Tellurium compounds useful for deposition of tellurium containing materials
View Patent ↗Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge 2 Sb 2 Te 5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
1. A method of forming a phase change material comprising a tellurium-containing film, comprising volatilizing a tellurium precursor composition to form a tellurium precursor vapor, and contacting the tellurium precursor vapor with a substrate to deposit tellurium thereon, wherein the tellurium precursor composition comprises a tellurium precursor comprising Te 2 (t-Bu) 2 wherein t-Bu is tertiary butyl.
2. The method of claim 1 , wherein the phase change material is a GST film.
3. The method of claim 1 , wherein the contacting comprises atomic layer deposition.
4. The method of claim 1 , wherein the contacting comprises chemical vapor deposition.
5. The method of claim 1 , wherein the tellurium-containing film is an amorphous Sb 2 Te 3 film.
6. The method of claim 1 , wherein the tellurium is deposited at a temperature below 300° C.
7. A method of forming a GST film comprising volatilizing a tellurium precursor composition to form a tellurium precursor vapor, and contacting the tellurium precursor vapor with a substrate to deposit tellurium thereon, wherein the tellurium precursor composition comprises a tellurium precursor comprising Te 2 (t-Bu) 2 wherein t-Bu is tertiary butyl.
8. The method of claim 7 , wherein the contacting comprises atomic layer deposition.
9. The method of claim 7 , wherein the contacting comprises chemical vapor deposition.
10. The method of claim 7 , wherein the tellurium is deposited at a temperature below 300° C.