IP Library › Assignment 034894/0025
Patent Assignment
Reel/Frame 034894/0025

Assignment of Assignor's Interest

Recorded: 2015-02-04 Received: 2015-02-04 Pages: 87
Assignor
Assignee
ENTEGRIS, INC.
129 CONCORD ROAD, BILLERICA, MA, 01821, UNITED STATES
Covered Properties (99)
Cobalt Precursors
Application: 62/103,068 →
Cyclopentadienyl Titanium Alkoxides with Ozone Activated Ligands for Ald of TIO2
Carbon Monoliths for Adsorption Refrigeration and Heating Applications
Dopant Precursors for Mono-Layer Doping
Ion Implanter Comprising Integrated Ventilation System
Application: 62/072,980 →
Gas Storage and Dispensing System with Monolithic Carbon Adsorbent
Application: 14/513,933 →
Recovery of Xe and Other High Value Compounds
Application: 14/506,617 →
Liquid Handling System with Electronic Information Storage
Application: 14/497,848 →
Silicon Implantation in Substrates and Provision of Silicon Precursor Compositions Therefor
Ion Implantation System and Method
Application: 14/452,192 →
Remote Delivery of Chemical Reagents
Precursor Compositions for Atomic Layer Deposition and Chemical Vapor Deposition of Titanate, Lanthanate, and Tantalate Dielectric Films
Application: 14/301,861 →
Enhanced Capacity Fluid Storage, Transport, and Dispensing Apparatus
Application: 62/007,387 →
Thermal Management of Fluid Storage and Dispensing Vessels
Application: 62/007,384 →
Enriched Silicon Precursor Compositions and Apparatus and Processes for Utilizing Same
Preparation of High Pressure BF3/H2 Mixtures
Solid Vaporizer
Application: 61/982,325 →
Antimony and Germanium Complexes Useful for Cvd/Ald of Metal Thin Films
Application: 14/251,475 →
Cobalt Cvd
Application: 61/975,994 →
Pvdf Pyrolyzate Adsorbent and Gas Storage and Dispensing System Utilizing Same
Application: 14/224,536 →
Low Temperature Deposition of Phase Change Memory Materials
Application: 14/223,500 →
Antimony Compounds Useful for Deposition of Antimony-Containing Materials
Application: 14/217,866 →
Ion Implantation Compositions, Systems, and Methods
Cobalt Precursors
Application: 61/943,494 →
CYCLOPENTADIENYL TITANIUM ALKOXIDES WITH OZONE ACTIVATED LIGANDS FOR ALD OF TiO2
Application: 61/939,211 →
Ald Processes for Low Leakage Current and Low Equivalent Oxide Thickness Bitao Films
CYCLOPENTADIENYL TITANIUM ALKOXIDES WITH OZONE ACTIVATED LIGANDS FOR ALD OF TiO2
Application: 61/919,795 →
Low Temperature Gst Process
Application: 14/104,984 →
Isotopically-Enriched Boron-Containing Compounds, and Methods of Making and Using Same
Application: 14/095,575 →
Carbon Monoliths for Adsorption Refrigeration and Heating Applications
Application: 61/910,072 →
Dopant Precursors for Mono-Layer Doping
Application: 61/909,459 →
ALD PROCESSES FOR LOW LEAKAGE CURRENT AND LOW EQUIVALENT OXIDE THICKNESS BiTaO FILMS
Application: 61/903,491 →
Double Self-Aligned Phase Change Memory Device Structure
ALD PROCESSES FOR LOW LEAKAGE CURRENT AND LOW EQUIVALENT OXIDE THICKNESS BiTaO FILMS
Application: 61/895,380 →
Fluid Storage and Dispensing System Including Dynamic Fluid Monitoring of Fluid Storage and Dispensing Vessel
Application: 14/054,497 →
Opto-Electronic Inspection Quality Assurance System for Fluid Dispensing Valves
IN-SITU OXIDIZED NiO AS ELECTRODE SURFACE FOR HIGH k MIM DEVICE
Fluorine Free Tungsten Ald/Cvd Process
Cobalt Precursors for Low Temperature Ald or Cvd of Cobalt-Based Thin Films
Component for Solar Adsorption Refrigeration System and Method of Making Such Component
Application: 14/035,834 →
Anti-Spike Pressure Management of Pressure-Regulated Fluid Storage and Delivery Vessels
Silicon Implantation in Substrates and Provision of Silicon Precursor Compositions Therefor
Application: 61/866,918 →
Rectangular Parallelepiped Fluid Storage and Dispensing Vessel
Application: 13/966,091 →
Apparatus and Process for Integrated Gas Blending
Application: 13/964,745 →
Ultra-High Purity Storage and Dispensing of Liquid Reagents
Remote Delivery of Chemical Reagents
Application: 61/857,587 →
Tellurium Compounds Useful for Deposition of Tellurium Containing Materials
Application: 13/911,622 →
Source Reagent-Based Delivery of Fluid with High Material Flux for Batch Deposition
Carbon Adsorbent for Hydrogen Sulfide Removal from Gases Containing Same, and Regeneration of Adsorbent
Silicon Precursors for Low Temperature Ald of Silicon-Based Thin-Films
Preparation of High Pressure BF3/H2 Mixtures
Application: 61/824,709 →
Strontium and Barium Precursors for Use in Chemical Vapor Deposition, Atomic Layer Deposition and Rapid Vapor Deposition
