Monolithic integrated power regulation for power control and/or bias control
View Patent ↗An apparatus comprising a power amplifier and a control circuit. The power amplifier may be configured to generate an output signal in response to an input signal and a control signal. The control circuit may be configured to present (i) a bias signal as the control signal during un-regulated conditions and (ii) a power down voltage as the control signal when one or more predetermined design parameters are exceeded. The magnitude of the control signal may be configured to dynamically adjust a power level of the output signal. The power down voltage may be generated by sampling the input signal.
1. An apparatus comprising:
a power amplifier configured to generate an output signal in response to (i) an input signal and (ii) a control signal; and
a control circuit configured to present (i) a bias signal as said control signal during un-regulated conditions and (ii) a power down voltage as said control signal when one or more predetermined design parameters are exceeded, wherein (a) a magnitude of said control signal is configured to dynamically adjust a power level of said output signal, (b) said power down voltage is generated by sampling said input signal and (c) said control circuit includes an adjustment circuit comprising a biasing and voltage dividing network of a plurality of resistors, said adjustment circuit configured to generate said control signal.
2. The apparatus according to claim 1 , wherein said control circuit further comprises:
a coupler (i) connected in parallel with the power amplifier and (ii) configured to provide a power regulation signal in response to said input signal; and
a power detection circuit configured to provide a DC voltage signal in response to (i) the power regulation signal and (ii) a supply voltage.
3. The apparatus according to claim 2 , wherein said power amplifier, said coupler, said power detection circuit and said control circuit are implemented on a single integrated circuit (IC).
4. The apparatus according to claim 3 , wherein a semiconductor substrate for implementing said integrated circuit is selected from a group consisting of silicon, gallium arsenide, and gallium nitride.
5. The apparatus according to claim 2 , wherein the power detection circuit further comprises:
a plurality of passive elements configured to match base conditions for gate control of the power amplifier.
6. The apparatus according to claim 4 , wherein the power detection circuit further comprises:
a plurality of active elements configured to match base conditions for gate control of the power amplifier.
7. The apparatus according to claim 1 , wherein said control circuit is configured to sample a small amount of power from the power amplifier.
8. The apparatus according to claim 6 , wherein said sample is from an output of the power amplifier.
9. The apparatus according to claim 6 , wherein said sample is from an input of the power amplifier.
10. The apparatus according to claim 1 , wherein said apparatus provides power regulation based on a power level of said power amplifier.
11. The apparatus according to claim 2 , wherein the power detection circuit further comprises:
an RF power to DC voltage generation circuit configured to charge hold the DC voltage over a sample period.
12. The apparatus according to claim 10 , further comprising a temperature compensation circuit.
13. The apparatus according to claim 1 , wherein said apparatus is implemented using a plurality of Gallium Nitride transistors.
14. A method for controlling a power amplifier comprising the steps of:
(A) generating an output signal in response to (i) an input signal and (ii) a control signal; and
(B) generating a bias signal as said control signal during un-regulated conditions; and
(C) generating a power down voltage as said control signal when one or more predetermined design parameters are exceeded, wherein (a) a magnitude of said control signal is configured to dynamically adjust a power level of said output signal, (b) said power down voltage is generated by sampling said input signal and (c) said control signal is generated by an adjustment circuit comprising a biasing and voltage dividing network of a plurality of resistors.
15. An apparatus comprising:
a power amplifier configured to generate an output signal in response to (i) an input signal and (ii) a control signal; and
a control circuit configured to present (i) a bias signal as said control signal during un-regulated conditions and (ii) a power down voltage as said control signal when one or more predetermined design parameters are exceeded, wherein (A) a magnitude of said control signal is configured to dynamically adjust a power level of said output signal, (B) said power down voltage is generated by sampling said input signal, (C) said control circuit further comprises (a) a coupler (i) connected in parallel with the power amplifier and (ii) configured to provide a power regulation signal in response to said input signal, (b) a power detection circuit configured to provide a DC voltage signal in response to (i) the power regulation signal and (ii) a supply voltage and (c) an adjustment circuit configured to generate said control signal, (D) said power amplifier, said coupler, said power detection circuit and said control circuit are implemented on a single integrated circuit (IC), (E) a semiconductor substrate for implementing said integrated circuit is selected from a group consisting of silicon, gallium arsenide, and gallium nitride (F) the power detection circuit further comprises a plurality of active elements configured to match base conditions for gate control of the power amplifier, and (G) said sample is from an output of the power amplifier.
16. The apparatus according to claim 15 , wherein said adjustment circuit comprises a biasing and voltage dividing network of a plurality of resistors.