Method of manufacturing semiconductor device

1. A method of manufacturing a semiconductor device, the method comprising:

forming a hole penetrating from one surface of a substrate to an electrode formed on the other surface of the substrate;

forming an organic insulating film in the hole;

removing at least a part of the organic insulating film formed in a bottom portion of the hole and not the organic insulating film formed on a side wall portion of the hole, to expose the electrode;

cleaning an exposed surface of the electrode by using plasma of an inert gas;

filling a conductive metal in the hole;

removing at least a part of a surface of the organic insulating film by the reaction of oxygen plasma after the cleaning is performed; and

annealing the substrate in a dysoxidative atmosphere after the removing of at least the part of the surface of the organic insulation film is performed.

2. The method of claim 1 , wherein the organic insulating film is a polyimide film.

3. The method of claim 2 , wherein the polyimide film is formed by evaporation polymerization.

4. The method of claim 2 , wherein Ar plasma is used as the plasma of the inert gas during the cleaning.

5. The method of claim 2 , wherein the removing of the surface of the organic insulating film is performed by using down flow plasma.

6. The method of claim 2 , wherein in the annealing of the substrate, the substrate is heated to 200° C. to 400° C.

7. The method of claim 2 , wherein in the removing of the surface of the organic insulating film, the surface of the polyimide film is removed by at least 0.1 μm.

8. The method of claim 2 , wherein in the annealing of the substrate, the substrate is heated to 200° C. to 300° C.