Application: 13/892,526 →
Phase Change Memory Structure Comprising Phase Change Alloy Center-Filled with Dielectric Material
Application: 13/872,087 →
Method and Apparatus to Help Promote Contact of Gas with Vaporized Material
Application: 13/862,412 →
Storage and Stabilization of Acetylene
Adsorbent Having Utility for CO2 Capture from Gas Mixtures
Application: 13/857,385 →
Ion Implantation Compositions, Systems, and Methods
Application: 61/773,135 →
Alternate Materials and Mixtures to Minimize Phosphorus Buildup in Implant Applications
Carbon Dopant Gas and Co-Flow for Implant Beam and Source Life Performance Improvement
ALD PROCESSES FOR LOW LEAKAGE CURRENT AND LOW EQUIVALENT OXIDE THICKNESS BiTaO FILMS
Application: 61/762,352 →
Boron Ion Implantation Using Alternative Fluorinated Boron Precursors, and Formation of Large Boron Hydrides for Implantation
Application: 13/726,826 →
Silicon Precursors for Low Temperature Ald of Silicon-Based Thin-Films
Application: 61/732,900 →
IN-SITU OXIDIZED NiO AS ELECTRODE SURFACE FOR HIGH k MIM DEVICE
Application: 61/732,879 →
Carbon Materials for Carbon Implantation
Application: 13/682,416 →
Double Self-Aligned Phase Change Memory Device Structure
Application: 61/720,283 →
Phase Change Memory Structure Comprising Phase Change Alloy Center-Filled with Dielectric Material
Application: 61/720,128 →
Opto-Electronic Inspection Quality Assurance System for Fluid Dispensing Valves
Application: 61/713,492 →
B2F4 Manufacturing Process
Fluorine Free Tungsten Ald/Cvd Process
Application: 61/707,656 →
Novel Cobalt Precursors for Low Temperature Ald or Cvd of Cobalt-Based Thin Films
Application: 61/705,583 →
Anti-Spike Pressure Management of Pressure-Regulated Fluid Storage and Delivery Vessels
Application: 61/704,402 →
Antimony and Germanium Complexes Useful for Cvd/Ald of Metal Thin Films
Application: 13/622,233 →
Low Temperature Deposition of Phase Change Memory Materials
Application: 13/610,928 →
Gas Storage and Dispensing System with Monolithic Carbon Adsorbent
Application: 13/601,377 →
Ultra-High Purity Storage and Dispensing of Liquid Reagents
Application: 61/681,510 →
High-K Perovskite Material and Methods of Making and Using the Same
Systems and Methods for Supplying Phosphine for Fumigation Applications
Source Reagent-Based Delivery of Fluid with High Material Flux for Batch Deposition
Application: 61/654,077 →
Carbon Adsorbent for Hydrogen Sulfide Removal from Gases Containing Same, and Regeneration of Adsorbent
Application: 61/652,348 →
Silicon Precursors for Low Temperature Ald of Silicon-Based Thin-Films
Application: 61/652,010 →
Phase Change Memory Structure Comprising Phase Change Alloy Center-Filled with Dielectric Material
Application: 61/651,106 →
Refillable Ampoule with Purge Capability
Phase Change Memory Structure Comprising Phase Change Alloy Center-Filled with Dielectric Material
Application: 61/640,043 →
Carbon Dopant Gas and Co-Flow for Implant Beam and Source Life Performance Improvement
Application: 61/625,571 →
Carbon Adsorbent and Process for Separating High-Octane Components from Low-Octane Components in a Naptha Raffinate Stream Using Such Carbon Adsorbent
Storage and Stabilization of Acetylene
Application: 61/623,727 →
Gst Deposition Process
Application: 61/619,950 →
Liquid Handling System with Electronic Information Storage
Application: 13/438,285 →
Cluster Ion Implantation of Arsenic and Phosphorus
Method and Apparatus to Help Promote Contact of Gas with Vaporized Material
Application: 13/398,814 →
Alternate Materials and Mixtures to Minimize Phosphorus Buildup in Implant Applications
Application: 61/598,704 →
Carbon Dopant Gas and Co-Flow for Implant Beam and Source Life Performance Improvement
Application: 61/598,817 →
Monosilane or Disilane Derivatives and Method for Low Temperature Deposition of Silicon-Containing Films Using the Same
Application: 13/369,810 →
Precursor Compositions for Atomic Layer Deposition and Chemical Vapor Deposition of Titanate, Lanthanate, and Tantalate Dielectric Films
Application: 13/370,072 →
Carbon Pyrolyzate Adsorbent Having Utility for CO2 Capture and Methods of Making and Using the Same
Amorphous Ge/Te Deposition Process
Application: 13/346,701 →
Pvdf Pyrolyzate Adsorbent and Gas Storage and Dispensing System Utilizing Same
Application: 13/329,254 →
Ion Implanter System Including Remote Dopant Source, and Method Comprising Same
Isotopically-Enriched Boron-Containing Compounds, and Methods of Making and Using Same
Application: 13/300,575 →