing gas is supplied to the substrate as the reactive gas, and thereafter thermally activated oxygen-containing gas is supplied to the substrate as the reactive gas, to form a silicon oxycarbonitride layer as the second layer, and
in forming the insulating film, a silicon oxycarbonitride film is formed as the insulating film.
12. The method of claim 1 , wherein in forming the second layer, thermally activated boron-containing gas is supplied to the substrate as the reactive gas, and thereafter thermally activated nitrogen-containing gas is supplied to the substrate as the reactive gas, to form a silicon boron carbonitride layer as the second layer, and
in forming the insulating film, a silicon boron carbonitride film is formed as the insulating film.
13. The method of claim 1 , wherein in forming the second layer, thermally activated nitrogen-containing gas is supplied to the substrate as the reactive gas, and thereafter thermally activated oxygen-containing gas is supplied to the substrate as the reactive gas, to form a silicon oxycarbonitride layer as the second layer, and
in forming the insulating film, a silicon oxycarbonitride film is formed as the insulating film.
14. The method of claim 1 , wherein in forming the second layer, thermally activated carbon-containing gas is supplied to the substrate as the reactive gas, and thereafter thermally activated nitrogen-containing gas is supplied to the substrate as the reactive gas, and thereafter thermally activated oxygen-containing gas is supplied to the substrate as the reactive gas, to form a silicon oxycarbonitride layer as the second layer, and
in forming the insulating film, a silicon oxycarbonitride film is formed as the insulating film.
15. The method of claim 1 , wherein in forming the second layer, thermally activated carbon-containing gas is supplied to the substrate as the reactive gas, and thereafter thermally activated boron-containing gas is supplied to the substrate as the reactive gas, and thereafter thermally activated nitrogen-containing gas is supplied to the substrate as the reactive gas, to form a silicon boron carbonitride layer as the second layer, and
in forming the insulating film, a silicon boron carbonitride film is formed as the insulating film.
16. A method for processing a substrate comprising:
forming an insulating film on a substrate by alternately performing the following steps one or more times:
supplying one of the sources of a chlorosilane-based source and an aminosilane-based source to the substrate in a processing chamber, and thereafter supplying the other source, to form a first layer containing silicon, nitrogen, and carbon on the substrate; and
supplying a reactive gas different from each of the sources, to the substrate in the processing chamber, to modify the first layer and form a second layer.