CARBON MATERIALS FOR CARBON IMPLANTATION
A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the ions into the target substrate. The carbon-containing dopant material is of the formula C w F x O y H z wherein if w=1, then x>0 and y and z can take any value, and wherein if w>1 then x or y is >0, and z can take any value. Such method significantly improves the efficiency of an ion implanter tool, in relation to the use of carbon source gases such as carbon monoxide or carbon dioxide.
1 . A method of implanting carbon in a substrate from a carbon-containing dopant material, comprising:
co-flowing additional gas or gases with the carbon-containing dopant material; and
ionizing the carbon-containing dopant material to form ions comprising positive carbon ions.
2 . The method of claim 1 , wherein the co-flowing additional gas or gases comprises gas selected from the group consisting of oxygen, oxygen-containing gas, COF 2 , CO 2 , CO, air, hydrogen, fluorine, nitrogen, argon, xenon, and helium.
3 . The method of claim 1 , wherein the co-flowing additional gas or gases comprises hydrogen or helium.
4 . The method of claim 1 , wherein the co-flowing additional gas or gases comprises inert gas selected from the group consisting of nitrogen, argon, xenon, helium, and combinations thereof.
5 . The method of claim 1 , wherein the co-flowing additional gas or gases comprises gas or gases selected from the group consisting of:
(i) xenon;
(ii) xenon and hydrogen;
(iii) argon; and
(iv) argon and hydrogen.
6 . The method of claim 1 , wherein the co-flowing additional gas or gases comprises oxygen-containing gas.
7 . The method of claim 1 , wherein the co-flowing additional gas or gases comprises air or oxygen.
8 . The method of claim 1 , wherein the co-flowing gas or gases comprises COF 2 .
9 . The method of claim 1 , wherein the co-flowing gas or gases comprises CO.
10 . The method of claim 1 , wherein the co-flowing gas or gases comprises CO 2 .
11 . The method of claim 1 , wherein the co-flowing gas or gases comprises fluorine.
12 . The method of claim 1 , comprising implantation of multiple implantation species.
13 . The method of claim 1 , wherein the implanting is conducted in an ion implanter tool.
14 . The method of claim 13 , wherein the ionizing is conducted in an arc chamber of the ion implanter tool, to which the carbon-containing dopant material and co-flowing additional gas or gases are flowed.
15 . The method of claim 14 , wherein the arc chamber comprises arc chamber walls including tungsten or molybdenum.
16 . The method of claim 14 , wherein the ion implanter tool comprises a filament electrode.
17 . The method of claim 1 , comprising separating C + ions via mass analysis.
18 . The method of claim 17 , comprising implanting C + ions in the substrate.
19 . The method of claim 1 , wherein the carbon-containing dopant material and co-flowing additional gas or gases comprise a gas combination selected from the group consisting of:
(i) CO+H 2 ;
(ii) CO+CH 4 ;
(iii) CO+CH 4 +H 2 ;
(iv) CO+CH 4 +O 2 ;
(v) CO+F 2 ;
(vi) CO+F 2 +O 2 ;
(vii) CO+F 2 +H 2 ;
(viii) CO+F 2 +H 2 +O 2 ;
(ix) CO+COF 2 ;
(x) CO+COF 2 +H 2 ;
(xi) CO+CF 4 ;
(xiii) CO+CH 3 F;
(xiv) CO+H 2 +CF 4 ;
(XV) CO+H 2 +CH 3 F;
(xvi) CO+Ar;
(xvii) CO+H 2 +Ar;
(xviii) CO+Xe;
(xix) CO+Xe+H 2 ;
(xx) CF 4 +CH 4 ;
(xxi) CF 4 +CH 4 +O 2 ;
(xxii) CO 2 +H 2 ;
(xxiii) CO 2 +CH 4 ;
(xxiv) CO 2 +CH 4 +H 2 ;
(xxv) CO 2 +CH 4 +O 2 ;
(xxvi) CO 2 +F 2 ;
(xxvii) CO 2 +F 2 +O 2 ;
(xxviii) CO 2 +F 2 +H 2 ;
(xxix) CO 2 +F 2 +H 2 +O 2 ;
(XXX) CO 2 +COF 2 ;
(xxxi) CO 2 +COF 2 +H 2 ;
(xxxii) CO 2 +CF 4 ;
(xxxiii) CO 2 +CH 3 F;
(xxxiv) CO 2 +H 2 +CF 4 ;
(xxxv) CO 2 +H 2 +CH 3 F;
(xxxvi) CO 2 +Ar;
(xxxvii) CO 2 +H 2 +Ar;
(xxxviii) CO 2 +Xe; and
(xxxix) CO 2 +Xe+H 2 .
20 . A method of implanting carbon in a substrate from a carbon-containing dopant material, comprising:
co-flowing hydrogen with the carbon-containing dopant material; and
ionizing the carbon-containing dopant material to form ions comprising C + ions.
21 . The method of claim 20 , wherein the implanting is conducted in an ion implanter tool, and the ionizing is conducted in a vacuum arc chamber of the ion implanter tool.
22 . A method of implanting carbon in a substrate from a carbon-containing dopant material, comprising:
co-flowing hydrogen with the carbon-containing dopant material;
ionizing the carbon-containing dopant material to form positive carbon ions;
collimating the positive carbon ions in an ion beam; and
accelerating the positive carbon ions in the ion beam toward the substrate to implant carbon in the substrate.