IP Library Granted Patent US 8,872,338
Granted Patent B2
US 8,872,338 · App. 13/675,008 · Granted Oct 28, 2014

Trace routing within a semiconductor package substrate

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Quick Facts
Patent No.
US 8,872,338
App. No.
13/675,008
Filed
Nov 13, 2012
Granted
Oct 28, 2014
Kind
B2
Art Unit
2826
USPC
257/738
Abstract

A semiconductor device includes a substrate configured with a plurality of conductive traces. The traces are configured to electrically couple to an integrated circuit (IC) die and at least one of the plurality of conductive traces includes first electrically conductive portions in a first electrically conductive layer of the substrate, second electrically conductive portions in a second electrically conductive layer of the substrate, and first electrically conductive connections between the first electrically conductive portions and the second electrically conductive portions. The first and second electrically conductive portions and the first electrically conductive connections form a continuous path along at least a portion of the at least one of the conductive traces. Time delay of conducting a signal along the at least one of the conductive traces is within a specified amount of time of time delay of conducting a signal along another one of the plurality of conductive traces.

Claims (44)

1. A semiconductor device comprising:

a substrate;

an integrated circuit (IC) die coupled to the substrate; and

a plurality of metal traces in the substrate, wherein at least one of the metal traces includes

a plurality of first metal portions in a first metal layer,

a plurality of second metal portions in a second metal layer,

a plurality of first vias connecting the first metal portions to the second metal portions so that the at least one metal trace is continuous along a length of the at least one metal trace, and the first metal portions, the second metal portions, and the first vias are positioned in a single vertical plane with respect to a top major surface and a bottom major surface of the substrate, wherein the routing delay of the at least one metal trace matches routing delay of another one of the plurality of metal traces within a specified tolerance.

2. The device of claim 1 further comprising:

conductive bumps on a bottom major surface of the IC die that attach to the substrate.

3. The device of claim 1 further comprising:

solder balls on a bottom major surface of the substrate.

4. The device of claim 3 further comprising:

a printed circuit board, wherein the solder balls attach the substrate to the printed circuit board.

5. The device of claim 1 wherein the at least one of the metal traces is routed within a predetermined distance of at least another one of the metal traces.

6. The device of claim 1 further comprising:

the at least one of the metal traces includes:

a plurality of third metal portions in a third metal layer; and

a plurality of second vias connecting the second metal portions to the third metal portions so that the at least one metal trace is continuous along a length of the at least one metal trace, and the first, second and third metal portions and the first and second vias are positioned in the single vertical plane with respect to the top major surface and the bottom major surface of the substrate.

7. The device of claim 1 wherein the substrate is a printed circuit board.

8. The device of claim 1 wherein the IC die is a flip chip.

9. A method comprising:

forming a plurality of conductive traces in a substrate, the substrate is adapted to couple to an integrated circuit (IC) die, at least one of the conductive traces is formed by:

forming a first set of metal portions in a first metal layer;

forming a second set of metal portions in a second metal layer; and

forming a plurality of first connections between the first set of metal portions and the second set of metal portions so that the at least one of the conductive traces is continuous along a length of the at least one of the conductive traces across a portion of the substrate, wherein a first time delay of conducting a signal through the at least one of the conductive traces matches a second time delay of conducting a signal through at least one of the other conductive traces within a predetermined amount of time, wherein the first set of metal portions, the second set of metal portions, and the plurality of first connections are positioned in a single vertical plane with respect to a top major surface and a bottom major surface of the substrate.

10. The method of claim 9 wherein:

forming the first connections includes forming first vias.

11. The method of claim 9 further comprising:

forming a third set of metal portions in a third metal layer; and

forming second connections between the second set of metal portions and the third set of metal portions.

12. The method of claim 9 , wherein the substrate is a package substrate.

13. The method of claim 9 wherein the substrate is a printed circuit board.

14. The method of claim 9 wherein the IC die is a flip chip.

15. A semiconductor device comprising:

a substrate configured with a plurality of conductive traces, wherein the conductive traces are configured to electrically couple to an integrated circuit (IC) die and at least one of the plurality of conductive traces includes:

first electrically conductive portions in a first electrically conductive layer of the substrate;

second electrically conductive portions in a second electrically conductive layer of the substrate; and

a plurality of first electrically conductive connections between the first electrically conductive portions and the second electrically conductive portions, the first and second electrically conductive portions and the first electrically conductive connections form a continuous path along at least a portion of the at least one of the conductive traces, wherein time delay of conducting a signal along the at least one of the conductive traces is within a specified amount of time of time delay of conducting a signal along another one of the plurality of conductive traces, wherein the first set of metal portions, the second set of metal portions, and the plurality of first connections are positioned in a single vertical plane with respect to a top major surface and a bottom major surface of the substrate.

16. The device of claim 15 wherein the first electrically conductive portions, the second electrically conductive portions, and the first electrically conductive connections are co-planar between the first and second conductive layers.

17. The device of claim 15 wherein the first electrically conductive connections are vias.

18. The device of claim 15 further comprising:

third electrically conductive portions in a third electrically conductive layer of the substrate; and

second electrically conductive connections between the second electrically conductive portions and the third electrically conductive portions, the first, second and third electrically conductive portions and the first and second electrically conductive connections form the continuous path along at least the portion of the at least one of the conductive traces.

19. The device of claim 15 wherein the substrate is one of a group consisting of a package substrate and a printed circuit board.

Assignments (15)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
PATENT RELEASE Recorded Jan 14, 2016
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037494/0312 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0685 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0671 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Apr 22, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030258/0558 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Apr 22, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 030258/0540 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Apr 22, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030258/0523 →