IP Library Granted Patent US 9,053,777
Granted Patent B1
US 9,053,777 · App. 13/661,849 · Granted Jun 9, 2015

Methods and apparatus for memory interface systems

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Quick Facts
Patent No.
US 9,053,777
App. No.
13/661,849
Granted
Jun 9, 2015
Kind
B1
Abstract

Methods and systems for memory interface systems are provided. A first command from control circuitry is received by bridge circuitry at a first clock rate. The control circuitry is configured to operate at the first clock rate. A second command is generated by the control circuitry on the received first command. The second command is transmitted to memory circuitry at a second clock rate. The memory circuitry is configured to operate at the second clock rate, and the second clock rate is greater than the first clock rate.

Claims (77)

1. A system comprising bridge circuitry, wherein the bridge circuitry is configured to:

receive a first command from control circuitry at a first clock rate, wherein:

the control circuitry comprises programmable circuitry, and

the control circuitry is configured to operate at the first clock rate;

generate a second command based on the received first command; and

transmit the second command to memory circuitry at a second clock rate, wherein:

the memory circuitry comprises dynamic random access memory (DRAM) circuitry,

the memory circuitry is configured to operate at the second clock rate, and

the second clock rate is greater than the first clock rate.

2. The system of claim 1 , wherein:

data stored in the DRAM memory circuitry is lost in response to the DRAM memory circuitry receiving the refresh commands at a rate less than a threshold rate, and

the control circuitry, in response to being configured to operate at the first clock rate, is configured to transmit the refresh commands to the DRAM memory circuitry at a maximum rate that is less than the threshold rate.

3. The system of claim 1 , wherein:

the bridge circuitry further comprises refresh timer circuitry configured to periodically refresh data stored in the DRAM memory circuitry.

4. The system of claim 1 , wherein the bridge circuitry is further configured to:

receive a data read command from the control circuitry, wherein the data read command is associated with a first interface scheme;

transmit to the memory circuitry a plurality of commands based on the received data read command, wherein the transmitted plurality of commands is associated with the first interface scheme, and

receive, from the memory circuitry, based on the transmitted plurality of commands, stored data associated with the data read command.

5. The system of claim 1 , wherein the bridge circuitry is further configured to:

receive, from the control circuitry, a data write command and data associated with the data write command, wherein the data write command is associated with a first interface scheme; and

transmit to the memory circuitry a plurality of commands based on the received data write command, wherein:

the plurality of commands are associated with the first interface scheme, and

the plurality of commands configure the memory circuitry to store the data associated with the received data write command.

6. The system of claim 1 , wherein the bridge circuitry is further configured to:

receive, with the bridge circuitry, a burst data read command from the control circuitry, wherein the burst data read command is associated with a plurality of data addresses of data stored in the memory circuitry;

transmit to the memory circuitry a plurality of commands based on the received burst data read command, and

receive, from memory circuitry, based on the transmitted plurality of commands, data stored in the memory circuitry at each data address of the plurality of data addresses.

7. The system of claim 1 , wherein:

the control circuitry is configured to operate in a first clock domain associated with the first clock rate;

the memory circuitry is configured to operate in a second clock domain associated with the second clock rate; and

the first clock domain is independent from the second clock domain.

8. The system of claim 1 , wherein the bridge circuitry is further configured to appear to the control circuitry as a further memory circuitry configured to operate at the first clock rate.

9. A method comprising:

receiving, with bridge circuitry, a first command from control circuitry at a first clock rate, wherein:

the control circuitry comprises programmable circuitry, and

the control circuitry is configured to operate at the first clock rate;

generating a second command based on the received first command; and

transmitting the second command to memory circuitry at a second clock rate, wherein:

the memory circuitry comprises dynamic random access memory (DRAM) circuitry,

the memory circuitry is configured to operate at the second clock rate, and

the second clock rate is greater than the first clock rate.

10. The method of claim 9 , wherein:

data stored in the DRAM memory circuitry is lost in response to the DRAM memory circuitry receiving the refresh commands at a rate less than a threshold rate, and

the control circuitry, in response to being configured to operate at the first clock rate, is configured to transmit the refresh commands to the DRAM memory circuitry at a maximum rate that is less than the threshold rate.

11. The method of claim 9 , wherein:

the bridge circuitry further comprises refresh timer circuitry configured to periodically refresh data stored in the DRAM memory circuitry.

12. The method of claim 9 , further comprising:

receiving, with the bridge circuitry, a data read command from the control circuitry, wherein the data read command is associated with a first interface scheme;

transmitting to the memory circuitry a plurality of commands based on the received data read command, wherein the transmitted plurality of commands is associated with the first interface scheme, and

receiving, from the memory circuitry, based on the transmitted plurality of commands, stored data associated with the data read command.

13. The method of claim 9 , further comprising:

receiving, with the bridge circuitry, from the control circuitry, a data write command and data associated with the data write command, wherein the write command is associated with a first interface scheme; and

transmitting to the memory circuitry a plurality of commands based on the received data write command, wherein:

the plurality of commands are associated with the first interface scheme, and

the plurality of commands configure the memory circuitry to store the data associated with the received data write command.

14. The method of claim 9 , further comprising:

receiving, with the bridge circuitry a burst data read command from the control circuitry, wherein the burst data read command is associated with a plurality of data addresses of data stored in the memory circuitry;

transmitting to the memory circuitry a plurality of commands based on the received burst data read command, and

receiving, from memory circuitry, based on the transmitted plurality of commands, data stored in the memory circuitry at each data address of the plurality of data addresses.

15. The method of claim 9 , wherein:

the control circuitry is configured to operate in a first clock domain associated with the first clock rate;

the memory circuitry is configured to operate in a second clock domain associated with the second clock rate; and

the first clock domain is independent from the second clock domain.

16. The method of claim 9 , wherein the bridge circuitry is further configured to appear to the control circuitry as a further memory circuitry configured to operate at the first clock rate.

17. Bridge circuitry comprising:

address logic circuitry configured to process a first data address received from control circuitry at a first clock rate, wherein the control circuitry is configured to operate at the first clock rate;

state machine circuitry configured to generate a first plurality of commands based on a read command received from the control circuitry at the first clock rate; and

read data circuitry configured to:

receive, from memory circuitry, first data stored in the memory circuitry based on transmitting the processed first data address and the generated first plurality of commands to the memory circuitry at a second clock rate, wherein:

the memory circuitry is configured to operate a at the second clock rate, and

the second clock rate is greater than the first clock rate; and

store the received first data in read buffer circuitry accessible to the control circuitry.

18. The bridge circuitry of claim 17 , further comprising write data circuitry configured to receive, at the first clock rate, second data from the control circuitry, wherein:

the address logic circuitry is further configured to process a second data address received from the control circuitry,

the second data is associated with a second data address,

the state machine circuitry is further configured to generate a second plurality of commands based on a write command received from the control circuitry at the first clock rate, and

the memory circuitry is further configured to store the second data at the processed second data address based on receiving the second plurality of commands from the bridge circuitry at the second clock rate.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 1, 2022
From: INTEL CORPORATION
To: TAHOE RESEARCH, LTD.
Reel/Frame 061827/0686 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 20, 2022
From: ALTERA CORPORATION
To: INTEL CORPORATION
Reel/Frame 060778/0032 →