Method and system for a semiconductor device package with a die-to-die first bond

1. A method for semiconductor packaging, the method comprising:

bonding one or more semiconductor die comprising electronic devices to an interposer die;

applying an underfill material between said one or more semiconductor die and said interposer die;

applying a mold material to encapsulate the one or more bonded semiconductor die;

thinning said interposer die to expose through-silicon-vias (TSVs);

applying metal contacts to said exposed TSVs; and

bonding said interposer die with the bonded one or more semiconductor die to a packaging substrate, wherein said bonding said one or more semiconductor die comprises:

adhering said one or more semiconductor die to an adhesive layer; and

bonding the adhered one or more semiconductor die to said interposer die.

2. The method according to claim 1 , wherein said one or more semiconductor die comprise micro-bumps for coupling to said interposer die, wherein said bonding comprises:

positioning said micro-bumps in respective wells in a layer disposed on said interposer die; and

bonding said micro-bumps to said interposer die.

3. The method according to claim 1 , wherein said underfill material is applied utilizing a capillary underfill process.

4. The method according to claim 1 , comprising bonding said one or more semiconductor die to said interposer die utilizing a mass reflow process.

5. The method according to claim 1 , comprising bonding said one or more semiconductor die to said interposer die utilizing a thermal compression process.

6. The method according to claim 1 , comprising bonding one or more additional semiconductor die to said one or more semiconductor die utilizing a mass reflow process.

7. The method according to claim 1 , comprising bonding one or more additional semiconductor die to said one or more semiconductor die utilizing a thermal compression process.

8. The method according to claim 7 , wherein one or more polymers are utilized in said thermal compression process, said polymers comprising one or more of: anisotropic films and conductive adhesives.

9. The method according to claim 1 , wherein said mold material comprises a polymer.

10. The method according to claim 1 , wherein said bonding of said one or more semiconductor die comprises:

placing said one or more semiconductor die and said interposer die in a fixture that allows said one or more semiconductor die and said interposer die to flex in one direction but not in an opposite direction; and

processing said one or more semiconductor die and said interposer die through a reflow process.

11. A method for semiconductor packaging, the method comprising:

Generating a semiconductor package in a die-to-die first bond process, said process comprising:

bonding one or more semiconductor die comprising electronic devices to an interposer die;

applying an underfill material between said one or more semiconductor die and said interposer die;

applying a mold material to encapsulate the one or more bonded semiconductor die;

thinning said interposer die to expose through-silicon-vias (TSVs);

applying metal contacts to said exposed TSVs; and

bonding said interposer die with the bonded one or more semiconductor die to a packaging substrate, wherein said bonding of said one or more semiconductor die comprises:

adhering said one or more semiconductor die to an adhesive layer; and

bonding the adhered one or more semiconductor die to said interposer die.

12. The method according to claim 11 , wherein said one or more semiconductor die comprise micro-bumps for coupling to said interposer die, wherein said bonding comprises:

positioning said micro-bumps in respective wells in a layer disposed on said interposer die; and

bonding said micro-bumps to said interposer die.

13. The method according to claim 11 , wherein said underfill material is applied utilizing a capillary underfill process.

14. The method according to claim 11 , comprising bonding said one or more semiconductor die to said interposer die utilizing a mass reflow process.

15. The method according to claim 11 , comprising bonding said one or more semiconductor die to said interposer die utilizing a thermal compression process.

16. The method according to claim 11 , comprising bonding one or more additional semiconductor die to said one or more semiconductor die utilizing a mass reflow process.

17. The method according to claim 11 , comprising bonding one or more additional semiconductor die to said one or more semiconductor die utilizing a thermal compression process.

18. The method according to claim 17 , wherein one or more polymers are utilized in said thermal compression process, said polymers comprising one or more of: anisotropic films and conductive adhesives.

19. The method according to claim 11 , wherein said bonding of said one or more semiconductor die comprises:

placing said one or more semiconductor die and said interposer die in a fixture that allows said one or more semiconductor die and said interposer die to flex in one direction but not in an opposite direction; and

processing said one or more semiconductor die and said interposer die through a reflow process.

20. A method for semiconductor packaging, the method comprising:

generating a semiconductor package in a die-to-die first bond process, said process comprising:

placing a first surface of one or more semiconductor die comprising electronic devices on an adhesive layer;

bonding an opposite surface of said one or more semiconductor die to an interposer die;

removing said adhesive layer from said first surface of said one or more semiconductor die;

applying an underfill material between said one or more semiconductor die and said interposer die;

applying a mold material to encapsulate the one or more bonded semiconductor die; and

bonding said interposer die with the bonded one or more semiconductor die to a packaging substrate.