Semiconductor light emitting chip and method for processing substrate
Disclosed is a semiconductor light emitting chip ( 20 ) that is composed of: a substrate ( 10 ), which has the C plane of a sapphire single crystal as the front surface, and the side surfaces ( 25, 26 ) configured of planes that intersect all the planes equivalent to the M plane of the sapphire single crystal, and which includes modified regions ( 23, 24 ) in the side surfaces ( 25, 26 ), the modified regions being formed by laser radiation; and a light emitting element ( 12 ), which is provided on the substrate front surface ( 10 a ) of the substrate ( 10 ). In the semiconductor light emitting chip, a tilt of the substrate side surfaces with respect to the substrate front surface is suppressed. Also disclosed is a method for processing the substrate.
1. A semiconductor light emitting chip comprising:
a substrate in which a C plane of a sapphire single crystal is assumed to be a front surface, and a side surface is configured with a plane that intersects any of planes equivalent to an M plane of the sapphire single crystal, the substrate including modified regions formed by laser irradiation in the side surface; and
a semiconductor light emitting element provided on the front surface of the substrate,
wherein, in the front surface of the substrate, a crossing angle of the side surface intersecting the M plane of the sapphire single crystal is 10° or more and 20° or less.
2. The semiconductor light emitting chip according to claim 1 , wherein a surface shape of the semiconductor light emitting chip is a parallelogram.
3. The semiconductor light emitting chip according to claim 1 , wherein a surface shape of the semiconductor light emitting chip is a trapezoid.